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300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 1 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited figure 1. package type of ap2128 sot-23-5 general description the ap2128 series are positive voltage regulator ics fabricated by cmos process. the ap2128 provides two kinds of output voltage operation modes for setting the output voltage. fixed output voltage mode senses the output voltage on v out , adjustable output voltage mode needs two resistors as a voltage divider. the ap2128 series have features of low dropout voltage, low noise, high ou tput voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. ap2128 have 1.0v, 1.2v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v, 3.9v, 4.2v, 4.75v, 5.2v fixed voltage versions and 0.8v to 5.5v adjustable voltage version. ap2128 series are available in sot-23-5 package. features wide operating voltage: 2.5v to 6v low dropout voltage:170mv@300ma for v out =3.3v, 140mv@300ma for v out =5.2v high output voltage accuracy: 2% high ripple rejection: 68db@ f=1khz, 54db@ f=10khz low standby current: 0.1 a low quiescent current: 60 a typical low output noise: 60 vrms@v out =0.8v short current limit: 50ma over temperature protection compatible with low esr ceramic capacitor: 1 f for c in and c out excellent line/load regulation soft start time: 50 s auto discharge resistance: r ds(on) =60 ? applications datacom notebook computers mother board
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 2 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited shutdown figure 2. pin configuration of ap2128 (top view) pin configuration k package (sot-23-5) v in gnd v out adj/nc functional block diagram fixed version shutdown gnd vin vout shutdown and logic control current limint and thermal protection mos driver v ref 1 2 34 5 1 2 3 4
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 3 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited functional block di agram (continued) figure 3. functional block diagram of ap2128 adjustable version shutdown and logic control current limint and thermal protection mos driver v ref shutdown gnd vin vout adj 1 2 3 4 5
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 4 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited bcd semiconductor's products, as designa ted with "g1" suffix in the part number, are rohs compliant and green. ordering information circuit type package k: sot-23-5 ap2128 - tr: tape and reel adj: adj output g1: green 1.0: fixed output 1.0v 1.2: fixed output 1.2v 1.5: fixed output 1.5v 1.8: fixed output 1.8v 2.5: fixed output 2.5v 2.8: fixed output 2.8v 3.3: fixed output 3.3v 4.2: fixed output 4.2v 4.75: fixed output 4.75v 5.2: fixed output 5.2v product package temperature range part number marking id packing type ap2128 sot-23-5 -40 to 85 o c ap2128k- adjtrg1 fad tape & reel ap2128k-1.0trg1 faj tape & reel ap2128k-1.2trg1 fak tape & reel ap2128k-1.5trg1 gan tape & reel ap2128k-1.8trg1 gap tape & reel ap2128k-2.5trg1 gaq tape & reel ap2128k-2.8trg1 gar tape & reel ap2128k-3.0trg1 gaw tape & reel ap2128k-3.3trg1 fal tape & reel ap2128k-3.9trg1 gbu tape & reel ap2128k-4.2trg1 gaz tape & reel ap2128k-4.75trg1 gfz tape & reel ap2128k-5.2trg1 gav tape & reel 3.0: fixed output 3.0v 3.9: fixed output 3.9v
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 5 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited parameter symbol value unit input voltage v in 6.5 v shutdown input voltage v ce -0.3 to v in +0.3 v output current i out 450 ma junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance ja 250 o c/w esd (human body model) esd 6000 v esd (machine model) esd 200 v absolute maximum ratings (note 1) parameter symbol min max unit input voltage v in 2.5 6 v operating ambient temperature range t a -40 85 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability.
