tsm9933d 20v p - channel mosfet 1 / 6 version: c07 product summary v ds (v) r ds(on) (m) i d (a) 6 0 @ v gs = - 4.5v - 4.7 58 @ v gs = - 4 .5v - 2.9 78 @ v gs = - 2.7 v - 1.5 sop - 8 - 20 85 @ v gs = - 2.5v - 3.8 features advance trench process technology high density cell design for ultra l ow on - resistance application load switch pa switch ordering information part no. package packing tsm9933dcs rl sop - 8 2.5kpcs / 13 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds - 2 0 v gate - source voltage v gs 12 v continuous drain current, v gs @4.5v. i d - 4.7 a pulsed drain current, v gs @4.5v i dm - 20 a continuous source current (diode conduction) a,b i s - 2.5 a ta = 25 o c 2 maximum power dissipation ta = 70 o c p d 1.3 w operatin g junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r? jc 3 0 o c/w junction to ambient thermal resistance (pcb mou nted) r? ja 62.5 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. block diagram dual p - channel mosfet pin definition : 1. source 1 8. drain 1 2. gate 1 7. drain 1 3. source 2 6. drain 2 4. gate 2 5. drain 2
tsm9933d 20v p - channel mosfet 2 / 6 version: c07 electrical specifications parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = - 250ua bv dss - 20 -- -- v gate threshold voltage v ds = v gs , i d = - 250 a v gs(th) - 0.6 -- - 1.4 v gate body leakage v gs = 12v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = - 20v, v gs = 0v i dss -- -- - 1.0 a on - state drain current a v ds = - 5v, v gs = - 4.5v i d(on) - 15 -- -- a v gs = - 4.5v, i d = - 4.7a -- 48 60 v gs = - 4 .5v, i d = - 2.9 a -- 47 58 v gs = - 2. 7 v, i d = - 1.5a -- 60 78 drain - source on - state resistance a v gs = - 2.5v, i d = - 3.8a r ds(on) -- 65 85 m forward transconductance a v ds = - 10v, i d = - 4 .7 a g fs -- 11 -- s diode forward voltage i s = - 1.7a, v gs = 0v v sd -- - 0.8 - 1.2 v dynamic b tota l gate charge q g -- 6 9 gate - source charge q gs -- 1.4 -- gate - drain charge v ds = - 10v, i d = - 4.7a, v gs = - 4.5v q gd -- 1.9 -- nc input capacitance c iss -- 640 -- output capacitance c oss -- 180 -- reverse t ransfer capacitance v ds = - 10v, v gs = 0v, f = 1.0mhz c rss -- 90 -- pf switching c turn - on delay time t d(on) -- 22 35 turn - on rise time t r -- 35 55 turn - off delay time t d(off) -- 45 70 turn - off fall time v dd = - 10v, r l = 10 , i d = - 1a, v gen = - 4.5v, r g = 6 t f -- 25 50 ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to pr oduction testing. b. switching time is essentially independent of operating temperature.
tsm9933d 20v p - channel mosfet 3 / 6 version: c07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drai n current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm9933d 20v p - channel mosfet 4 / 6 version: c07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single pulse powe r normalized thermal transient impedance, junction - to - ambient
tsm9933d 20v p - channel mosfet 5 / 6 version: c07 sop - 8 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lo t code sop - 8 dimension millimeters inches dim min max min max. a 4.80 5.00 0.189 0.196 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27bsc 0.05bsc k 0.10 0.25 0.004 0.009 m 0 7 0 7 p 5.80 6.20 0.229 0.244 r 0.25 0.50 0.010 0.019
tsm9933d 20v p - channel mosfet 6 / 6 version: c07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information c ontained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no l iability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or ot her intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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