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  ? 2011 microchip technology inc. ds22200c-page 1 features ? 150 ma output current ? low drop out voltage, 260 mv typical @ 20 ma, v r = 3.3v ? 50 a typical quiescent current ? 0.01 a typical shutdown current ? input operating voltage range: 2.0v to 28.0v ? standard output voltage options (1.8v, 2.5v, 3.0v, 3.3v, 5.0v, 10.0v, 12.0v) ? output voltage accuracy: 2% ? output voltages from 1.8v to 18.0v in 0.1v increments are available upon request ? stable with ceramic output capacitors ? current limit protection with current foldback ? shutdown pin ? high psrr: 50 db typical @ 1 khz applications ? cordless phones, wireless communications ? pdas, notebook and netbook computers ?digital cameras ? microcontroller power ? car audio and navigation systems ? home appliances related literature ? an765, ?using microchip?s micropower ldos? , ds00765, microchip technology inc., ?2002 ? an766, ?pin-compatible cmos upgrades to bipolar ldos? , ds00766, microchip technology inc., ?2002 ? an792, ?a method to determine how much power a sot23 can dissipate in an application? , ds00792, microchip technology inc., ?2001 description the mcp1804 is a family of cmos low dropout (ldo) voltage regulators that can deliver up to 150 ma of current while consuming only 50 a of quiescent current (typical, 1.8v v out 5.0v). the input operating range is specified from 2.0v to 28.0v. the mcp1804 is capable of delivering 100 ma with only 1300 mv (typical) of input to output voltage differential (v out = 3.3v). the output voltage tolerance of the mcp1804 at +25c is a maximum of 2%. line regulation is 0.15% typical at +25c. the ldo input and output is stable with 0.1 f of input and output capacitance. ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. overcurrent limit with current foldback to 40 ma (typical) provides short-circuit protection. a shutdown (shdn ) function allows the output to be enabled or disabled. when disabled, the mcp1804 draws only 0.01 a of current (typical). package options include the sot-23-5 (sot-25), sot- 89-3, sot-89-5, and sot-223-3. package types sot-23-5 123 54 v out v in nc shdn gnd sot-89-5 (top view) 123 54 v out shdn v in nc gnd 123 v out v in gnd (top view) sot-223 123 v out v in gnd (top view) sot-89-3 150 ma, 28v ldo regulator with shutdown mcp1804
mcp1804 ds22200c-page 2 ? 2011 microchip technology inc. functional block diagram typical application circuit thermal + - v in v out gnd error amplifier voltage reference current limiter shutdown control shdn protection *5-pin versions only * v in c in 1f c out 1fceramic v in 12v battery + v out shdn gnd nc ceramic v out 5.0v @ 30 ma 1 2 3 5 4 sot-25 mcp1804
? 2011 microchip technology inc. ds22200c-page 3 mcp1804 1.0 electrical characteristics absolute maximum ratings ? input voltage ...................................................... +30v output current (continuous)........... p d /(v in -v out )ma output current (peak)...................................... 300 ma output voltage ..................... (v ss -0.3v) to (v in +0.3v) s hdn voltage ................................(v ss -0.3v) to +30v ? notice: stresses above those listed under ?maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. electrical characteristics electrical specifications: unless otherwise specified, all limits are established for v in = v r + 2.0v, note 1 , c out = 1 f (x7r), c in = 1 f (x7r), v shdn = v in , t a = +25c parameters sym min typ max units conditions input / output characteristics input operating voltage v in 2.0 ? 28.0 v note 1 input quiescent current i q i l = 0 ma ? 50 105 a 1.8v v out 5.0v ? 60 115 a 5.1v v out 12.0v ? 65 125 a 12.1v v out 18.0v shutdown current i shdn ? 0.01 0.10 a shdn = 0v maximum output current i out_ma v in = v r + 3.0v 100 ? ? ma v out <3.0v 150 ? ? ma v out 3.0v current limiter i limit ? 200 ? ma output short circuit current i out_sc ?40? ma output voltage regulation v out v r -2.0% v r v r +2.0% v i out =10ma, note 2 v out temperature coefficient tcv out ? 100 ? ppm/c i out =20ma, -40c t a + 85c, note 3 line regulation v out / (v out x v in ) (v r +2v) v in 28v, note 1 ? 0.05 0.10 %/v i out = 5 ma ? 0.15 0.30 %/v i out = 13 ma load regulation v out /v out i l = 1.0 ma to 50 ma, note 4 ?5090 mv1.8v v out 5.0v ? 110 175 mv 5.1v v out 12.0v ? 180 275 mv 12.1v v out 18.0v note 1: the minimum v in must meet one condition: v in (v r + 2.0v). 2: v r is the nominal regulator output voltage with an input voltage of v in = v r + 2.0v. for example: v r = 1.8v, 2.5v, 3.0v, 3.3v, etc. 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty cycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of v r + 2.0v.
