technische information / technical information igbt-module igbt-modules bsm100gal120dlc k h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage t vj = 25 c v ces 1200 v kollektor-dauergleichstrom t c = 80 c i c,nom. 100 a dc-collector current t c = 25 c i c 205 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 200 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 830 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 100 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 200 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 1,71 k a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 2,5 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 100a, v ge = 15v, t vj = 25c v ce sat - 2,1 2,6 v collector-emitter saturation voltage i c = 100a, v ge = 15v, t vj = 125c - 2,4 2,9 v gate-schwellenspannung gate threshold voltage i c = 4ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v gateladung gate charge v ge = -15v...+15v q g - 1,1 - c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies - 6,5 - nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 0,5 - nf kollektor-emitter reststrom collector-emitter cut-off current gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: mod-d2; mark mnzer date of publication: 2003-01-23 approved by: sm tm; wilhelm rusche revision: 3.0 5ma v ce = 1200v, v ge = 0v, t vj = 25c i ces -- 1(8) db_bsm100gal120dlc k_3.0 2003-01-23
technische information / technical information igbt-module igbt-modules bsm100gal120dlc k charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 100a, v ce = 600v turn on delay time (inductive load) v ge = 15v, r g = 5,6 ? , t vj = 25c t d,on - 0,06 - s v ge = 15v, r g = 5,6 ? , t vj = 125c - 0,06 - s anstiegszeit (induktive last) i c = 100a, v ce = 600v rise time (inductive load) v ge = 15v, r g = 5,6 ? , t vj = 25c t r - 0,05 - s v ge = 15v, r g = 5,6 ? , t vj = 125c - 0,05 - s abschaltverz?gerungszeit (ind. last) i c = 100a, v ce = 600v turn off delay time (inductive load) v ge = 15v, r g = 5,6 ? , t vj = 25c t d,off - 0,35 - s v ge = 15v, r g = 5,6 ? , t vj = 125c - 0,40 - s fallzeit (induktive last) i c = 100a, v ce = 600v fall time (inductive load) v ge = 15v, r g = 5,6 ? , t vj = 25c t f - 0,06 - s v ge = 15v, r g = 5,6 ? , t vj = 125c - 0,08 - s einschaltverlustenergie pro puls i c = 100a, v ce = 600v, v ge = 15v turn-on energy loss per pulse r g = 5,6 ? , t vj = 125c, l = 60nh e on -10-mj abschaltverlustenergie pro puls i c = 100a, v ce = 600v, v ge = 15v turn-off energy loss per pulse r g = 5,6 ? , t vj = 125c, l = 60nh e off -12-mj kurzschlu?verhalten t p 10s, v ge 15v, r g = 5,6 ? sc data t vj 125c, v cc =900v, v cemax =v ces -l ce di/dt i sc - 650 - a modulinduktivit?t stray inductance module l ce - 40 - nh modul leitungswiderstand, anschlsse ? chip module lead resistance, terminals ? chip t c =25c r cc?+ee? - 0,85 - m ? charakteristische werte / characteristic values inversdiode / free-wheel diode min. typ. max. durchla?spannung i f = 100a, v ge = 0v, t vj = 25c v f - 1,8 2,3 v forward voltage i f = 100a, v ge = 0v, t vj = 125c - 1,7 2,2 v rckstromspitze i f = 100a, - di f /dt = 2700a/s peak reverse recovery current v r = 600v, v ge = -15v, t vj = 25c i rm - 125 - a v r = 600v, v ge = -15v, t vj = 125c - 155 - a sperrverz?gerungsladung i f = 100a, - di f /dt = 2700a/s recovered charge v r = 600v, v ge = -15v, t vj = 25c q r -12-c v r = 600v, v ge = -15v, t vj = 125c -22-c abschaltenergie pro puls i f = 100a, - di f /dt = 2700a/s reverse recovery energy v r = 600v, v ge = -15v, t vj = 25c e rec -4-mj v r = 600v, v ge = -15v, t vj = 125c -9-mj chopperdiode / chopper diode min. typ. max. durchla?spannung