unisonic technologies co., ltd 2sc5027e npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r203-030.c high voltage and high reliability transistor . ? features * high speed switching * wide soa ? ordering information order number package pin assignment packing lead free halogen free 1 2 3 2sc5027el-x-ta3-t 2sc5027el-x-ta3-t to-220 b c e tube 2SC5027EL-X-TF2-T 2SC5027EL-X-TF2-T to-220f2 b c e tube 2sc5027el-x-tf3-t 2sc5027el-x-tf3-t to-220f b c e tube
2sc5027e npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-030.c ? absoluate maxium ratings (t c = 25 ) parameter symbol ratings unit collector-base voltage v cbo 750 v collector-emitter voltage v ceo 700 v collector-emitter voltage v ebo 7 v peak collector current i c 3 a collector current (pulse) i cp 10 a base current i b 1.5 a power dissipation to-220/to-220f p d 50 w to-220f2 52 junction temperature t j 150 storage temperature t stg -40 ~ +150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t c = 25 , unless otherwise specified.) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =1ma, i e =0 750 v collector-emitter breakdown voltage bv ceo i c =5ma, i b =0 700 v emitter-base breakdown voltage bv ebo i e =1ma, i c =0 7 v collector-emitter sustaining voltage v ceo(sus) i c =1.5a, i b1 = -i b2 =0.3a l=2mh, clamped 700 v collector cut-off current i cbo v cb =750v, i e =0 10 a emitter cut-off current i ebo v eb =5v, i c =0 10 a dc current gain h fe1 v ce =5v, i c =0.2a 10 40 h fe 2 v ce =5v, i c =1a 8 collector-emitter satu ration voltage v ce ( sat ) i c =1.5a, i b =0.3a 2 v base-emitter satura tion voltage v be ( sat ) i c =1.5a, i b =0.3a 1.5 v output capacitance c ob v cb =10v, f=1mhz, i e =0 60 pf current gain bandwidth product f t v ce =10v, i c =0.2a 15 mhz turn on time t on v cc =400v i c =5i b1 = -2.5i b2 =2a r l =200 ? 0.5 s storage time t s 3 s fall time t f 0.3 s ? classification of h fe1 classification n r o range 10 ~ 20 15 ~ 30 20 ~ 40
2sc5027e npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-030.c typical characteristics dc current gain, h fe c o l l e c t o r c u r r e n t , i c ( a ) collector current, ic (a) s a t u r a t i o n v o l t a g e , v b e ( s a t ) , v c e ( s a t ) ( v ) 10 m s t i m e , t o n , t s t g , t f ( s ) collector current, ic (a) 1 0 0 s d c 1 m s
2sc5027e npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-030.c ? typical characteristics(cont.) 1ms 100us 1 100 10 10 100 1000 10000 0. 1 0.0 1 80 70 20 10 0 25 50 75 100 125 150 60 50 40 30 0 175 collector current, ic (a) collector-emitter voltage, v ce (v) power derating case temperature, t c ( ) power dissipation, p d (w) reverse operating area i b2 =-0.3a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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