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atf-511p8 high linearity enhancement mode [1] pseudomorphic hemt in 2x2 mm 2 lpcc [3] package data sheet description avago technologiess atf-511p8 is a single-voltage high linearity, low noise e-phemt housed in an 8-lead jedec-standard leadless plastic chip carrier (lpcc [3] ) package. the device is ideal as a high linearity, low-noise, medium-power amplifier. its operating frequency range is from 50 mhz to 6 ghz. the thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. its backside metalization provides excellent thermal dissipation as well as visual evi- dence of solder reflow. the device has a point mttf of over 300 years at a mounting temperature of +85 c. all devices are 100% rf & dc tested. features ? single voltage operation ? high linearity and p1db ? low noise figure ? excellent uniformity in product specifications ? small package size: 2.0 x 2.0 x 0.75 mm ? point mttf > 300 years [2] ? msl-1 and lead-free ? tape-and-reel packaging option available specifications 2 ghz; 4.5v, 200 ma (typ.) ? 41.7 dbm output ip3 ? 30 dbm output power at 1 db gain compression ? 1.4 db noise figure ? 14.8 db gain ? 12.1 db lfom [4] ? 69% pae applications ? front-end lna q2 and q3 driver or pre-driver amplifier for cellular/pcs and wcdma wireless infrastructure ? driver amplifier for wlan, wll/rll and mmds applications ? general purpose discrete e-phemt for other high linearity applications pin connections and package marking note: package marking provides orientation and identification: 1p = device code x = date code indicates the month of manufacture. notes: 1. enhancement mode technology employs a single positive v gs , eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. refer to reliability datasheet for detailed mttf data. 3. conforms to jedec reference outline mo229 for drp-n. 4. linearity figure of merit (lfom) is essentially oip3 divided by dc bias power. pin 1 (source) pin 2 (gate) pin 3 pin 4 (source) pin 8 pin 7 (drain) pin 6 pin 5 1px top view pin 8 source (thermal/rf gnd) pin 7 (drain) pin 6 pin 5 pin 1 (source) pin 2 (gate) pin 3 pin 4 (source) bottom view
2 atf-511p8 absolute maximum ratings [1] absolute symbol parameter units maximum v ds drain C source voltage [2] v7 v gs gate C source voltage [2] v -5 to 1 v gd gate drain voltage [2] v -5 to 1 i ds drain current [2] a1 i gs gate current ma 46 p diss total power dissipation [3] w3 p in max. rf input power [4] dbm +30 t ch channel temperature c 150 t stg storage temperature c -65 to 150 ch_b thermal resistance [5] c/w 33 notes: 1. operation of this device in excess of any one of these parameters may cause permanent damage. 2. assumes dc quiescent conditions. 3. board (package belly) temperaturet b is 25 c. derate 30 mw/ c for t b > 50 c. 4. with 10 ohm series resistor in gate supply and 3:1 vswr. 5. channel-to-board thermal resistance measured using 150 c liquid crystal measurement method. 