1996 data sheet compound field effect p ower transistor m pa1523b document no. g11331ej1v0ds00 date published may 1996 p printed in japan the information in this document is subject to change without notice. p-channel power mos fet array switching industrial use description the m pa1523b is p-channel power mos fet array that built in 4 circuits designed for solenoid, motor and lamp driver. features ? full mold package with 4 circuits ? C4 v driving is possible ? low on-state resistance r ds(on)1 = 0.8 w max. (@v gs = C10 v, i d = C1 a) r ds(on)2 = 1.3 w max. (@v gs = C4 v, i d = C1 a) ? low input capacitance ciss = 190 pf typ. ordering information type number package m pa1523bh 10 pin sip absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0) v dss C60 v gate to source voltage (v ds = 0) v gss(ac) 20 v drain current (dc) i d(dc) 2.0 a/unit drain current (pulse) i d(pulse) *1 8.0 a/unit total power dissipation p t1 *2 28 w total power dissipation p t2 *3 3.5 w channel temperature t ch 150 c storage temperature t stg C55 to + 150 c single avalanche current i as *4 C2.0 a single avalanche energy e as *4 0.4 mj *1 pw - 10 m s, duty cycle - 1% *2 4 circuits, t c = 25 c *3 4 circuits, t a = 25 c *4 starting t ch = 25 c, v dd = C30 v, v gs = C20 v ? 0, r g = 25 w , l = 100 m h build-in gate diodes are for protection from static electricity in handing. in case high voltage over v gss is applied, please append gate protection circuits. 26.8 max. 10 2.5 1.4 0.6 ?0.1 2.54 4.0 10 min. 1.4 0.5 ?0.1 12345678910 package dimensions in millimeters connection diagram 2 1 3 4 5 6 7 8 9 10 electrode connection 2, 4, 6, 8 3, 5, 7, 9 1, 10 : gate : drain : source
m pa1523b 2 electrical characteristics (t a = 25 c) characteristic symbol test conditions min. typ. max. unit drain leakage current i dss v ds = C60 v, v gs = 0 C10 m a gate leakage current i gss v gs = 20 v, v ds = 0 10 m a gate cutoff voltage v gs(off) v ds = C10 v, i d = C1.0 ma C1.0 C2.0 v forward transfer admittance | y fs |v ds = C10 v, i d = C1.0 a 0.8 s drain to source on-resistance r ds(on)1 v gs = C10 v, i d = C1.0 a 0.5 0.8 w drain to source on-resistance r ds(on)2 v gs = C4.0 v, i d = C1.0 a 0.8 1.3 w input capacitance c iss v ds = C10 v, v gs = 0, f = 1.0 mhz 190 pf output capacitance c oss 115 pf reverse transfer capacitance c rss 43 pf turn-on delay time t d(on) i d = C1.0 a, v gs(on) = C10 v, 8 ns rise time t r v dd = C30 v, r l = 30 w 53 ns turn-off delay time t d(off) 400 ns fall time t f 230 ns total gate charge q g v gs = C10 v, i d = C2.0 a, v dd = C48 v 10 nc gate to source charge q gs 1.1 nc gate to drain charge q gd 3.5 nc body diode forward voltage v f(s-d) i f = 2.0 a, v gs = 0 1.0 v reverse recovery time t rr i f = 2.0 a, v gs = 0, di/dt = 50 a/ m s 180 ns reverse recovery charge q rr 250 nc . .
