gan hemt pulsed power transistor 2.7 - 3.1 ghz, 100w peak, 50 0us pulse, 10% duty cycle magx-002731-100l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. features ?? gan depletion mode hemt microwave transistor ?? common source configuration ?? broadband class ab operation ?? thermally enhanced cu/mo/cu package ?? rohs compliant ?? +50v typical operation ?? mttf of 114 years (channel temperature < 200c) application ?? civilian and military pulsed radar product description the magx-002731-100l00 is a gold metalized matched gallium nitride (gan) on silicon carbide rf power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 mhz. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today?s demanding application needs. the magx-002731-100l00 is cons tructed using a thermally enhanced cu/mo/cu flanged ceramic package which provides excellent thermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with ol der semiconductor technologies. ordering information magx-002731-100l00 100w gan power transistor MAGX-002731-SB2PPR evaluation fixture typical rf performance freq. (mhz) pin (w pout (w peak) gain (db) id-pk (a) eff (%) 2700 7 109 12 4.2 51 2900 7 112 12 4.4 51 3100 7 109 12 4.2 52 typical rf performance measured in m/a-com rf test fixture. devices tested in common source class-ab configuration as fol- lows: vdd=50v, idq=500ma (pulsed), f=2.7?3.1 ghz, pulse=500us, duty=10%.
gan hemt pulsed power transistor 2.7 - 3.1 ghz, 100w peak, 50 0us pulse, 10% duty cycle magx-002731-100l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 2 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. absolute maximum ratings table (1, 2, 3) supply voltage (vdd) +65v supply voltage (vgg) -8 to 0v supply current (id1) 7100 ma pk input power (pin) +34 dbm absolute max. junction/channel temp 200 oc pulsed power dissipation (pavg) at 85 oc 128w thermal resistance, (tchannel = 200 oc) v dd = 50v, i dq = 500ma, pout = 100w peak (300us pulse / 10% duty) 0.9 oc/w operating temp -40 to +95c storage temp -65 to +150c mounting temperature see solder reflow profile esd min. - machine model (mm) 50 v esd min. - human body model (hbm) >250 v msl level msl1 (1) operation of this device above any one of these parameters may cause permanent damage. (2) channel temperature directly affects a device's m ttf. channel temperature should be kept as low as possible to maximize lifetime. (3) for saturated performance it recommended that the sum of (3*vdd + abs(vgg)) <175 parameter test conditions symbol min typ max units dc characteristics drain-source leakage current v gs = -8v, v ds = 175v i ds - - 6 ma gate threshold voltage v ds = 5v, i d = 15.0ma v gs (th) -5 -3 -2 v forward transconductance v ds = 5v, i d = 3.5ma g m 2.5 - - s dynamic characteristics input capacitance not applicable?input internally matched c gs n/a n/a n/a pf output capacitance v ds = 50v, v gs = -8v, f = 1mhz c ds - 30.3 35.4 pf feedback capacitance v ds = 50v, v gs = -8v, f = 1mhz c gd - 2.8 5.4 pf
gan hemt pulsed power transistor 2.7 - 3.1 ghz, 100w peak, 50 0us pulse, 10% duty cycle magx-002731-100l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 3 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. electrical specifications: t c = 25 5c ( room ambient ) test fixture impedance parameter test conditions symbol min typ max units rf functional tests vdd=50v, idq=500ma (pulsed), f=2. 7?3.1 ghz, pulse=500us, duty=10% output power pin = 7w peak p out 100 10 105 10.5 - w peak w ave power gain pout = 100w peak, 10w ave g p 11.6 12.6 - db drain efficiency pin = 7w peak d 47 53 - % load mismatch stability pin = 7w peak vswr-s 5:1 - - - load mismatch tolerance pin = 7w peak vswr-t 10:1 - - - f (mhz) z if ( ? ) z of ( ? ) 2700 3.5 - j7.5 3.4 + j0.4 2900 2.7 - j5.3 4.7 - j0.8 3100 2.0 - j4.1 2.5 - j1.7
gan hemt pulsed power transistor 2.7 - 3.1 ghz, 100w peak, 50 0us pulse, 10% duty cycle magx-002731-100l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 4 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. rf power transfer curve at 50v drain bias, idq=0.5a output power vs. input power gain vs. frequency 50v drain bias, idq=0.5a return loss vs. frequency 50v drain bias, idq=0.5a 10 10.5 11 11.5 12 12.5 13 13.5 14 2600 2800 3000 3200 gain ? (db) frequency ? (mhz) 0 2 4 6 8 10 12 14 16 2600 2700 2800 2900 3000 3100 3200 rl(db) frequency ? (mhz)
gan hemt pulsed power transistor 2.7 - 3.1 ghz, 100w peak, 50 0us pulse, 10% duty cycle magx-002731-100l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 5 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. rf power transfer curve at 65v drain bias, idq=0.5a output power vs. input power gain vs. frequency 65v drain bias, idq=0.5a
gan hemt pulsed power transistor 2.7 - 3.1 ghz, 100w peak, 50 0us pulse, 10% duty cycle magx-002731-100l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 6 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. test fixture circuit dimensions test fixture assembly note: a dwg circuit drawing is available upon request
gan hemt pulsed power transistor 2.7 - 3.1 ghz, 100w peak, 50 0us pulse, 10% duty cycle magx-002731-100l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 7 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. outline drawings turning the device on 1. set v gs to the pinch-off (v p ), typically -5v 2. turn on v ds to nominal voltage (50v) 3. increase v gs until the i ds current is reached 4. apply rf power to desired level turning the device off 1. turn the rf power off 2. decrease v gs down to v p 3. decrease v ds down to 0v 4. turn off v gs correct device sequencing
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