mcp1804 ds22200c-page 4 ? 2011 microchip technology inc. dropout voltage note 1 , note 5 v dropout i l = 20 ma ?550710 mv1.8v v r 1.9v ? 450 600 mv 2.0v v r 2.1v ? 390 520 mv 2.2v v r 2.4v ? 310 450 mv 2.5v v r 2.9v ? 260 360 mv 3.0v v r 3.9v ? 220 320 mv 4.0v v r 4.9v ? 190 280 mv 5.0v v r 6.4v ? 170 230 mv 6.5v v r 8.0v ? 130 190 mv 8.1v v r 10.0v ? 120 170 mv 10.1v v r 18.0v i l = 100 ma ? 2200 2700 mv 1.8v v r 1.9v ? 1900 2600 mv 2.0v v r 2.1v ? 1700 2200 mv 2.2v v r 2.4v ? 1500 1900 mv 2.5v v r 2.9v ? 1300 1700 mv 3.0v v r 3.9v ? 1100 1500 mv 4.0v v r 4.9v ? 1000 1300 mv 5.0v v r 6.4v ? 800 1150 mv 6.5v v r 8.0v ? 700 950 mv 8.1v v r 10.0v ? 650 850 mv 10.1v v r 18.0v shdn ?h? voltage v shdn_h 1.1 ? v in vv in = 28v shdn ?l? voltage v shdn_l 0 ? 0.35 v v in = 28v shdn current i shdn -0.1 ? 0.1 a v in = 28v, v shdn = gnd or v in power supply ripple rejection ratio psrr ? 50 ? db f = 1 khz, i l = 20 ma, v inac = 0.5v pk-pk, c in = 0 f thermal shutdown protection tsd ? 150 ? c t j thermal shutdown hysteresis tsd ? 25 ? c electrical characteristics (continued) electrical specifications: unless otherwise specified, all limits are established for v in = v r + 2.0v, note 1 , c out = 1 f (x7r), c in = 1 f (x7r), v shdn = v in , t a = +25c parameters sym min typ max units conditions note 1: the minimum v in must meet one condition: v in (v r + 2.0v). 2: v r is the nominal regulator output voltage with an input voltage of v in = v r + 2.0v. for example: v r = 1.8v, 2.5v, 3.0v, 3.3v, etc. 3: tcv out = (v out-high - v out-low ) *10 6 / (v r * temperature), v out-high = highest voltage measured over the temperature range. v out-low = lowest voltage measured over the temperature range. 4: load regulation is measured at a constant junction temperature using low duty cycle pulse testing. changes in output voltage due to heating effects are determined using thermal regulation specification tcv out . 5: dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of v r + 2.0v.