6. device can safely handle +30dbm rf input power provided i gs limited to 46ma. i gs at p 1db drive level is bias circuit dependent. product consistency distribution charts at 2 ghz, 4.5v, 200 ma [6,7] oip3 (dbm) figure 2. oip3 lsl = 38.5, nominal = 41.7. 35 41 38 44 47 240 200 160 120 80 40 0 cpk = 1.66 stdev = 0.6 -3 std +3 std p1db (dbm) figure 3. p1db lsl = 28.5, nominal = 30. 28 30 29 31 200 160 120 80 40 0 cpk = 3.24 stdev = 0.15 -3 std +3 std gain (db) figure 4. gain lsl = 13.5, nominal = 14.8, usl = 16.5. 13 15 14 16 17 150 120 90 60 30 0 cpk = 1.4 stdev = 0.31 -3 std +3 std notes: 6. distribution data sample size is 400 samples taken from 4 different wafers and 3 different lots. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. measurements are made on production test board, which represents a trade-off between optimal oip3, p1db and vswr. circuit losses have been de-embedded from actual measurements. figure 1. typical i-v curves (v gs = 0.1 per step). v ds (v) 1000 900 800 700 600 500 400 300 200 100 0 02 468 i ds (ma) 0.8 v 0.7 v 0.5 v 0.6 v pae (%) figure 5. pae lsl = 52, nominal = 68.9. 52 62 57 67 72 77 82 160 120 80 40 0 cpk = 3.03 stdev = 1.85 -3 std +3 std
3 atf-511p8 electrical specifications t a = 25 c, dc bias for rf parameters is vds = 4.5v and ids = 200 ma unless otherwise specified. symbol parameter and test condition units min. typ. max. vgs operational gate voltage vds = 4.5v, ids = 200 ma v 0.25 0.51 0.8 vth threshold voltage vds = 4.5v, ids = 32 ma v 0.28 idss saturated drain current vds = 4.5v, vgs = 0v ? ? ? notes: 1. measurements obtained using production test board described in figure 6 and pae tested at p1db condition. 2. i ) 2 ghz oip3 test condition: f1 = 2.0 ghz, f2 = 2.01 ghz and pin = -5 dbm per tone. ii ) 900 mhz oip3 test condition: f1 = 900 mhz, f2 = 910 mhz and pin = -5 dbm per tone. 3. aclr test spec is based on 3gpp ts 25.141 v5.3.1 (2002-06) - test model 1 - active channels: pccpch + sch + cpich + pich + sccpch + 64 dpch (sf=128) - freq = 2140 mhz - pin = -5 dbm - channel integrate bandwidth = 3.84 mhz 4. use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. see absolute max imum ratings and application note for more details. input 50 ohm transmission line and gate bias t (0.3 db loss) input matching circuit figure 6. block diagram of the 2 ghz production test board used for nf, gain, oip3 , p1db and pae and aclr measurements. this circuit achieves a trade-off between optimal oip3, p1db and vswr. circuit losses have been de-embedded from actual measurements.
