150v 15a 11a 20a -55 + 175c -55 + 175c 60w 2c/w v rrm repetitive peak reverse voltage i fav average forward current t c = 25c t c = 90c i fsm maximum source forward current t vj = 45 c; t p = 10ms (50hz), sine t vj virtual junction temperature t stg storage temperature range p tot t c = 25c r thjc thermal characteristics absolute maximum ratings (t c = 25c unless otherwise stated) SML11GB15U2C document number 2851 issue 2 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. mechanical data dimensions in mm (inches)
common cathode schottky diode in hermetic ceramic surface mount package for high reliability applications parameter test conditions min. typ. max. unit i r* reverse current v f* forward voltage c j capacitance t vj = 25c v r = v rrm t vj = 125c v r = v rrm i f = 5a t vj = 125c i f = 5a t vj = 25c v r = 100v t vj = 125c 1.3 1.3 0.8 0.8 1.1 22 ma v p f electrical characteristics (t a = 25c unless otherwise stated) package smd1 (to-276ab) pad 1 ? anode1 pad 2 ? cathode pad 3 ? anode 2 underside view
SML11GB15U2C document number 2851 issue 2 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. fig. 1 typ. forward charcteristics fig. 2 typ. junction capacity versus blocking voltage note: explanatory comparison for the basic operational behaviour of rectifier diodes and gallium arsenide schottky diodes. rectifier diode gaas schottky didoe conduction by majority + minority carriers by majority carriers only forward characteristics v f (i f )v f (i f ), see fig 1 turn off characteristics extraction of excess carriers reverse current charges causes temperature dependant junction capacity c j , see fig 2; reverse recovery (t rr , i rm , q rr ) not temperature dependant turn on characteristics delayed saturation leads to v fr no turn on overvoltage peak.
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