? 2011 microchip technology inc. ds22200c-page 5 mcp1804 temperature specifications parameters sym min typ max units conditions temperature ranges operating temperature range t a -40 +85 c storage temperature range tstg -55 +125 c thermal package resistance thermal resistance, 5ld sot-23 ja jc ? ? 256 81 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board thermal resistance, 3ld sot-89 thermal resistance, 5ld sot-89 ja jc ? ? 180 100 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board thermal resistance, 3ld sot-223 ja jc ? ? 62 15 ? ? c/w eia/jedec jesd51-7 fr-4 0.063 4-layer board
mcp1804 ds22200c-page 6 ? 2011 microchip technology inc. 2.0 typical performance curves note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-1: output voltage vs. output current. figure 2-2: output voltage vs. output current. figure 2-3: output voltage vs. output current. figure 2-4: output voltage vs. output current. figure 2-5: output voltage vs. output current. figure 2-6: output voltage vs. output current. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) ta=-40 ta=25 ta=85 v r =2.8v v in =shdn=4.8v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) ta=-40 ta=25 ta=85 v r =5v v in =shdn=8.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) ta=-40 ta=25 ta=85 v r =12v v in =shdn=15v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) vin=2.8v vin=3.8v vin=4.8v v r =1.8v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) vin=6v vin=7v vin=8v v r =5.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0 50 100 150 200 250 300 output current (ma) output voltage (v) vin=13v vin=14v vin=15v v r =12v
? 2011 microchip technology inc. ds22200c-page 7 mcp1804 note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-7: output voltage vs. input voltage. figure 2-8: output voltage vs. input voltage. figure 2-9: output voltage vs. input voltage. figure 2-10: output voltage vs. input voltage. figure 2-11: output voltage vs. input voltage. figure 2-12: output voltage vs. input voltage. 1.5 1.6 1.7 1.8 1.9 2.0 2.1 0.8 1.3 1.8 2.3 2.8 3.3 3.8 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =1.8v 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 4.0 4.5 5.0 5.5 6.0 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =5v 9.0 10.0 11.0 12.0 13.0 14.0 15.0 10 11 12 13 14 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =12v 1.5 1.6 1.7 1.8 1.9 2.0 2.1 4 8 12 16 20 24 28 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =1.8v 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 8 1216202428 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =5v 9.0 10.0 11.0 12.0 13.0 14.0 15.0 14 16 18 20 22 24 26 28 input voltage (v) output voltage (v) iout=1ma iout=10ma iout=30ma v r =12v
mcp1804 ds22200c-page 8 ? 2011 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-13: dropout voltage vs. load current. figure 2-14: dropout voltage vs. load current. figure 2-15: dropout voltage vs. load current. figure 2-16: supply current vs. input voltage. figure 2-17: supply current vs. input voltage. figure 2-18: supply current vs. input voltage. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 output current (ma) dropout voltage (v) ta=85 ta=25 ta=-40 v r =1.8v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 output current (ma) dropout voltage (v) ta=85 ta=25 ta=-40 v r =5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 output current (ma) dropout voltage (v) ta=85 ta=25 ta=-40 v r =12v 0 10 20 30 40 50 60 70 0 4 8 1216202428 input voltage (v) supply current (a) ta=85 ta=25 ta=-40 v r =1.8v 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 28 input voltage (v) supply current (a) ta=85 ta=25 ta=-40 v r =5v 0 10 20 30 40 50 60 70 0 4 8 1216202428 input voltage (v) supply current (a) ta=85 ta=25 ta=-40 v r =12v
? 2011 microchip technology inc. ds22200c-page 9 mcp1804 note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-19: supply current vs. input voltage. figure 2-20: supply current vs. input voltage. figure 2-21: supply current vs. input voltage. figure 2-22: output voltage vs. ambient temperature. figure 2-23: output voltage vs. ambient temperature. figure 2-24: output voltage vs. ambient temperature. 0 10 20 30 40 50 60 70 -40-20 0 20406080100 ambient temperature (c) supply current (a) v r =1.8v 0 10 20 30 40 50 60 70 -40-20 0 20406080100 ambient temperature (c) supply current (a) v r =5v 0 10 20 30 40 50 60 70 -40-200 20406080100 ambient temperature (c) supply current (a) v r =12v 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 -50-25 0 255075100 ambient temperature (c output voltage (v) iout=1ma iout=10ma iout=20ma v r =1.8v 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 -50-25 0 255075100 ambient temperature (c output voltage (v) iout=1ma iout=10ma iout=20ma v r =5v 11.5 11.6 11.7 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 -50 -25 0 25 50 75 100 ambient temperature (c output voltage (v) iout=1ma iout=10ma iout=20ma v r =12v