4 gamma load and source at optimum oip3 and p1db tuning conditions the devices optimum oip3 and p1db measurements were determined using a load pull system at 4.5v, 200 ma quiesent bias: figure 7. simplified schematic of production test board. primary purpose is to show 15 ohm series resistor placement in gate supply. transmission line tapers, tee intersections, bias lines and parasitic values are not shown. rf input 1.2 pf 1.2 pf 2.7 nh 1.8 nh rf outpu t 50 ohm .02 110 ohm .03 110 ohm .03 50 ohm .02 dut 15 nh 15 ohm 2.2 f gate dc supply 47 nh 2.2 f drain dc supply optimum oip3 freq gamma source gamma load oip3 gain p1db pae (ghz) mag ang mag ang (dbm) (db) (dbm) (%) 0.9 0.776 152 0.549 -178 43.3 17.94 29.63 63.8 2.0 0.872 -171 0.683 -179 43.1 15.06 30.12 66.8 2.4 0.893 -162 0.715 -174 42.8 14.03 29.90 64.5 3.9 0.765 -132 0.574 -144 41.7 9.47 29.02 52 optimum p1db freq gamma source gamma load oip3 gain p1db pae (ghz) mag ang mag ang (dbm) (db) (dbm) (%) 0.9 0.773 153 0.784 -173 38.0 19.28 31.9 54.23 2.0 0.691 147 0.841 -166 36.4 10.34 31.4 38.15 2.4 0.797 164 0.827 -166 36.2 8.43 31.2 37.38 3.9 0.602 -163 0.794 -155 35.4 7.03 31 32.72
5 atf-511p8 typical performance curves (at 25 c unless specified otherwise) tuned for optimal oip3 at 4.5v 200 ma note: bias current for the above charts are quiescent conditions. actual level may increase or decrease depending on amount of rf drive. i ds (ma) figure 8. oip3 vs. i ds and v ds at 2 ghz. oip3 (dbm) 50 50 45 40 35 30 25 20 15 10 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 9. oip3 vs. i ds and v ds at 900 mhz. oip3 (dbm) 50 50 45 40 35 30 25 20 15 10 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 10. p1db vs. i ds and v ds at 2 ghz. p1db (dbm) 50 35 30 25 20 15 10 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 11. p1db vs. i ds and v ds at 900 mhz. p1db (dbm) 50 35 30 25 20 15 10 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 12. gain vs. i ds and v ds at 2 ghz. gain (db) 50 17 16 15 14 13 12 11 10 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 13. gain vs. i ds and v ds at 900 mhz. gain (db) 50 20 19 18 17 16 15 14 13 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 14. pae vs. i ds and v ds at 2 ghz. pae (%) 50 80 70 60 50 40 30 20 10 0 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 15. pae vs. i ds and v ds at 900 mhz. pae (%) 50 80 70 60 50 40 30 20 10 0 550 150 350 450 250 4.5 v 4 v 3 v frequency (ghz) figure 16. oip3 vs. temp and freq. oip3 (dbm) 0.5 50 45 40 35 30 25 20 4 1 2 2.5 1.5 3 3.5 -40 c 25 c 85 c
6 atf-511p8 typical performance curves , continued (at 25 c unless specified otherwise) tuned for optimal oip3 at 4.5v, 200 ma note: bias current for the above charts are quiescent conditions. actual level may increase or decrease depending on amount of rf drive. frequency (ghz) figure 17. p1db vs. temp and freq. p1db (dbm) 0.5 35 30 25 20 15 10 4 1 2 2.5 1.5 3 3.5 frequency (ghz) figure 18. gain vs. temp and freq. gain (db) 0.5 20 15 10 5 0 4 1 2 2.5 1.5 3 3.5 frequency (ghz) figure 19. pae vs. temp and freq. pae (%) 0.5 80 70 60 50 40 30 20 10 0 4 1 2 2.5 1.5 3 3.5 -40 c 25 c 85 c -40 c 25 c 85 c -40 c 25 c 85 c i ds (ma) figure 20. oip3 vs. i ds and v ds at 2 ghz. oip3 (dbm) 50 50 45 40 35 30 25 20 15 10 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 21. oip3 vs. i ds and v ds at 900 mhz. oip3 (dbm) 50 50 45 40 35 30 25 20 15 10 