p p j a87p03 august 31 ,2012 - rev.00 page 1 30 v p - c hannel enhancement mode mosfet v oltage 30 v c urrent 4 a f eatures ? r ds(on) , v gs @ - 4.5 v,i d @ - 3 a< 87 m ? r ds(on) , v gs @ - 10 v,i d @ - 4.1 a < 55 m ? advanced trench process technology ? high density cell design for ultra low on - resistance ? speciall y designed for dc/dc converters ? low gate charge ? lead free in comply with eu rohs 2002/95/ec directives. ? green molding compound as per iec61249 std. (halogen free) m echanical data ? case: sot - 23 package ? terminals : solderable per mil - std - 750, method 202 6 ? apporx. weight: 0.0003 ounces, 0.0084 grams ? marking:87 m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol limit units drain - source voltage v ds - 30 v gate - source voltage v gs + 2 0 v ta=25 o c - 4 continuous drain cur rent ta=70 o c i d - 3.5 a pulsed drain current (note 1 ) i dm 20 a t a =25 o c 1.19 power dissipation (note 1 ) t a = 70 o c p d 0.75 w operating junction and storage temperature range t j ,t stg - 55 to + 150 o c thermal resistance - j unction to ambi ent (note 1 ) r ja 125 o c /w
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