note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: ft0041b doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sff6661 /39 ___ screening 2 / __ = not screened tx = tx level txv = txv level s = s level package /39 = to-39 sff6661/39 0.86 amp n-channel mosfet 90 volts, 4 ? features: ? rugged construction ? low rds(on) and high transconductance ? fast recovery and superior dv/dt performance ? increased reverse energy capability ? low input and transfer capacitance for easy paralleling ? hermetically sealed package ? very fast switching speed ? tx, txv, s-level screening available 2 / ? replacement for 2n6661 maximum ratings 3 / symbol value units drain - source voltage v ds 90 v gate - source voltage v gs 20 v max. continuous drain current ( t j = 150c ) t c = 25c t c = 100c i d 0.86 0.54 a max. instantaneous drain current (tj limited) i dm 3 a total power dissipation t c = 25c t a = 25c p d 6.25 0.725 w operating & storage temperature t op & t stg -65 to +150 c maximum thermal resistance (junction to ambient) (junction to case) r ja r jc 170 20 c /w notes: to-39 *pulse test: pulse width = 300sec, duty cycle = 2%. 1 / for ordering information, price, and availability - contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / unless otherwise specified, all electrical characteristics @25c.
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: ft0041b doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sff6661/39 electrical characteristics 3 / symbol min typ max units drain to source breakdown voltage v ds = 0v, i d = 1.0 a bv dss 90 125 ?? v gate threshold voltage v ds = v gs , i d = 1.0ma v ds = v gs , i d = 1.0ma, t a = -55c v ds = v gs , i d = 1.0ma, t a = 125c v gs(th) 0.8 ?? 0.3 1.6 1.8 1.3 2 2.5 ?? v gate to body leakage v ds = 0v, v gs = 20v v ds = 0v, v gs = 20v, t a = 125c i gss ?? ?? ?? ?? 100 500 na zero gate voltage drain current v ds = 72v, v gs = 0v v ds = 72v, v gs = 0v, t a = 125c i dss ?? ?? ?? ?? 1 100 a on-state drain current* v ds = 10v, v gs = 10v i d(on) ?? 1.8 ?? ma drain to source on state resistance* v gs = 5v, i d = 0.3a v gs = 10v, i d = 1a v gs = 10v, i d = 1a, t a =125c r ds(on) ?? ?? ?? 3.8 3.6 6.7 5.3 4 7.5 ? forward transconductance* v ds = 7.5v, i d = 0.475a g fs 170 340 ?? ms diode forward voltage i s = 0.86a, v gs = 0v v sd 0.7 0.9 1.4 v input capacitance output capacitance reverse transfer capacitance drain-source capacitance v gs = 0v v ds = 25v f = 1 mhz c iss c oss c rss c ds ?? ?? ?? ?? 35 15 2 30 50 40 10 ?? pf turn-on time turn-off time v dd = 25v, r l = 23 ? i d = 1a v gen = 10v, r g = 23 ? t (on) t ( off ) ?? ?? 6 8 10 10 nsec case outline: to-39 (/39) pin assignment (standard) package drain source gate to-39(/39) pin 3 pin 1 pin 2
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