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 22. p1db vs. i ds and v ds at 2 ghz. p1db (dbm) 50 35 30 25 20 15 10 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 23. p1db vs. i ds and v ds at 900 mhz. p1db (dbm) 50 35 30 25 20 15 10 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 24. gain vs. i ds and v ds at 2 ghz. gain (db) 50 12 10 8 6 4 2 0 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 25. gain vs. i ds and v ds at 900 mhz. gain (db) 50 22 20 18 16 14 12 10 550 150 350 450 250 4.5 v 4 v 3 v atf-511p8 typical performance curves (at 25 c unless specified otherwise) tuned for optimal p1db at 4.5 v, 200 ma
7 atf-511p8 typical performance curves, continued (at 25 c unless specified otherwise) tuned for optimal p1db at 4.5v, 200 ma note: bias current for the above charts are quiescent conditions. actual level may increase or decrease depending on amount of rf drive. i ds (ma) figure 26. pae vs. i ds and v ds at 2 ghz. pae (%) 50 50 40 30 20 10 0 550 150 350 450 250 4.5 v 4 v 3 v i ds (ma) figure 27. pae vs. i ds and v ds at 900 mhz. pae (%) 50 70 60 50 40 30 20 10 550 150 350 450 250 4.5 v 4 v 3 v frequency (ghz) figure 28. oip3 vs. temp and freq. oip3 (dbm) 0.5 45 40 35 30 25 20 4 1 2 2.5 1.5 3 3.5 frequency (ghz) figure 29. p1db vs. temp and freq. p1db (dbm) 0.5 40 35 30 25 20 15 10 4 1 2 2.5 1.5 3 3.5 frequency (ghz) figure 30. gain vs. temp and freq. gain (db) 0.5 20 15 10 5 0 4 1 2 2.5 1.5 3 3.5 frequency (ghz) figure 31. pae vs. temp and freq. pae (%) 0.5 70 60 50 40 30 20 10 0 4 1 2 2.5 1.5 3 3.5 -40 c 25 c 85 c -40 c 25 c 85 c -40 c 25 c 85 c -40 c 25 c 85 c
8 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. figure 32. msg/mag & |s21| 2 (db) @ 4.5v, 300 ma. frequency (ghz) 40 30 20 10 0 -10 -20 0 5 10 15 20 msg/mag & |s21| 2 (db) s21 mag msg atf-511p8 typical scattering parameters, v ds = 4.5v, i ds = 300 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.1 0.94 -134.9 31.16 36.15 111.2 -38.53 0.01 29.7 0.73 -164.5 34.79 0.2 0.93 -157.7 25.64 19.14 99.2 -37.87 0.01 21.8 0.76 -173.7 31.68 0.3 0.93 -166.6 22.26 12.97 94.2 -37.61 0.01 21.1 0.78 -176.8 29.99 0.4 0.93 -171.8 19.78 9.74 90.9 -37.09 0.01 23.4 0.78 -179.9 28.43 0.5 0.92 -173.9 18.70 8.60 88.9 -36.15 0.01 25.4 0.75 178.9 27.31 0.6 0.93 -176.9 17.12 7.18 86.1 -35.80 0.01 27.0 0.75 176.9 26.52 0.7 0.92 -178.8 15.78 6.15 84.3 -35.41 0.01 29.5 0.75 175.5 25.59 0.8 0.93 178.7 14.61 5.37 82.3 -35.11 0.01 32.5 0.76 174.0 24.75 0.9 0.92 177.1 13.58 4.77 80.6 -35.00 0.01 33.1 0.75 172.8 24.24 1 0.93 175.7 12.64 4.28 79.1 -34.46 0.01 35.0 0.76 171.6 23.53 1.5 0.93 168.7 8.99 2.81 71.4 -32.70 0.02 40.0 0.76 166.0 20.88 2 0.93 163.0 6.36 2.08 64.2 -31.27 0.02 42.3 0.76 160.6 17.20 2.5 0.92 157.8 4.40 1.66 57.2 -29.90 0.03 42.5 0.76 155.5 14.71 3 0.92 152.5 2.73 1.36 50.4 -28.59 0.03 41.6 0.75 149.7 12.65 4 0.92 142.8 0.03 1.00 37.6 -26.69 0.04 35.7 0.74 138.6 9.96 5 0.91 133.2 -2.17 0.77 24.2 -25.30 0.05 29.8 0.71 127.2 7.23 6 0.91 124.6 -4.21 0.61 