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1 MRF9120 MRF9120s motorola rf device data the rf mosfet line nCchannel enhancementCmode lateral mosfets designed f or broadband commercial and industrial applications with frequen- cies from 865 to 895 mhz. the high gain and broadband performance of these devices make them ideal for largeCsignal, common source amplifier applications in 26 volt base station equipment. ? typical cdma performance @ 880 mhz, 26 volts, i dq = 2 x 500 ma isC97 cdma pilot, sync, paging, traffic codes 8 through 13 output power 26 watts power gain 16 db efficiency 26% adjacent channel power 750 khz: C45 dbc @ 30 khz bw 1.98 mhz: C60 dbc @ 30 khz bw ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 880 mhz, 120 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent largeCsignal impedance parameters maximum ratings rating symbol value unit drainCsource voltage v dss 65 vdc gateCsource voltage v gs C 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c storage temperature range t stg C 65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.45 c/w note C caution C mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF9120/d semiconductor technical data case 375bC04, style 1 niC860 MRF9120 880 mhz, 120 w, 26 v lateral nCchannel rf power mosfets case 375hC03, style 1 niC860s MRF9120s ? motorola, inc. 2002 rev 4
MRF9120 MRF9120s 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss 1 adc gateCsource leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 450 madc) v gs(q) 3.8 vdc drainCsource onCvoltage (v gs = 10 vdc, i d = 1.3 adc) v ds(on) 0.17 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 4 adc) g fs 5.3 s dynamic characteristics (1) output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss 50 pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss 2 pf (1) each side of device measured separately. (continued)
3 MRF9120 MRF9120s motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) (2) twoCtone commonCsource amplifier power gain (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) g ps 15 16.5 db twoCtone drain efficiency (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) 36 39 % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) imd C31 C28 dbc input return loss (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) irl C16 C9 db twoCtone commonCsource amplifier power gain (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 895.0 mhz, f2 = 895.1 mhz) g ps 16.5 db twoCtone drain efficiency (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 895.0 mhz, f2 = 895.1 mhz) 40.5 % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 895.0 mhz, f2 = 895.1 mhz) imd C30 dbc input return loss (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 895.0 mhz, f2 = 895.1 mhz) irl C13 db power output, 1 db compression point (v dd = 26 vdc, p out = 120 w cw, i dq = 2 x 500 ma, f1 = 880.0 mhz) p 1db 120 w commonCsource amplifier power gain (v dd = 26 vdc, p out = 120 w cw, i dq = 2 x 500 ma, f1 = 880.0 mhz) g ps 16 db drain efficiency (v dd = 26 vdc, p out = 120 w cw, i dq = 2 x 500 ma, f1 = 880.0 mhz) 51 % output mismatch stress (v dd = 26 vdc, p out = 120 w cw, i dq = 2 x 500 ma, f = 880.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power (2) device measured in pushCpull configuration.
MRF9120 MRF9120s 4 motorola rf device data figure 1. 880 mhz broadband test circuit schematic z14, z15 0.040 x 0.630 microstrip z16, z17 0.040 x 0.630 microstrip z18, z19 0.330 x 0.630 microstrip z20, z21 0.450 x 0.630 microstrip z22, z23 0.750 x 0.220 microstrip z24, z25 0.115 x 0.420 microstrip z26 0.130 x 0.080 microstrip z27 0.350 x 0.080 microstrip z1 0.420 x 0.080 microstrip z2, z3 0.090 x 0.420 microstrip z4, z5 0.125 x 0.220 microstrip z6, z7 0.095 x 0.220 microstrip z8, z9 0.600 x 0.220 microstrip z10, z11 0.200 x 0.630 microstrip z12, z13 0.500 x 0.630 microstrip
5 MRF9120 MRF9120s motorola rf device data table 1. 880 mhz broadband test circuit component designations and values part description value, p/n or dwg manufacturer b1, b3, b5, b6 long ferrite beads, surface mount 95f787 newark b2, b4 short ferrite beads, surface mount 95f786 newark c1, c2 68 pf chip capacitors, b case 100b680jp500x atc c3, c6 0.8 C 8.0 pf variable capacitors 44f3360 newark c4 7.5 pf chip capacitor, b case 100b7r5jp150x atc c5 3.3 pf chip capacitor, b case 100b3r3cp150x atc c7, c8 11 pf chip capacitors, b case 100b110bca500x atc c9, c10, c21, c22 51 pf chip capacitors, b case 100b510jp500x atc c11, c12 6.2 pf chip capacitors, b case 100b6r2bca150x atc c13 4.7 pf chip capacitor, b case 100b4r7bca150x atc c14 5.1 pf chip capacitor, b case 100b5r1bca150x atc c15 3.0 pf chip capacitor, b case 100b2r7bca150x atc c16 2.7 pf chip capacitor, b case 100b3r0bca150x atc c17 0.6 C 4.5 pf variable capacitor 44f3358 newark c18, c19 47 pf chip capacitors, b case 100b470jp500x atc c20 0.4 C 2.5 pf variable capacitor 44f3367 newark c29, c30 10 f, 35 v tantalum chip capacitors 93f2975 newark c23, c24, c25, c26 22 f, 35 v tantalum chip capacitors 92f1853 newark c27, c28 220 f, 50 v electrolytic capacitors 14f185 newark balun 1, balun 2 xinger surface mount balun transformers 3a412 anaren l1, l2 12.5 nh mini spring inductors a04tC5 coilcraft r1, r2 510 ? , 1/4 w chip resistors garret wb1, wb2, wb3, wb4 10 mil brass wear blocks board material 30 mil glass teflon ? , r = 2.55 copper clad, 2 oz cu 900 mhz pushCpull rev 01b cmr pcb etched circuit board 900 mhz pushCpull rev 01b cmr figure 2. 865C895 mhz broadband test circuit component layout
MRF9120 MRF9120s 6 motorola rf device data typical characteristics figure 3. class ab broadband circuit performance figure 4. power gain versus output power figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power figure 7. power gain and efficiency versus output power
7 MRF9120 MRF9120s motorola rf device data figure 8. power gain, efficiency and imd versus output power figure 9. power gain, efficiency and acpr versus output power
MRF9120 MRF9120s 8 motorola rf device data figure 10. series equivalent input and output impedance f mhz z source ? z load ? 865 880 895 4.89 + j0.2 3.29 + j1.3 4.54 C j0.07 4.9 + j0.5 4.6 + j0.32 4.2 + j0.04 ? z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration.

9 MRF9120 MRF9120s motorola rf device data notes
MRF9120 MRF9120s 10 motorola rf device data notes
11 MRF9120 MRF9120s motorola rf device data package dimensions case 375bC04 issue e niC860 MRF9120 g l k e c ! " 4x ### h f r (lid) s (insulator) q 2x d 4x b a b (flange) a m (insulator) t n (lid) pin 5 4 case 375hC03 issue b ! e t c l d " f h ### b b (flange) r (lid) s (insulator) n (lid) m (insulator) aa (flange) k 4x niC860s MRF9120s
mrf9180 mrf9180s 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including t ypicals must be validated for each customer application by customers technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & t rademark office. all other product or service names are the property of t heir respective owners. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1C303C675C2140 or 1C800C441C2447 japan : motorola japan ltd.; sps, technical information center, 3C20C1, minamiCaz abu. minatoCku, tokyo 106C8573 japan. 8 1C3C3440C3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t., hong ko ng. 852C26668334 technical information center: 1C800C521C6274 home page : http://www .motorola.com/semiconductors/ MRF9120/d ?

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