mcp1804 ds22200c-page 10 ? 2011 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-25: dynamic line response. figure 2-26: dynamic line response. figure 2-27: dynamic line response. figure 2-28: dynamic line response. figure 2-29: dynamic line response. figure 2-30: dynamic line response. 1.3 2.3 3.3 4.3 5.3 6.3 7.3 time (1ms/div) input voltage (v) 3.26 3.28 3.30 3.32 3.34 3.36 3.38 output voltage (v) v out v in v r =3.3v i out =1 ma 3 4 5 6 7 8 9 time (1ms/div) input voltage (v) 4.96 4.98 5.00 5.02 5.04 5.06 5.08 output voltage (v) v out v in v r =5v i out 1 ma 10 11 12 13 14 15 16 time (1ms/div) input voltage (v) 11.96 11.98 12.00 12.02 12.04 12.06 12.08 output voltage (v) v out v in v r =12v i out =1 ma 1.3 2.3 3.3 4.3 5.3 6.3 7.3 time (1ms/div) input voltage (v) 3.26 3.28 3.30 3.32 3.34 3.36 3.38 output voltage (v) v out v in v r =3.3v i out =30 ma 3 4 5 6 7 8 9 time (1ms/div) input voltage (v) 4.96 4.98 5.00 5.02 5.04 5.06 5.08 output voltage (v) v out v in v r =5v i out =30 ma 10 11 12 13 14 15 16 time (1ms/div) input voltage (v) 11.96 11.98 12.00 12.02 12.04 12.06 12.08 output voltage (v) v r =12v i out =30 ma v out v in
? 2011 microchip technology inc. ds22200c-page 11 mcp1804 note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-31: dynamic load response. figure 2-32: dynamic load response. figure 2-33: dynamic load response. figure 2-34: startup response. figure 2-35: startup response. figure 2-36: startup response. 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 time (1ms/div) output voltage (v) 0 30 60 90 120 150 output current (ma) output current v out v r =3.3v 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 time (1ms/div) output voltage (v) 0 30 60 90 120 150 output current (ma) output current v out v r = 5v 10.6 10.8 11.0 11.2 11.4 11.6 11.8 12.0 12.2 12.4 12.6 time (1ms/div) output voltage (v) 0 30 60 90 120 150 output current (ma) v out v r = 12v i out -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) input voltage (v) 0 1 2 3 4 5 6 7 8 output voltage (v) v out v r =3.3v i out =1 ma v in -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) input voltage (v) 0 1 2 3 4 5 6 7 8 output voltage (v) v out v r =3.3v i out =30 ma v in -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) input voltage (v) 0 1 2 3 4 5 6 7 8 output voltage (v) v out v r =5.0v i out =1 ma v in
mcp1804 ds22200c-page 12 ? 2011 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-37: startup response. figure 2-38: startup response. figure 2-39: startup response. figure 2-40: shdn response. figure 2-41: shdn response. figure 2-42: shdn response. -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) input voltage (v) 0 1 2 3 4 5 6 7 8 output voltage (v) v out v r =5.0v i out =30 ma v in -15 -10 -5 0 5 10 15 time (1ms/div) input voltage (v) 0 3 6 9 12 15 18 output voltage (v) v r =12v i out =1 ma v out v in -15 -10 -5 0 5 10 15 time (1ms/div) input voltage (v) 0 3 6 9 12 15 18 output voltage (v) v r =12v i out =30 ma v in v out -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) shdn voltage (v) 0 1 2 3 4 5 6 7 8 v out (v) v r =3.3v i out =1 ma v out shdn -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) shdn voltage (v) 0 1 2 3 4 5 6 7 8 v out (v) v r =5v i out =1 ma v out shdn -15 -10 -5 0 5 10 15 time (1ms/div) shdn voltage (v) 0 3 6 9 12 15 18 vout (v) v r =12v i out =1 ma v out shdn
? 2011 microchip technology inc. ds22200c-page 13 mcp1804 note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-43: shdn response. figure 2-44: shdn response. figure 2-45: shdn response. figure 2-46: psrr 3.3v @ 1 ma. figure 2-47: psrr 5.0v @ 1 ma. figure 2-48: psrr 12.0v @ 1 ma. -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) shdn voltage (v) 0 1 2 3 4 5 6 7 8 v out (v) v r =3.3v i out =30 ma v out shdn -8 -6 -4 -2 0 2 4 6 8 time (1ms/div) shdn voltage (v) 0 1 2 3 4 5 6 7 8 v out (v) v r =5v i out =30 ma v out shdn -15 -10 -5 0 5 10 15 time (1ms/div) shdn voltage (v) 0 3 6 9 12 15 18 v out (v) v out v r =12v i out =30 ma shdn 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 ripple frequency: f (khz) ripple rejection rate: psrr (db) v out =3.3v c in =0 i out =1 ma v in_ac =0.5vp-p 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 ripple frequency: f (khz) ripple rejection rate: psrr (db) v out =5v c in =0 i out =1 ma v in_ac =0.5vp-p 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 ripple frequency: f (khz) ripple rejection rate: psrr (db) v out =12v c in =0 i out =1 ma v in_ac =0.5vp-p
mcp1804 ds22200c-page 14 ? 2011 microchip technology inc. note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-49: psrr 3.3v @ 30 ma. figure 2-50: psrr 5.0v @ 30 ma. figure 2-51: psrr 12v @ 30 ma. figure 2-52: psrr 5v @ 30 ma. figure 2-53: ground current vs. output current. figure 2-54: ground current vs. output current. output current: iout (ma)
? 2011 microchip technology inc. ds22200c-page 15 mcp1804 note: unless otherwise indicated: c out = 1 f ceramic (x7r), c in = 1 f ceramic (x7r), t a = +25c, v in = v r + 2.0v. figure 2-55: ground current vs. output current. 0.01 0.1 1 ripple frequency f [khz] 10.00 1.00 0.10 0.01 output noise density [ v hz] v r = 3.3v v in = 5.0v i out = 50 ma 10 100