m pa1523b 3 test circuit 1 avalanche capability pg. v gs = ?0 v ? 0 r g = 25 w 50 w d.u.t. l v dd v dd i d i as bv dss v ds starting t ch test circuit 2 switching time pg. r g r g = 10 w d.u.t. r l v dd t t = 1 s duty cycle 1 % m 0 v gs v gs i d (? v gs wave form i d wave form 0 10 % 90 % v gs(on) i d 0 10 % 90 % 10 % 90 % t d(on) t r t on t d(off) t f t off test circuit 3 gate charge pg. i g = 2 ma 50 w d.u.t. r l v dd
m pa1523b 4 typical characteristics (t a = 25 c) forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a ?.1 ?.1 ?.0 ?0 ?00 ?.0 ?0 ?00 t c = 25 ?c single pulse t a - ambient temperature - ?c p t - total power dissipation - w 0 50 100 150 3.0 2.0 1.0 total power dissipation vs. ambient temperature 0.5 1.5 2.5 t c - case temperature - ?c p t - total power dissipation - w 0 100 150 30 20 10 total power dissipation vs. case temperature 4 circuits operation 2 circuits operation 3 circuits operation 1 circuit operation r ds(on) limited(v gs = ?0 v) derating factor of forward bias safe operating area t c - case temperature - ?c dt - percentage of rated power - % 0 20 40 60 80 100 120 140 160 20 40 60 80 100 dc i d(pulse) 3.5 under same dissipation in each circuit t c is grease temperature on back surface i d(dc) pw = 100 s 1 ms 10 ms 500 s forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a ?.01 ?.1 ? ?0 0 ? ? pulsed v ds = ?0 v drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 ? ? ? ? ? ? ? pulsed v gs = ?10 v v gs = ? v power dissipation limited ? ? ?0 t a =125 ?c 75 ?c 25 ?c ?5 ?c 4 circuits operation 2 circuits operation 3 circuits operation 1 circuit operation nec pa1523bh m m m lead print circuit boad 50 under same dissipation in each circuit
m pa1523b 5 transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ?c/w 1 000 10 100 100 10 m 1 m 100 m 1 10 1 000 forward transfer admittance vs. drain current i d - drain current - a ?.01 ?.1 10 100 ?.0 ?0 0.1 | y fs | - forward transfer admittance - s drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - w 0 ?0 0.5 ?0 pulsed 1.0 1.5 i d = ? a ? a ?.4 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m w ?0 ?.1 0 1 000 1 500 gate to source cutoff voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cutoff voltage - v ? ?0 0 50 100 150 0 ? v ds = ?0 v i d = ? ma 0.1 1.0 100 m single pulse r th(ch-a) 4ircuits 3ircuits 2ircuits 1ircuit r th(ch-c) 1.0 t a = ?5 ?c 25 ?c 75 ?c 125 ?c v ds = 10 v pulsed ?.0 500 pulsed v gs = ? v v gs = ?0 v
m pa1523b 6 v gs - gate to source voltage - v dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 04 26 0812 10 ?0 ?0 ?0 ?0 ? ? ? ? ?0 ?2 ?4 ?6 0 v gs v ds v dd = ?2 v ?0 v ?8 v i d = ? a capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 10 ?.1 100 1 000 10 000 ? ?0 ?00 v gs = 0 f = 1 mhz c iss c oss c rss drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - m w 0 ?0 0 50 100 150 1600 1200 800 400 v gs = ? v v gs = ?0 v i d = ? a source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a 0.1 0 1.0 10 switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1.0 10 100 1 000 ?.01 ?.0 ?0 v dd = ?0 v v gs = ?0 v r g = 10 w reverse recovery time vs. drain current i d - drain current - a t rr - reverse recovery time - ns 10 100 1 000 ?.1 ?.0 ?0 di/dt = 50a/ s v gs = 0 m ?.1 t d(off) t r t f t d(on) 1.0 2.0 pulsed v gs = ? v v gs =0
m pa1523b 7 single avalanche current vs. inductive load l - inductive load - h i as - single avalanche current - a ?.1 ?.0 ?0 ?.1 100 1 m 10 mm 10 m i as = ? a single avalanche energy derating factor starting t ch - starting channel temperature - ?c energy derating factor - % 0 25 20 80 50 75 100 125 150 100 60 40 e as = 0.4 mj v dd = ?0 v r g = 25 w v gs = ?0 v ? 0 i as 1.0 a v dd = ?0 v v gs = ?0 v ? 0 r g = 25 w starting t ch = 25 ?c reference document name document no. nec semiconductor for device reliability/quality control system tei-1202 quality grade on nec semiconductor devices iei-1209 semiconductor device mounting technology manual c10535e semiconductor device package manual c10943x guide to quality assurance for semiconductor devices mei-1202 semiconductor selection guide x10679e power mos fet features and application switching power supply tea-1034 application circuits using power mos fet tea-1035 safe operating area of power mos fet tea-1037
2 m pa1523b no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: standard, special, and specific. the specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in standard unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11 [memo]
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