TLDR490. vishay semiconductors 1 (5) rev. a3, 05-oct-00 www.vishay.com document number 83002 high intensity led in 3 mm clear package color type technology angle of half intensity double hetero red TLDR490. gaalas on gaas 16 description this led contains the double heterojunction (dh) gaalas on gaas technology. this deep red led can be utilized over a wide range of drive current. it can be dc or pulse driven to achieve desired light output. the device is available in a clear 3 mm package. features exceptional brightness very high intensity even at low drive currents small viewing angle low forward voltage 3 mm (t1) untinted non-diffused package deep red color categorized for luminous intensity outstanding material efficiency 96 11676 applications bright ambient lighting conditions battery powered equipment indoor and outdoor information displays portable equipment telecommunication indicators general use absolute maximum ratings t amb = 25 c, unless otherwise specified TLDR490. parameter test conditions symbol value unit reverse voltage v r 6 v dc forward current i f 50 ma surge forward current t p 10 s i fsm 1 a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 400 k/w
TLDR490. vishay semiconductors 2 (5) rev. a3, 05-oct-00 www.vishay.com document number 83002 optical and electrical characteristics t amb = 25 c, unless otherwise specified double hetero red ( TLDR490. ) parameter test conditions type symbol min typ max unit i f =20ma TLDR4900 63 200 luminous intensity i f = 20 ma TLDR4901 i v 63 200 mcd y i f = 1 ma v 8 dominant wavelength i f = 20 ma d 648 nm peak wavelength i f = 20 ma p 650 nm spectral line half width i f = 20 ma 20 nm angle of half intensity i f = 20 ma j + 16 deg forward voltage i f = 20 ma v f 1.8 2.2 v reverse current v r = 6 v i r 10 a junction capacitance v r = 0, f = 1 mhz c j 30 pf typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 25 50 75 100 125 p power dissipation ( mw ) v t amb ambient temperature ( 5 c ) 100 95 10904 figure 1. power dissipation vs. ambient temperature 0 10 20 30 40 60 020406080 i forward current ( ma ) f t amb ambient temperature ( 5 c ) 100 95 10095 50 figure 2. forward current vs. ambient temperature
TLDR490. vishay semiconductors 3 (5) rev. a3, 05-oct-00 www.vishay.com document number 83002 0.01 0.1 1 10 1 10 100 1000 10000 t p pulse length ( ms ) 100 95 10047 i forward current ( ma ) f t p /t=0.01 0.02 0.05 0.1 0.2 1 0.5 t amb 65 c figure 3. forward current vs. pulse length 0.4 0.2 0 0.2 0.4 0.6 95 10044 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i relative luminous intensity v rel figure 4. rel. luminous intensity vs. angular displacement 1 10 100 95 10014 1 1.5 2 2.5 3 i forward current ( ma ) f v f forward voltage ( v ) dh red figure 5. forward current vs. forward voltage 0 95 10015 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) 0 0.4 0.8 1.2 1.6 2.0 dh red figure 6. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10262 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 dh red i fav =10ma, const. figure 7. rel. lumin. intensity vs. forw. current/duty cycle 0.1 1 10 0.01 0.1 1 10 100 95 10016 i relative luminous intensity v rel i f forward current ( ma ) dh red figure 8. relative luminous intensity vs. forward current
TLDR490. vishay semiconductors 4 (5) rev. a3, 05-oct-00 www.vishay.com document number 83002 600 620 640 660 680 0 0.2 0.4 0.6 0.8 1.2 700 95 10018 i relative luminous intensity v rel wavelength ( nm ) 1.0 dh red figure 9. relative luminous intensity vs. wavelength dimensions in mm 95 10952
TLDR490. vishay semiconductors 5 (5) rev. a3, 05-oct-00 www.vishay.com document number 83002 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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