mcp1804 ds22200c-page 16 ? 2011 microchip technology inc. 3.0 pin descriptions the descriptions of the pins are listed in tab l e 3 - 1 . table 3-1: mcp1804 pin function table 3.1 unregulated input voltage (v in ) connect v in to the input unregulated source voltage. like all low dropout linear regulators, low source impedance is necessary for the stable operation of the ldo. the amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. for most applications, 0.1 f to 1.0 f of capacitance will ensure stable operation of the ldo circuit. the type of capacitor used can be ceramic, tantalum or aluminum electrolytic. the low esr characteristics of the ceramic will yield better noise and psrr performance at high-frequency. 3.2 ground terminal (gnd) regulator ground. tie gnd to the negative side of the output and the negative side of the input capacitor. only the ldo bias current (50 to 60 a typical) flows out of this pin; there is no high current. the ldo output regulation is referenced to this pin. minimize voltage drops between this pin and the negative side of the load. 3.3 shutdown input (shdn ) the shdn input is used to turn the ldo output voltage on and off. when the shdn input is at a logic-high level, the ldo output voltage is enabled. when the shdn input is pulled to a logic-low level, the ldo output voltage is disabled and the ldo enters a low quiescent current shutdown state where the typical quiescent current is 0.01 a. the shdn pin does not have an internal pullup or pulldown resistor. the s hdn pin must be connected to either v in or gnd to prevent the device from becoming unstable. 3.4 regulated output voltage (v out ) connect v out to the positive side of the load and the positive terminal of the output capacitor. the positive side of the output capacitor should be physically located as close to the ldo v out pin as is practical. the current flowing out of this pin is equal to the dc load current. for most applications, 0.1 f to 1.0 f of capacitance will ensure stable operation of the ldo circuit. larger values may be used to improve dynamic load response. the type of capacitor used can be ceramic, tantalum or aluminum electrolytic. the low esr characteristics of the ceramic will yield better noise and psrr performance at high-frequency. mcp1804 symbol description sot-23-5 sot-89-5 sot-89-3 sot-223-3 15 3 3v in unregulated supply voltage 2 2,tab 2, tab 2 gnd ground terminal 34 ? tab nc no connection 43 ?? shdn shutdown 51 1 1v out regulated voltage output
? 2011 microchip technology inc. ds22200c-page 17 mcp1804 4.0 detailed description 4.1 output regulation a portion of the ldo output voltage is fed back to the internal error amplifier and compared with the precision internal bandgap reference. the error amplifier output will adjust the amount of current that flows through the p-channel pass transistor, thus regulating the output voltage to the desired value. any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to figure 4-1 ). 4.2 overcurrent the mcp1804 internal circuitry monitors the amount of current flowing through the p-channel pass transistor. in the event that the load current reaches the current limiter level of 200 ma (typical), the current limiter circuit will operate and the output voltage will drop. as the output voltage drops, the internal current foldback circuit will further reduce the output voltage causing the output current to decrease. when the output is shorted, a typical output current of 50 ma flows. 4.3 shutdown the shdn input is used to turn the ldo output voltage on and off. when the shdn input is at a logic-high level, the ldo output voltage is enabled. when the shdn input is pulled to a logic-low level, the ldo output voltage is disabled and the ldo enters a low quiescent current shutdown state where the typical quiescent current is 0.01 a. the shdn pin does not have an internal pullup or pulldown resistor. therefore the shdn pin must be pulled either high or low to prevent the device from becoming unstable. the internal device current will increase when the device is operational and current flows through the pullup or pull-down resistor to the shdn pin internal logic. the shdn pin internal logic is equivalent to an inverter input. 4.4 output capacitor the mcp1804 requires a minimum output capacitance of 0.1 f to 1.0 f for output voltage stability. ceramic capacitors are recommended because of their size, cost and environmental robustness qualities. aluminum-electrolytic and tantalum capacitors can be used on the ldo output as well. the output capacitor should be located as close to the ldo output as is practical. ceramic materials x7r and x5r have low temperature coefficients. larger ldo output capacitors can be used with the mcp1804 to improve dynamic performance and power supply ripple rejection performance. aluminum- electrolytic capacitors are not recommended for low temperature applications of < -25c. 4.5 input capacitor low input source impedance is necessary for the ldo output to operate properly. when operating from batteries, or in applications with long lead length (> 10 inches) between the input source and the ldo, some input capacitance is recommended. a minimum of 0.1 f to 1.0 f is recommended for most applications. for applications that have output step load requirements, the input capacitance of the ldo is very important. the input