14.1 -24.32 0.06 23.7 0.65 117.2 4.97 7 0.91 115.7 -5.80 0.51 5.6 -23.48 0.06 19.5 0.59 111.3 3.02 8 0.91 106.0 -6.82 0.45 -2.6 -22.49 0.07 14.1 0.56 108.2 1.86 9 0.91 95.5 -7.36 0.42 -10.2 -21.39 0.08 8.5 0.58 103.7 1.19 10 0.90 85.2 -7.98 0.40 -22.2 -20.50 0.09 0.4 0.60 96.0 0.53 11 0.89 74.3 -8.69 0.38 -29.1 -19.72 0.10 -8.4 0.63 87.2 -0.04 12 0.89 63.0 -9.25 0.35 -40.1 -19.42 0.10 -17.1 0.65 77.6 -0.61 13 0.89 54.1 -9.80 0.32 -51.7 -19.12 0.11 -23.9 0.67 68.2 -1.04 14 0.90 46.3 -10.25 0.31 -55.2 -18.65 0.11 -29.7 0.69 58.7 -1.13 15 0.90 40.6 -10.86 0.30 -57.3 -18.57 0.11 -35.8 0.69 50.1 -1.88 16 0.89 33.3 -11.16 0.32 -71.1 -18.02 0.12 -42.3 0.71 41.8 -2.26 17 0.83 25.4 -11.81 0.24 -75.3 -17.65 0.13 -47.1 0.73 35.1 -3.17 18 0.86 20.0 -12.07 0.24 -90.5 -17.43 0.13 -53.1 0.76 27.7 -3.76
9 figure 33. msg/mag & |s21| 2 (db) @ 4.5v, 200 ma. frequency (ghz) 40 30 20 10 0 -10 -20 0 5 10 15 20 msg/mag & |s21| 2 (db) s21 mag msg atf-511p8 typical scattering parameters, v ds = 4.5v, i ds = 200 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.1 0.94 -132.6 31.26 36.54 112.1 -37.40 0.01 27.2 0.70 -161.0 34.49 0.2 0.93 -156.3 25.79 19.47 99.6 -36.68 0.01 19.2 0.74 -171.6 31.13 0.3 0.94 -165.6 22.40 13.18 94.4 -36.47 0.01 19.9 0.76 -175.6 29.44 0.4 0.93 -170.8 19.93 9.92 91.1 -36.17 0.01 19.9 0.76 -178.8 27.93 0.5 0.92 -173.1 18.84 8.75 89.0 -35.11 0.01 24.6 0.73 179.9 26.87 0.6 0.92 -176.2 17.26 7.29 86.2 -34.84 0.01 23.9 0.73 177.8 26.08 0.7 0.92 -178.2 15.92 6.25 84.3 -34.72 0.01 25.6 0.73 176.2 25.41 0.8 0.92 179.4 14.76 5.47 82.3 -34.37 0.01 27.6 0.74 174.7 24.59 0.9 0.93 177.4 13.72 4.85 80.4 -34.02 0.02 28.6 0.74 173.4 23.85 1 0.92 176.0 12.77 4.34 79.1 -33.71 0.02 30.8 0.74 172.2 23.16 1.5 0.93 168.9 9.13 2.86 70.9 -32.20 0.02 35.0 0.74 166.5 20.59 2 0.93 163.6 6.49 2.11 63.7 -30.97 0.02 38.2 0.74 161.1 17.50 2.5 0.92 157.9 4.50 1.67 56.8 -29.65 0.03 39.1 0.74 155.9 14.78 3 0.93 152.6 2.81 1.38 49.3 -28.54 0.03 38.1 0.74 150.2 13.16 4 0.91 143.1 0.16 1.01 35.8 -26.68 0.04 33.9 0.73 139.0 9.84 5 0.91 133.7 -2.08 0.78 22.7 -25.40 0.05 28.0 0.70 127.4 7.34 6 0.91 124.7 -4.02 0.62 12.0 -24.42 0.06 22.3 0.65 117.0 5.01 7 0.90 115.7 -5.75 0.51 3.3 -23.61 0.06 18.2 0.58 110.2 2.77 8 0.90 105.6 -6.77 0.45 -3.9 -22.73 0.07 14.4 0.54 107.5 1.56 9 0.91 95.7 -7.45 0.42 -12.1 -21.60 0.08 8.4 0.55 103.9 1.13 10 0.91 84.9 -7.95 0.40 -22.4 -20.76 0.09 0.9 0.58 97.0 0.82 11 0.89 74.0 -8.29 0.38 -32.0 -19.93 0.10 -8.6 0.61 88.4 -0.05 12 0.89 63.1 -9.19 0.34 -39.5 -19.45 0.10 -16.8 0.64 78.9 -0.82 13 0.89 54.0 -9.74 0.326 -51.1 -19.03 0.11 -24.1 0.67 69.1 -1.38 14 0.90 46.4 -10.17 0.31 -58.1 -18.78 0.11 -30.7 0.68 59.6 -1.33 15 0.90 38.8 -10.85 0.28 -67.8 -18.47 0.11 -36.1 0.68 50.9 -1.80 16 0.91 33.1 -10.77 0.28 -73.7 -18.19 0.12 -42.9 0.71 42.0 -2.11 17 0.85 26.8 -11.05 0.28 -83.3 -17.88 0.12 -47.5 0.73 35.3 -2.60 18 0.87 19.3 -11.53 0.26 -100.4 -17.54 0.13 -53.8 0.75 27.3 -2.83 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead.
