regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
sep. 2001 450 30 25 75 25 200 ?5 ~ +150 ?5 ~ +150 4.8 v v a a a w c c g FS25SM-9A v dss v gss i d i dm i da p d t ch t stg outline drawing dimensions in mm v gs = 0v v ds = 0v l = 200 h typical value symbol drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) maximum power dissipation channel temperature storage temperature weight to-3p mitsubishi nch power mosfet FS25SM-9A high-speed switching use application smps, ac-adapter, power supply of printer, copier, tv, vcr. etc. maximum ratings (tc = 25 c) parameter conditions ratings unit 15.9max. 4.5 1.5 f 3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 ??? 5.45 2 4 4 ? ? ? ? ? ? gate ? drain ? source ? drain 10v drive v dss ................................................................................ 450v r ds (on) (max) .............................................................. 0.16 ? i d ......................................................................................... 25a
sep. 2001 mitsubishi nch power mosfet FS25SM-9A high-speed switching use v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v a ma v ? v s pf pf pf ns ns ns ns v c/w 450 30 2.5 15.6 3.0 0.13 1.56 26.0 4600 500 100 60 100 630 140 1.5 10 1 3.5 0.16 1.92 2.0 0.625 i d = 1ma, v gs = 0v i g = 100 a, v ds = 0v v gs = 25v, v ds = 0v v ds = 450v, v gs = 0v i d = 1ma, v ds = 10v i d = 12a, v gs = 10v i d = 12a, v gs = 10v i d = 12a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 12a, v gs = 10v, r gen = r gs = 50 ? i s = 12a, v gs = 0v channel to case electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. performance curves 0 50 100 150 200 250 0 20050 100 150 10 0 7 10 1 5 7 2 3 10 2 5 7 2 3 2 3 10 1 357 2 10 2 357 7 235 2 5 2 3 t c = 25 c single pulse 100 s tw = 10 s dc 1ms 10ms 0 10 20 30 40 50 0 4 8 121620 v gs = 20v,10v,8v,6v p d = 200w t c = 25 c pulse test 5v 0 4 8 12 16 20 0246810 v gs = 20v,10v,8v t c = 25 c pulse test 5v 4v power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical)
sep. 2001 0 4 8 12 16 20 048121620 t c = 25 c pulse test i d = 40a 25a 12a 0 0.1 0.2 0.3 0.4 0.5 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 t c = 25 c pulse test v gs = 10v 20v 10 0 357 10 1 32 257 10 2 3 23 2 57 10 2 3 5 7 10 3 2 2 2 3 5 7 10 4 2 3 5 7 ciss coss tch = 25 c v gs = 0v f = 1mhz crss 0 8 16 24 32 40 0 4 8 12 16 20 t c = 25 c v ds = 10v pulse test 10 0 10 2 10 1 23 57 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 v ds = 10v pulse test t c = 25 c 75 c 125 c 10 0 10 2 10 1 23 57 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 tch = 25 c v gs = 10v v dd = 200v r gen = r gs = 50 ? t d(off) t d(on) t f t r on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) drain-source on-state resistance r ds (on) ( ? ) mitsubishi nch power mosfet FS25SM-9A high-speed switching use
sep. 2001 0 1.0 2.0 3.0 4.0 5.0 50 0 5 0 100 150 v ds = 10v i d = 1ma 0.4 0.6 0.8 1.0 1.2 1.4 50 0 5 0 100 150 v gs = 0v i d = 1ma 0 4 8 12 16 20 0 8 0 160 240 320 400 v ds = 100v 400v 200v t c h = 25 c i d = 25a 10 1 10 0 2 3 5 7 10 1 2 3 5 7 50 0 5 0 100 150 v gs = 10v i d = 12a pulse test 0 8 16 24 32 40 0 0.8 1.6 2.4 3.2 4.0 v gs = 0v pulse test t c = 125 c 75 c 25 c 10 2 10 1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 4 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 3 10 2 10 1 p dm tw d = t tw t d = 1.0 = 0.5 = 0.2 = 0.1 single pulse = 0.05 = 0.02 = 0.01 gate-source voltage vs. gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch c) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) source current i s (a) mitsubishi nch power mosfet FS25SM-9A high-speed switching use
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