march 1994 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp30xxf3 (lv) overvoltage protector series tisp3072f3,tisp3082f3 low-voltage dual bidirectional thyristor overvoltage protectors device symbol sl package (top view) p package (top view) ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge planar passivated junctions low off-state current <10 a rated for international surge wave shapes these low-voltage dual bidirectional thyristor protectors are designed to protect isdn applications against transients caused by lightning strikes and a.c. power lines. offered in two voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. the high crowbar holding current prevents d.c. latchup as the current subsides. these monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. how to order d package (top view) description .............................................. ul recognized component device v drm v v (bo) v 3072f3 58 72 3082f3 66 82 waveshape standard i tsp a 2/10 s gr-1089-core 80 8/20 s iec 61000-4-5 70 10/160 s fcc part 68 60 10/700 s itu-t k.20/21 fcc part 68 50 10/560 s fcc part 68 45 10/1000 s gr-1089-core 35 1 2 3 45 6 7 8 g g g g nc t r nc nc - no internal connection r g t g t g g r 1 2 3 45 6 7 8 specified t terminal ratings require connection of pins 1 and 8. specified r terminal ratings require connection of pins 4 and 5. md1xab 1 2 3 t g r g tr sd3xaa terminals t, r and g correspond to the alternative line designators of a, b and c *rohs directive 2002/95/ec jan 27 2003 including annex device package carrier tisp30xxf3 d, small-outline tape and reeled tisp30xxf3dr p, plastic dip tube tisp30xxf3p sl, single-in-line tube tisp30xxf3sl tisp30xxf3dr-s tisp30xxf3p-s tisp30xxf3sl-s insert xx value corresponding to protection voltages of 72 and 82 for standard termination finish order as for lead free termination finish order as *r o h s c o m p l ia n t v e r s io n s a v a il a b l e
march 1994 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. rating symbol value unit re petitive peak off-state voltage, 0 c < t a < 70 c 3072f3 3082f3 v drm 58 66 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 120 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 80 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resi stor) 50 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 70 10/160 (fcc part 68, 10/160 voltage wave shape) 60 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 55 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 38 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 50 5/320 (fcc part 68, 9/720 voltage wave shape, single) 50 10/560 (fcc part 68, 10/560 voltage wave shape) 45 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 35 non-repetitive peak on-state current, 0 c < t a < 70 c(see not es 1 and 3) 50 hz, 1 s d package p pa ckage sl pa ckage i tsm 4.3 5.7 7.1 a initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s j unction temperature t j -65 to +150 c storag e temperature range t stg -65 to +150 c notes: 1. further details on surge wave shapes are contained in the applications information section. 2. initially the tisp m ust be in thermal equilibrium with 0 c |