10 figure 34. msg/mag & |s21| 2 (db) @ 4.5v, 100 ma. frequency (ghz) 40 30 20 10 0 -10 -20 0 5 10 15 20 msg/mag & |s21| 2 (db) s21 mag msg atf-511p8 typical scattering parameters, v ds = 4.5v, i ds = 100 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.1 0.93 -125.4 30.99 35.43 115.3 -34.72 0.01 28.6 0.65 -151.1 32.94 0.2 0.93 -152.1 25.70 19.27 101.4 -33.88 0.02 18.9 0.70 -166.3 29.84 0.3 0.93 -162.8 22.34 13.09 95.5 -33.70 0.02 15.5 0.72 -172.2 27.95 0.4 0.92 -168.7 19.90 9.88 91.8 -33.49 0.02 16.5 0.72 -176.0 26.73 0.5 0.91 -170.8 18.78 8.68 89.5 -32.50 0.02 17.7 0.69 -177.2 25.59 0.6 0.91 -174.4 17.21 7.25 86.6 -32.42 0.02 17.6 0.7 -179.7 24.80 0.7 0.92 -176.8 15.88 6.22 84.4 -32.20 0.02 19.1 0.7 178.3 23.96 0.8 0.92 -179.0 14.72 5.44 82.3 -32.13 0.02 18.8 0.70 176.6 23.38 0.9 0.92 178.7 13.69 4.83 80.4 -32.02 0.02 18.9 0.70 175.2 22.86 1 0.91 177.0 12.73 4.33 78.8 -31.85 0.02 20.6 0.70 173.8 22.22 1.5 0.92 169.8 9.11 2.85 70.2 -30.95 0.02 24.8 0.70 167.8 20.08 2 0.91 163.9 6.49 2.11 62.8 -30.00 0.03 27.8 0.71 162.3 18.19 2.5 0.91 158.8 4.52 1.68 55.2 -29.22 0.03 29.0 0.71 157.2 14.84 3 0.91 153.0 2.89 1.39 47.7 -28.39 0.03 29.0 0.71 151.6 12.76 4 0.91 143.7 0.20 1.02 33.1 -26.77 0.04 27.2 0.70 140.4 9.92 5 0.91 134.0 -2.08 0.78 19.2 -25.62 0.05 22.2 0.68 128.7 7.42 6 0.90 125.0 -4.20 0.61 7.3 -24.73 0.05 17.3 0.64 117.4 4.79 7 0.90 115.7 -6.04 0.49 -1.6 -23.99 0.06 14.3 0.56 109.1 2.45 8 0.90 106.4 -7.35 0.42 -7.7 -23.23 0.06 11.2 0.51 106.4 0.71 9 0.90 96.5 -8.14 0.39 -16.4 -22.04 0.07 7.2 0.51 105.0 0.01 10 0.9 86.1 -8.45 0.37 -25.3 -20.89 0.09 0.5 0.54 99.3 -0.37 11 0.89 75.4 -9.46 0.33 -35.2 -20.08 0.09 -7.5 0.58 90.9 -1.33 12 0.90 63.8 -9.59 0.33 -46.1 -19.41 0.10 -16.7 0.62 81.3 -1.60 13 0.89 54.7 -10.42 0.30 -52.9 -19.02 0.11 -25.1 0.65 71.3 -1.93 14 0.90 46.5 -10.99 0.28 -59.8 -18.87 0.11 -31.7 0.67 61.4 -2.12 15 0.88 40.2 -11.15 0.27 -70.6 -18.71 0.11 -38.2 0.68 52.4 -2.66 16 0.90 33.5 -11.50 0.26 -71.7 -18.22 0.12 -45.5 0.70 43.3 -2.83 17 0.86 26.4 -11.50 0.26 -80.8 -18.28 0.12 -49.0 0.72 35.9 -3.33 18 0.86 19.3 -11.51 0.26 -92.6 -17.88 0.12 -54.8 0.74 27.9 -3.69 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead.
11 figure 35. msg/mag & |s21| 2 (db) @ 4v, 200 ma. frequency (ghz) 40 30 20 10 0 -10 -20 0 5 10 15 20 msg/mag & |s21| 2 (db) s21 mag msg atf-511p8 typical scattering parameters, v ds = 4v, i ds = 200 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.1 0.94 -133.7 30.85 34.87 111.4 -37.28 0.01 28.2 0.73 -162.5 33.96 0.2 0.93 -156.9 25.31 18.41 99.5 -36.61 0.01 20.4 0.76 -172.6 30.89 0.3 0.93 -165.9 21.89 12.43 94.2 -36.19 0.01 20.2 0.78 -176.3 28.90 0.4 0.94 -170.9 19.48 9.42 90.9 -35.98 0.01 20.4 0.78 -179.5 27.70 0.5 0.93 -174.5 17.53 7.52 88.8 -35.84 0.01 23.0 0.78 178.5 26.73 0.6 0.93 -175.8 16.77 6.89 86.0 -34.69 0.01 