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 6 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited electrical characteristics (ap2128-adj, v in min=2.5v, c in =1 f, c out =1 f, bold typeface applies over -40 o c t a 85 o c, unless otherwis e specified.) parameter symbol conditions min typ max unit reference voltage v ref v in =2.5v 1ma i out 300ma 0.784 0.8 0.816 v input voltage v in 2.5 6 v maximum output current i out(max) v in =2.5v, v out =98% v out 300 400 ma current limit i limit v in =2.5v 450 ma load regulation ? v out /( ? i out* v out ) v in =2.5v, 1ma i out 300ma 0.6 %/a line regulation ? v out /( ? v in *v out ) v in =2.5v to 6v i out =30ma 0.06 %/v quiescent current i q v in =2.5v, i out = 0ma 60 90 a standby current i std v in =2.5v, v shutdown in off mode 0.1 1.0 a power supply rejection ratio psrr ripple 1vp-p v in =3v f=100hz 68 db f=1khz 68 db f=10khz 54 db output voltage temperature coefficient ( ? v out /v out ) / ? t i out =30ma, -40 o c t a 85 o c 100 ppm/ o c short current limit i short v out =0v 50 ma soft start time t up 50 s rms output noise v noise t a =25 o c, 10hz f 100khz, v out =0.8v 60 vrms shutdown "high" voltage shutdown input voltage "high" 1.5 6 v shutdown "low" voltage shutdown input voltage "low" 0 0.4 v v out discharge mosfet r ds(on) shutdown input voltage "low" 60 ? shutdown pull down resis- tance 3m ? thermal shutdown 165 o c thermal shutdown hysteresis 30 o c thermal resistance jc sot-23-5 150 o c/w
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 7 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out v in =2.5v 1ma i out 300ma 98% v out 102% v out v input voltage v in 2.5 6 v maximum output current i out(max) v in =2.5v, v out =98% v out 300 400 ma current limit i limit v in =2.5v 450 ma load regulation ? v out /( ? i out* v out ) v in =2.5v, 1ma i out 300ma 0.6 %/a line regulation ? v out /( ? v in *v out ) v in =2.5v to 6v i out =30ma 0.06 %/v dropout voltage v drop v out =1.0v, i out =300ma 1400 1500 mv v out =1.2v, i out =300ma 1200 1300 v out =1.5v, i out =300ma 900 1000 v out =1.8v, i out =300ma 600 700 quiescent current i q v in =2.5v, i out = 0ma 60 90 a standby current i std v in =2.5v, v shutdown in off mode 0.1 1.0 a power supply rejection ratio psrr ripple 1vp-p v in =3v f=100hz 68 db f=1khz 68 db f=10khz 54 db output voltage temperature coefficient ( ? v out /v out ) / ? t i out =30ma, -40 o c t a 85 o c 100 ppm/ o c short current limit i short v out =0v 50 ma soft start time t up 50 s shutdown "high" voltage shutdown input voltage "high" 1.5 6 v shutdown "low" voltage shutdown input voltage "low" 0 0.4 v v out discharge mosfet r ds(on) shutdown input voltage "low" 60 ? shutdown pull down resis- tance 3m ? thermal shutdown 165 o c thermal shutdown hysteresis 30 o c thermal resistance jc sot-23-5 150 o c/w (ap2128-1.0v/1.2v/1.5v/1.8v, v in min.=2.5v, c in =1 f, c out =1 f, bold typeface applies over -40 o c t a 85 o c, unless oth- erwise specified.) electrical characteristics (continued)
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 8 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out v in =v out +1v 1ma i out 300ma 98% v out 102% v out v input voltage v in 2.5 6 v maximum output current i out(max) v in -v out =1v, v out =98% v out 300 400 ma current limit i limit v in -v out =1v 450 ma load regulation ? v out /( ? i out* v out ) v in -v out =1v, 1ma i out 300ma 0.6 %/a line regulation ? v out /( ? v in *v out ) v out +0.5v v in 6v, i out =30ma 0.06 %/v dropout voltage v drop v out =2.5v, 2.8v, 3.0v, 3.3v, 3.9v, 4.2v, i out =300ma 170 300 mv v out =4.75v and 5.2v, i out =300ma 140 300 quiescent current i q v in =v out +1v, i out =0ma 60 90 a standby current i std v in =v out +1v, v shutdown in off mode 0.1 1.0 a power supply rejection ratio psrr ap2128-2.5v to 4.2v, ripple 1vp-p v in =v out +1v f=100hz 68 db f=1khz 68 f=10khz 54 ap2128-4.75v , ripple 0.5vp-p v in =v out +1v f=100hz 63 f=1khz 63 f=10khz 45 ap2128-5.2v , ripple 0.5vp-p v in =6v f=100hz 63 f=1khz 63 f=10khz 45 output voltage temperature coefficient ( ? v out /v out ) / ? t i out =30ma, -40 o c t a 85 o c 100 ppm/ o c short current limit i short v out =0v 50 ma (ap2128-2.5v/2.8v/3.0v/3.3v/3.9v/4.2v/4.75v, v in =v out +1v; ap2128-5.2v, v in =6v, c in =1 f, c out =1 f, bold type- face applies over -40 o c t a 85 o c, unless otherwis e specified.) electrical characteristics (continued)
