? 2008 ixys corporation, all rights reserved ds100000(06/08) polar tm power mosfet hiperfet tm n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c, r gs = 1m 300 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 170 a i lrms leads current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 500 a i a t c = 25 c 85 a e as t c = 25 c 5 j dv/dt i s i dm , v dd v dss ,t j 150 c 20 v/ns p d t c = 25 c 1250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 30..120/6.7..27 n/lb. weight 10 g IXFB170N30P g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 300 v v gs(th) v ds = v gs , i d = 1ma 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 1.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 18 m plus264 tm (ixfb) s g d (tab) v dss = 300v i d25 = 170a r ds(on) 18 m t rr 200 ns features ? fast intrinsic diode ? avalanche rated ? unclamped inductive switching (uis) rated ? very low r th results high power dissipation ? low r ds(on) and q g ? low package inductance advantages ? low gate charge results in simple drive requirement ? improved gate, avalanche and dynamic dv/dt ruggedness ? high power density applications ? dc-dc coverters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? ac and dc motor control ? uninterrupted power supplies ? high speed power switching applications preliminary technical information www..net
ixys reserves the right to change limits, test conditions, and dimensions. IXFB170N30P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 57 95 s c iss 20 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 2450 pf c rss 27 pf t d(on) 41 ns t r 29 ns t d(off) 79 ns t f 16 ns q g(on) 258 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 82 nc q gd 78 nc r thjc 0.10 c/ w r thcs 0.13 c /w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 170 a i sm repetitive, pulse width limited by t jm 500 a v sd i f = 85a, v gs = 0v, note 1 1.3 v t rr 200 ns q rm 1.85 c i rm 21 a note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 plus264 tm (ixfb) outline resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d =0.5 ? i d25 r g = 1 (external) i f = 85a, -di/dt = 150a/ s v r = 100v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation, all rights reserved IXFB170N30P fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ds - volts i d - amperes v gs = 10v 8v 7 v 5 v 6 v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 7 v 6 v 5 v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 01234567 v ds - volts i d - amperes v gs = 10v 8v 5 v 7v 6v fig. 4. r ds(on) normalized to i d = 85a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 170a i d = 85a fig. 5. r ds(on) normalized to i d = 85a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 50 100 150 200 250 300 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFB170N30P ixys ref: f_170n30p(9s) 06-24-08 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 q g - nanocoulombs v gs - volts v ds = 150v i d = 85a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 1,000.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms
? 2008 ixys corporation, all rights reserved IXFB170N30P ixys ref: f_170n30p(9s) 06-24-08 fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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