23.5 0.76 177.3 25.83 0.7 0.93 -178.2 15.53 5.97 84.2 -34.42 0.01 25.0 0.75 175.5 24.98 0.8 0.92 179.7 14.28 5.17 82.5 -34.11 0.02 27.1 0.76 173.9 24.13 0.9 0.92 178.0 13.21 4.57 80.5 -33.77 0.02 29.2 0.76 172.5 23.60 1 0.93 176.3 12.34 4.13 78.6 -33.66 0.02 29.6 0.76 171.4 22.95 1.5 0.92 169.6 8.63 2.70 71.0 -32.21 0.02 34.5 0.76 165.3 20.34 2 0.93 164.4 6.12 2.02 63.5 -30.69 0.02 38.0 0.76 159.2 17.32 2.5 0.92 159.6 4.07 1.59 57.0 -29.46 0.03 39.4 0.76 154.1 14.52 3 0.92 154.2 2.30 1.30 50.3 -28.47 0.03 37.7 0.75 148.6 12.34 4 0.92 144.9 -0.31 0.96 37.4 -26.48 0.04 33.8 0.73 137.1 9.75 5 0.91 135.5 -2.55 0.74 25.4 -25.14 0.05 28.4 0.69 127.3 6.74 6 0.92 126.6 -4.30 0.60 15.1 -24.15 0.06 23.4 0.64 119.4 5.17 7 0.91 117.1 -5.64 0.52 6.50 -23.20 0.06 18.3 0.62 114.5 3.27 8 0.91 108.2 -6.81 0.45 -2.8 -22.06 0.07 12.3 0.62 108.5 2.03 9 0.90 99.1 -7.13 0.44 -13.7 -21.10 0.08 5.2 0.62 100.8 1.60 10 0.92 89.2 -7.76 0.40 -21.2 -20.40 0.09 -2.7 0.64 90.4 1.40 11 0.90 79.6 -8.39 0.38 -30.0 -19.67 0.10 -11.0 0.65 79.3 0.26 12 0.91 70.9 -8.92 0.35 -42.9 -19.28 0.10 -19.9 0.66 67.0 0.15 13 0.90 62.2 -9.42 0.33 -48.9 -19.11 0.11 -27.2 0.67 57.1 -0.69 14 0.94 53.8 -9.84 0.32 -60.1 -18.86 0.11 -33.1 0.68 48.7 -1.20 15 0.87 45.0 -10.51 0.29 -68.5 -18.58 0.11 -38.4 0.7 40.0 -1.56 16 0.89 37.7 -10.74 0.29 -72.4 -18.59 0.11 -43.7 0.71 36.3 -1.97 17 0.89 30.5 -10.03 0.31 -85.1 -17.88 0.12 -48.3 0.73 28.8 -2.50 18 0.88 25.4 -11.77 0.25 -91.8 -17.72 0.13 -59.0 0.74 19.5 -2.82 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead.
12 atf-511p8 typical scattering parameters, v ds = 3v, i ds = 200 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db 0.1 0.95 -137.1 29.51 29.89 109.9 -36.88 0.01 25.2 0.78 -166.0 33.29 0.2 0.94 -159.0 23.89 15.65 98.7 -36.27 0.01 19.8 0.81 -174.5 30.18 0.3 0.94 -167.3 20.46 10.54 93.8 -36.20 0.01 18.0 0.82 -177.6 28.47 0.4 0.94 -172.0 18.04 7.98 90.7 -35.82 0.01 20.5 0.83 179.4 26.98 0.5 0.93 -175.3 16.10 6.38 88.7 -35.59 0.01 22.4 0.83 177.6 25.75 0.6 0.93 -176.8 15.36 5.86 85.9 -34.34 0.01 24.0 0.81 176.3 24.89 0.7 0.93 -178.7 14.14 5.09 84.2 -34.27 0.01 24.8 0.81 174.6 24.28 0.8 0.93 179.1 12.87 4.4 82.6 -34.12 0.02 27.1 0.81 173.1 23.42 0.9 0.93 177.3 11.82 3.89 80.6 -33.66 0.02 29.1 0.81 171.7 22.69 1 0.93 176.1 10.91 3.51 78.9 -33.55 0.02 29.3 0.81 170.7 22.23 1.5 0.93 169.4 7.24 2.30 71.8 -31.97 0.02 35.4 0.81 164.6 19.64 2 0.93 164.0 4.75 1.72 64.7 -30.60 0.03 38.5 0.81 158.5 16.34 2.5 0.93 159.1 2.73 1.36 58.5 -29.39 0.03 38.5 0.81 153.4 14.08 3 0.92 154.0 0.93 1.11 51.6 -28.15 0.03 37.4 0.80 147.6 11.72 4 0.93 144.8 -1.58 0.83 38.7 -26.26 0.04 33.1 0.78 135.8 9.24 5 0.92 135.2 -3.78 0.64 27.3 -24.91 0.05 27.7 0.74 125.0 6.28 6 0.93 126.0 -5.54 0.52 17.2 -24.05 0.06 22.1 0.68 115.6 4.39 7 0.91 116.6 -7.07 0.44 10.5 -23.11 0.07 17.2 0.63 