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 9 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited (ap2128-2.5v/2.8v/3.0v/3.3v/3.9v/4.2v/4.75v, v in =v out +1v; ap2128-5.2v, v in =6v, c in =1 f, c out =1 f, bold type- face applies over -40 o c t a 85 o c, unless otherwis e specified.) electrical characteristics (continued) parameter symbol conditions min typ max unit soft start time t up 50 s shutdown "high" voltage shutdown input voltage "high" 1.5 6 v shutdown "low" voltage shutdown input voltage "low" 0 0.4 v v out discharge mosfet r ds(on) shutdown input voltage "low" 60 ? shutdown pull down resis- tance 3m ? thermal shutdown 165 o c thermal shutdown hysteresis 30 o c thermal resistance jc sot-23-5 150 o c/w
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 10 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited figure 4. output voltage vs. output current 0 50 100 150 200 250 300 350 400 450 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (ma) t c =-40 o c t c =25 o c t c =125 o c v in =4.4v 0 100 200 300 400 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 output voltge (v) output current (v) t c =-40 o c t c =25 o c t c =85 o c v in =2.5v, v out =0.8v 0.00.10.20.30.40.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (a) v in =3.8v v in =4.3v v in =6v t c =25 0 c, v out =3.3v 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 output voltage (v) output current (a) t c =-40 o c t c =25 o c t c =85 o c v in =6v, v out =5.2v figure 5. output voltage vs. output current figure 6. output voltage vs. output curren t figure 7. output voltage vs. output current typical performance characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (a) t c =-40 o c t c =25 o c t c =85 o c v in =4.3v, v out =3.3v
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 11 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 11. dropout volt age vs. case temperature figure 8. dropout voltage vs. output current 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 220 240 dropout voltage (mv) output current (ma) t c =-40 o c t c =25 o c t c =85 o c v out =3.3v 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 20 40 60 80 100 120 140 160 180 dropout voltage (mv) output current (a) t c =-40 o c t c =25 o c t c =85 o c v in =6v, v out =5.2v -40-20 0 20406080 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 dropout voltage (v) case temperature ( o c) i out =10ma i out =150ma i out =300ma v in =4.3v, v out =3.3v -40-20 0 20406080 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 dropout voltage (mv) case temperature ( o c) i out =10ma i out =150ma i out =300ma v in =6v, v out =5.2v figure 9. dropout voltage vs. output current figure 10. dropout voltage vs. case temperature
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 12 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited figure 12. quiescent current vs. output current 0 50 100 150 200 250 300 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 quiescent current ( a) output current (ma) t c =-40 o c t c =25 o c t c =85 o c v in =2.5v, v out =0.8v -40-20 0 20406080100120 50 52 54 56 58 60 62 64 66 68 70 quiescent current ( a) case temperature ( o c) i out =0 v in =2.5v, v out =0.8v figure 15. quiescent curr ent vs. case temperature typical performance ch aracteristics (continued) 0 50 100 150 200 250 300 65 70 75 80 85 90 95 100 105 110 115 quiescent current ( a) output current (ma) t c =-40 o c t c =25 o c t c =85 o c v in =4.3v, v out =3.3v 0.00 0.05 0.10 0.15 0.20 0.25 0.30 75 80 85 90 95 100 105 110 115 quiescent current ( a) output current (a) t c =-40 o c t c =25 o c t c =85 o c v in =6v, v out =5.2v figure 13. quiescent current vs. output current figure 14. quiescent curr ent vs. output current
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 13 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited -40-20 0 20406080100120 62 63 64 65 66 67 68 69 70 71 quiescent current ( a) case temperature ( o c) i out =0 v in =4.3v, v out =3.3v figure 18. quiescent current vs. input voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 10 20 30 40 50 60 70 80 quiescent current ( a) input voltage (v) t c =25 o c i out =0, v out =0.8v 0123456 0 10 20 30 40 50 60 70 80 quiescent current ( a) input voltage (v) t c =25 o c i out =0, v out =3.3v figure 16. quiescent current vs. case temperature f igure 17. quiescent current vs. case temperature figure 19. quiescent current vs. input voltage typical performance ch aracteristics (continued) -40-20 0 20406080100120 60 62 64 66 68 70 72 74 quiescent current ( a) case temperature ( o c) i out =0 v in =6v, v out =5.2v