capacitance provides the ldo with a good local low-impedance source to pull the transient currents from in order to respond quickly to the output load step. for good step response performance, the input capacitor should be of equivalent or higher value than the output capacitor. the capacitor should be placed as close to the input of the ldo as is practical. larger input capacitors will also help reduce any high-frequency noise on the input and output of the ldo and reduce the effects of any inductance that exists between the input source voltage and the input capacitance of the ldo. 4.6 thermal shutdown the mcp1804 thermal shutdown circuitry protects the device when the internal junction temperature reaches the typical thermal limit value of +150c. the thermal limit shuts off the output drive transistor. device output will resume when the internal junction temperature falls below the thermal limit value by an amount equal to the thermal limit hysteresis value of +25c.
mcp1804 ds22200c-page 18 ? 2011 microchip technology inc. figure 4-1: block diagram. thermal + - v in v out gnd error amplifier voltage reference current limiter shutdown control shdn protection 5-pin versions only * *
? 2011 microchip technology inc. ds22200c-page 19 mcp1804 5.0 functional description the mcp1804 cmos linear regulator is intended for applications that need the low current consumption while maintaining output voltage regulation. the operating continuous load range of the mcp1804 is from 0 ma to 150 ma. the input operating voltage range is from 2.0v to 28.0v, making it capable of operating from a single 12v battery or single and multiple li-ion cell batteries. 5.1 input the input of the mcp1804 is connected to the source of the p-channel pmos pass transistor. as with all ldo circuits, a relatively low source impedance (< 10 ) is needed to prevent the input impedance from causing the ldo to become unstable. the size and type of the capacitor needed depends heavily on the input source type (battery, power supply) and the output current range of the application. for most applications a 0.1 f ceramic capacitor will be sufficient to ensure circuit stability. larger values can be used to improve circuit ac performance. 5.2 output the maximum rated continuous output current for the mcp1804 is 150 ma. a minimum output capacitance of 0.1 f to 1.0 f is required for small signal stability in applications that have up to 150 ma output current capability. the capacitor type can be ceramic, tantalum or aluminum electrolytic.
mcp1804 ds22200c-page 20 ? 2011 microchip technology inc. 6.0 application circuits and issues 6.1 typical application the mcp1804 is most commonly used as a voltage regulator. it?s low quiescent current and wide input volt- age make it ideal for li-ion and 12v battery-powered applications. figure 6-1: typical application circuit. 6.1.1 application input conditions 6.2 power calculations 6.2.1 power dissipation the internal power dissipation of the mcp1804 is a function of input voltage, output voltage and output current. the power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (50.0 a x v in ). the following equation can be used to calculate the internal power dissipation of the ldo. equation 6-1: the maximum continuous operating temperature specified for the mcp1804 is +85 c . to estimate the internal junction temperature of the mcp1804, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (r ja ). the thermal resistance from junction to ambient for the sot-23 pin package is estimated at 256 c/w. equation 6-2: the maximum power dissipation capability for a package can be calculated given the junction- to-ambient thermal resistance and the maximum ambient temperature for the application. the following equation can be used to determine the package maximum internal power dissipation. equation 6-3: equation 6-4: equation 6-5: package type = sot-23 input voltage range = 3.8v to 4.2v v in maximum = 4.6v v out typical = 1.8v i out = 50 ma maximum gnd v out v in c in 1f c out 1f ceramic v out v in 4.2v 1.8v i out 50 ma ceramic shdn nc mcp1804 p ldo v in max ) () v out min () ? () i out max ) () = where: p ldo = ldo pass device internal power dissipation v in(max) = maximum input voltage v out(min) = ldo minimum output voltage t jmax () p total r ja t amax + = where: t j(max) = maximum continuous junction temperature. p total = total device power dissipation. r ? ja = thermal resistance from junction to ambient. t amax = maximum ambient temperature. p dmax () t jmax () t amax () ? () r ja --------------------------------------------------- = where: p d(max) = maximum device power dissipation. t j(max) = maximum continuous junction temperature. t a(max) = maximum ambient temperature. r ? ja = thermal resistance from junction to ambient. t jrise () p dmax () r ja = where: t j(rise) = rise in device juncti on temperature over the ambient temperature. p d(max) = maximum device power dissipation. r ? ja = thermal resistance from junction to ambient. t j t jrise () t a + = where: t j = junction temperature. t j(rise) = rise in device juncti on temperature over the ambient temperature. t a = ambient temperature.