110.7 1.96 8 0.91 107.4 -7.66 0.41 2.06 -22.08 0.07 12.1 0.62 106.3 1.32 9 0.90 98.4 -8.06 0.39 -5.6 -21.04 0.08 5.0 0.63 99.5 0.60 10 0.92 89.0 -8.99 0.35 -15.9 -20.23 0.09 -2.7 0.64 89.8 0.49 11 0.92 79.5 -9.12 0.35 -25.8 -19.45 0.10 -12.4 0.66 78.7 0.19 12 0.91 70.1 -9.28 0.34 -35.9 -19.08 0.11 -21.4 0.68 66.3 -0.19 13 0.91 61.9 -9.71 0.32 -39.9 -18.93 0.11 -29.2 0.69 56.4 -0.68 14 0.92 51.8 -10.04 0.31 -54.7 -18.89 0.11 -35.6 0.70 47.9 -0.40 15 0.88 44.1 -10.01 0.31 -59.8 -18.63 0.11 -40.7 0.72 39.0 -1.57 16 0.87 36.4 -10.16 0.31 -77.5 -18.83 0.11 -44.7 0.73 35.3 -1.85 17 0.83 30.1 -10.61 0.31 -87.2 -18.17 0.12 -51.2 0.74 27.7 -2.42 18 0.85 24.0 -11.96 0.25 -97.4 -17.69 0.13 -58.3 0.75 18.3 -3.71 figure 36. msg/mag & |s21| 2 (db) @ 3v, 200 ma. frequency (ghz) 40 30 20 10 0 -10 -20 0 5 10 15 20 msg/mag & |s21| 2 (db) s21 mag msg notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead.
13 2 x 2 lpcc (jedec dfp-n) package dimensions ordering information part number no. of devices container atf-511p8-tr1 3000 7 reel atf-511p8-tr2 10000 13 reel ATF-511P8-BLK 100 antistatic bag device models refer to avagos web site www.avago tech .com/view/rf d e 8 7 6 5 a d1 e1 p e pin1 r l b dimensions are in millimeters dimensions min. 0.70 0 0.203 ref 0.225 1.9 0.65 1.9 1.45 0.50 bsc 0.20 0.35 nom. 0.75 0.02 0.203 ref 0.25 2.0 0.80 2.0 1.6 0.50 bsc 0.25 0.40 max. 0.80 0.05 0.203 ref 0.275 2.1 0.95 2.1 1.75 0.50 bsc 0.30 0.45 symbol a a1 a2 b d d1 e e1 e p l 1 pin1 2 3 4 1px top view end view side view bottom view a2 a a1
14 device orientation pcb land pattern and stencil design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) 0.25 (9.84) 0.50 (19.68) 0.28 (10.83) 0.60 (23.62) 0.20 (7.87) pin 1 solder mask rf transmission line 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) 1.60 (62.99) + 2.72 (107.09) 0.63 (24.80) 0.22 (8.86) 0.32 (12.79) 0.50 (19.68) 0.25 (9.74) 0.63 (24.80) stencil layout (top view) pcb land pattern (top view) notes: typical stencil thickness is 5 mils. measurements are in millimeters (mils). 0.72 (28.35) pin 1 1.54 (60.61) user feed direction cover tape carrier tape reel 8 mm 4 mm 1px 1px 1px 1px
15 tape dimensions p 0 p f w d 1 e p 2 a 0 10 max t 1 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.30 0.05 2.30 0.05 1.00 0.05 4.00 0.10 1.00 + 0.25 0.091 0.004 0.091 0.004 0.039 0.002 0.157 0.004 0.039 + 0.002 cavity diameter pitch position d p 0 e 1.50 0.10 4.00 0.10 1.75 0.10 0.060 0.004 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 + 0.30 0.254 0.02 0.315 0.012 8.00 C C
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countrie s. data subject to change. copyright ? 2007 avago technologies, limited. all rights reserved. obsoletes 5988-8246en 5989-0003en - july 10, 2007

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