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| jmnic product specification silicon pnp power transistors 2SB947 2SB947a description ? ? with to-220fa package ? high speed switching ? low collector saturation voltage applications ? for low-voltage switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2SB947 -40 v cbo collector-base voltage 2SB947a open emitter -50 v 2SB947 -20 v ceo collector-emitter voltage 2SB947a open base -40 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i cm collector current-peak -15 a t a =25 ?? 2 p c collector power dissipation t c =25 ?? 35 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon pnp power transistors 2SB947 2SB947a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SB947 -20 v ceo collector-emitter voltage 2SB947a i c =-10ma; i b =0 -40 v v cesat collector-emitter saturation voltage i c =-7a ;i b =-0.23a -0.6 v v besat base-emitter saturation voltage i c =-7a ;i b =-0.23a -1.5 v 2SB947 v cb =-40v; i e =0 -50 | a i cbo collector cut-off current 2SB947a v cb =-50v; i e =0 -50 | a i ebo emitter cut-off current v eb =-5v; i c =0 -50 | a h fe-1 dc current gain i c =-0.1a ; v ce =-2v 45 h fe-2 dc current gain i c =-2a ; v ce =-2v 90 260 f t transition frequency i c =-0.5a; v ce =-10v,f=10mhz 150 mhz c ob collector output capacitance f=1mhz ; v cb =-10v 200 pf t on trun-on time 0.1 | s t s storage time 0.5 | s t f fall time i c =-2a ;i b1 =-i b2 =-66ma 0.1 | s ? h fe-2 classifications q p 90-180 130-260 jmnic product specification 3 silicon pnp power transistors 2SB947 2SB947a package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) jmnic product specification 4 silicon pnp power transistors 2SB947 2SB947a jmnic product specification 5 silicon pnp power transistors 2SB947 2SB947a |
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