unisonic technologies co., ltd imz88 dual transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r215-005.ca general purpose (dual transistor) ? features *both a 8550s chip and 8050s chip in a smt package ? equivalent circuits tr2 tr1 (1) (2) (3) (4) (5) (6) ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 imz88l-ag6 -r IMZ88G-AG6-R sot-26 c2 e2 c1 e1 b1 b2 tape reel (1) r: tape reel (2) ag6: sot-26 (3) g: halogen free, l: lead free imz88l -ag6 -r (1)packing type (2)package type (3)lead free ? marking
imz88 dual transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r215-005.ca ? absolute maximum ratings (t a =25c) parameter symbol rating unit tr1 tr2 collector-base voltage v cbo -30 30 v collector-emitter voltage v ceo -20 20 v emitter-base voltage v ebo -5 5 v collector current i c -700 700 ma power dissipation (note 1) p d 300 mw junction temperature t j 150 c storage temperature t stg -65~+150 c note: 1. 200mw per element must not be exceeded. 2. absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c) parameter symbol test conditions min typ max unit tr1 collector-base breakdown voltage bv cbo i c =-100 a,i e =0 -30 v collector-emitter breakdown voltage bv ceo i c = -1ma, i b =0 -20 v emitter-base breakdown voltage bv ebo i e =-100 a,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -1 a emitter cut-off current i ebo v eb = -5v, i c =0 -100 a collector-emitter satu ration voltage v ce ( sat ) i c =-500ma, i b =-50ma -0.5 v base-emitter satura tion voltage v be ( sat ) i c = 500ma, i b =-50ma -1.2 v base-emitter satura tion voltage v be v ce =-1v, i c =-10ma -1.0 v dc current transfer ratio h fe1 v ce = -1v, i c = -1ma 100 h fe2 v ce =-1v, i c =-150ma 120 110 400 h fe3 v ce =-1v, i c =-500ma 40 transition frequency f t v ce =-10v,i c =-50ma 100 mhz output capacitance c ob v cb =10v,i e =0, f=1mhz 9.0 pf tr2 collector-base breakdown voltage bv cbo i c =100 a,i e =0 30 v collector-emitter breakdown voltage bv ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage bv ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =30v 1 a emitter cut-off current i ebo v eb =5v 100 a collector-emitter satu ration voltage v ce ( sat ) i c =500ma, i b =50ma 0.5 v base-emitter satura tion voltage v be ( sat ) i c =500ma, i b =50ma 1.2 v base-emitter satura tion voltage v be v ce =1v, i c =10ma 1.0 v dc current transfer ratio h fe1 v ce =1v, i c = 1ma 100 h fe2 v ce =1v, i c =150ma 120 110 400 h fe3 v ce =1v, i c =500ma 40 transition frequency f t v ce =10v, i c =50ma 100 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 9.0 pf
imz88 dual transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r215-005.ca utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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