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 14 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited -40-200 20406080100120 0.801 0.802 0.803 0.804 0.805 0.806 0.807 output voltage (v) case temperature ( o c) v in =2.5v, c in =c out =1 f i out =10ma, v out =0.8v typical performance ch aracteristics (continued) figure 20. quiescent current vs. input voltage f igure 21. output voltage vs. case temperature figure 22. output voltage vs. case temperature f igure 23. output voltage vs. case temperature 0123456 0 10 20 30 40 50 60 70 80 quiescent current ( a) input voltage (v) t c =25 o c i out =0, v out =5.2v -40 -20 0 20 40 60 80 100 120 3.326 3.328 3.330 3.332 3.334 3.336 3.338 3.340 3.342 3.344 3.346 3.348 output voltage (v) case temperature ( o c) i out =10ma v in =4.3v, v out =3.3v -40-20 0 20406080100120 5.195 5.200 5.205 5.210 5.215 5.220 5.225 5.230 5.235 5.240 5.245 5.250 output voltage (v) case temperature ( o c) i out =10ma v in =6v, v out =5.2v
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 15 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) 012345678 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 output voltge (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c v out =0.8v figure 26. output voltage vs. input voltage (i out =0ma) figure 27. output voltage vs. input voltage (i out =300ma) 0123456 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 output voltge (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c v out =0.8v -40-20 0 20406080100120 30 32 34 36 38 40 42 44 46 48 50 52 54 56 short current (ma) case temperature ( o c) v in =6v, v out =5.2v figure 25. short current vs. case temperature figure 24. short current vs. case temperature -40-20 0 20406080100120 26 28 30 32 34 short current (ma) case temperature ( o c) v in =2.5v, v out =0.8v, c in =c out =1 f
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 16 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c i out =0, v out =3.3v figure 28. output voltage vs. input voltage 0123456 0 1 2 3 4 5 6 output voltage (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c i out =0, v out =5.2v figure 30. power dissipation vs. case temperature -40 -20 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 power dissipation (w) case temperature ( o c) v out =0.8v no heatsink figure 31. load transient (conditions: c in =c out =1 f, v in =2.5v, v out =0.8v, i out v out figure 29. output voltage vs. input voltage i out =10ma to 300ma)
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 17 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 32. load transient (conditions: c in =c out =1 f, v in =4.4v, v out =3.3v v out figure 33. line transient (conditions: i out =30ma, c in =c out =1 f, v in =2.5 to 3.5v, v out =0.8v) v in v out i out figure 34. line transient (conditions: i out =30ma, c in =c out =1 f, v in =4 to 5v, v out =3.3v) v in v out figure 35. soft start time (conditions: i out =0ma, c in =c out =1 f, v shutdown =0 to 2v, v out =3.3v) v out v shutdown i out =10ma to 300ma)
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 18 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited 100 1000 10000 100000 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) i out =10ma i out =300ma ripple=1vpp, c out =1 f, v out =0.8v typical performance ch aracteristics (continued) figure 36. soft start time (conditions: i out =0ma, c in =c out =1 f, v shutdown =0 to 2v, v out =0.8v) v out v shutdown figure 37. psrr vs. frequency figure 38. psrr vs. frequency 100 1000 10000 100000 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) i out =10ma i out =300ma ripple=1vpp, c out =1 f, v out =3.3v figure 39. psrr vs. frequency 100 1k 10k 100k 10 20 30 40 50 60 70 psrr (db) frequency (hz) i out =10ma i out =300ma v out =5.2v, c out =1 f, ripple=0.5v pp
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 19 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited typical application v out =0.8(1+r1/r2) v v out =1.0v to 5.2v figure 40. typical application of ap2128 v in v in v out v out shutdown gnd c out 1 f c in 1 f ap2128 v in v in v out v out adj shutdown gnd c out 1 f c in 1 f r1 r2 ap2128
300ma high speed, extremely low noise cmos ldo regulator ap2128 data sheet 20 sept. 2010 rev. 2.0 bcd semiconductor manufacturing limited mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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