2006. 11. 8 1/2 semiconductor technical data PG03FBESC tvs diode for esd protection in portable electronics revision no : 3 protection in portable electronics applications. features 50 watts peak pulse power (tp=8/20 s) transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 5a(tp=8/20 s) bidirectional type pin configuration structure. small package for use in portable electronics. suitable replacement for multi-layer varistors in esd protection applications. protects one i/o or power line. low clamping voltage. low leakage current. applications cell phone handsets and accessories. microprocessor based equipment. personal digital assistants (pda?s) notebooks, desktops, & servers. portable instrumentation. pagers peripherals. maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 d c b a 1 2 e 1. anode 2. anode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 50 w junction temperature t j -55 150 storage temperature t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 3.3 v reverse breakdown voltage v br i t =1ma 4.2 - 6.2 v reverse leakage current i r v rwm =3.3v - - 20 a junction capacitance c j v r =0v, f=1mhz - - 80 pf marking 3b 21 21
2006. 11. 8 2/2 PG03FBESC revision no : 3 pulse duration tp ( s) 110 pp peak pulse power p (w) 100 10 100 1k peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 rated power or i (%) 0 pp 110 70 50 25 0 ambient temperature ta ( c) power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 peak pulse current i (%) 0 pp 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60 non-repetitive peak pulse power vs. pulse time
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