JDV2S25SC 2005-11-07 1 toshiba diode silicon epitaxial planar type JDV2S25SC vco for uhf band radio ? high capacitance ratio : c 1v /c 4v = 2.9 (typ.) ? low series resistance : r s = 0.47 ohm (typ.) ? a two-terminal ultra-small package supports high-density mounting and the downsizing of end products. ? lead (pb)-free. maximum ratings (ta = 25c) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit reverse voltage v r i r = 1 a 10 ? ? v reverse current i r v r = 5 v ? ? 1 na c 1v v r = 1 v, f = 1 mhz 5.57 ? 5.93 capacitance c 4v v r = 4v, f = 1 mhz 1.88 ? 2.08 pf capacitance ratio c 1v /c 4v ? 2.81 ? 3 ? series resistance r s v r = 1 v, f = 470 mhz ? 0.47 0.62 ? note: signal level when capacitance is measured: v sig = 100 mvrms marking unit: mm 0.620.03 0.190.02 0.30.03 0.320.03 0.38 0.190.02 0.270.02 0.0250.0 0.0250.015 ` ` 1.anode 2.cathode jedec ? jeita ? toshiba 1-1r1a weight: 0.00017 g (typ.) ] characteristic symbol rating unit reverse voltage v r 10 v junction temperature t j 150 c storage temperature range t stg -55~150 c 2 1 sc2
JDV2S25SC 2005-11-07 2 reverse voltage v r (v) c v ? v r capacitance c v (pf) reverse voltage v r (v) r s ? v r series resistance r s ( ? ) 1 10 01234567 f=1mhz ta=25 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 f=470mhz ta=25
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