i f = 150a, v ge = 0v, t vj = 25c v f - 1,8 2,3 v forward voltage i f = 150a, v ge = 0v, t vj = 125c - 1,7 2,2 v rckstromspitze i f = 150a, - di f /dt = 3100a/s peak reverse recovery current v r = 600v, vge = -15v, t vj = 25c i rm - 180 - a v r = 600v, vge = -15v, t vj = 125c - 220 - a sperrverz?gerungsladung i f = 150a, - di f /dt = 3100a/s recovered charge v r = 600v, vge = -15v, t vj = 25c q r -17-c v r = 600v, vge = -15v, t vj = 125c -32-c abschaltenergie pro puls i f = 150a, - di f /dt = 3100a/s reverse recovery energy v r = 600v, vge = -15v, t vj = 25c e rec -4-mj v r = 600v, vge = -15v, t vj = 125c -10-mj 2(8) db_bsm100gal120dlc k_3.0 2003-01-23
technische information / technical information igbt-module igbt-modules bsm100gal120dlc k thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor wechelr. / transistor inverter r thjc - - 0,15 k/w thermal resistance, junction to case inversdiode / free wheel diode - - 0,30 k/w chopper diode / chopper diode - - 0,25 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module ?? = 1 w/m * k / grease = 1 w/m * k r thck - 0,05 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj max - - 150 c betriebstemperatur operation temperature t vj op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation al 2 o 3 kriechstrecke creepage distance 20 mm luftstrecke clearance distance 11 mm cti comperative tracking index 275 anzugsdrehmoment f. mech. befestigung nm mounting torque anzugsdrehmoment f. elektr. anschlsse nm terminal connection torque gewicht weight g 250 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. anschlsse / terminals m5 3,0 6,0 m m 2,5 5,0 - - schraube / screw m6 3(8) db_bsm100gal120dlc k_3.0 2003-01-23
technische information / technical information igbt-module igbt-modules bsm100gal120dlc k i c [a] v ce [v] i c [a] v ce [v] 0 25 50 75 100 125 150 175 200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 25 50 75 100 125 150 175 200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 17v vge = 15v vge = 13v vge = 11v vge = 9v vge = 7v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4(8) db_bsm100gal120dlc k_3.0 2003-01-23
technische information / technical information igbt-module igbt-modules bsm100gal120dlc k i c [a] v ge [v] i f [a] v f [v] 0 25 50 75 100 125 150 175 200 56789101112 tvj = 25c tvj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 25 50 75 100 125 150 175 200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5(8) db_bsm100gal120dlc k_3.0 2003-01-23
technische information / technical information igbt-module igbt-modules bsm100gal120dlc k e [mj] i c [a] e [mj] r g [ ? ] 0 4 8 12 16 20 24 28 0 25 50 75 100 125 150 175 200 eoff eon erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) v ge =15v, r g =5,6 ? , v ce = 600v, t vj = 125c 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 eoff eon erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) v ge =15v , i c = 100a , v ce = 600v , t vj = 125c 6(8) db_bsm100gal120dlc k_3.0 2003-01-23
technische information / technical information igbt-module igbt-modules bsm100gal120dlc k z thjc [k / w] t [s] i 1234 r i [k/kw] : igbt 16,78 50,78 66,16 16,28 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge = 15v, r g = 5,6 ? , t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0 40 80 120 160 200 240 0 200 400 600 800 1000 1200 1400 ic,modul ic,chip 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 zth:diode zth:igbt 7(8) db_bsm100gal120dlc k_3.0 2003-01-23
technische information / technical information igbt-module igbt-modules bsm100gal120dlc k 8(8) db_bsm100gal120dlc k_3.0 2003-01-23
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