? 2011 microchip technology inc. ds22200c-page 21 mcp1804 6.3 voltage regulator internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. the power dissipation, as a result of ground current, is small enough to be neglected. 6.3.1 power dissipation example 6.3.1.1 device junction temperature rise the internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. the thermal resistance from junction to ambient (r ja ) is derived from an eia/jedec standard for measuring thermal resistance for small surface mount packages. the eia/ jedec specification is jesd51-7, ?high effective ther- mal conductivity test board for leaded surface mount packages?. the standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. the actual thermal resistance for a particular application can vary depend- ing on many factors, such as copper area and thick- ness. refer to an792, ?a method to determine how much power a sot23 can dissipate in an application? (ds00792), for more information regarding this subject. 6.3.1.2 junction temperature estimate to estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. for this example, the worst-case junction temperature is estimated below. maximum package power dissipation at +25c ambient temperature (minimum pcb footprint) 6.4 voltage reference the mcp1804 can be used not only as a regulator, but also as a low quiescent current voltage reference. in many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. when the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the mcp1804 ldo. the low-cost, low quiescent current and small ceramic output capacitor are all advantages when using the mcp1804 as a voltage reference. figure 6-2: using the mcp1804 as a voltage reference. 6.5 pulsed load applications for some applications, there are pulsed load current events that may exceed the specified 150 ma maximum specification of the mcp1804. the internal current limit of the mcp1804 will prevent high peak load demands from causing non-recoverable damage. the 150 ma rating is a maximum average continuous rating. as long as the average current does not exceed 150 ma nor the max power dissipation of the packaged device, pulsed higher load currents can be applied to the mcp1804 . the typical current limit for the mcp1804 is 200 ma (t a = +25c). package: package type = sot-23 input voltage: v in = 3.8v to 4.6v ldo output voltages and currents: v out = 1.8v i out =50ma maximum ambient temperature: t a(max) =+40c internal power dissipation: internal power dissipation is the product of the ldo output current times the voltage across the ldo (v in to v out ). p ldo(max) =(v in(max) - v out(min) ) x i out(max) p ldo = (4.6v - (0.98 x 1.8v)) x 50 ma p ldo = 141.8 milli-watts t j(rise) =p total x rq ja t jrise = 141.8 milli-watts x 256.0 c/watt t jrise =36.3 c t j =t jrise + t a(max) t j = 76.3c sot-23 (256c/watt = r ja ): p d(max) = (85c - 25c) / 256c/w p d(max) = 234 milli-watts sot-89 (180c/watt = r ja ): p d(max) = (85c - 25c) / 180c/w p d(max) = 333 milli-watts picmicro ? gnd v in c in 1f c out 1f bridge sensor v out v ref ado ad1 ratio metric reference 50 a bias microcontroller mcp1804
mcp1804 ds22200c-page 22 ? 2011 microchip technology inc. 7.0 packaging information 7.1 package marking information legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 5-lead sot-89 example: 5-lead sot-23 example: 80k25 xxxxxxx xxxyyww 3-lead sot-223 nnn xxxyyww example: 80k25 part number code mcp1804t-1802i/ot 80knn mcp1804t-2502i/ot 80tnn mcp1804t-3002i/ot 80znn mcp1804t-3302i/ot 812nn mcp1804t-5002i/ot 81mnn mcp1804t-a002i/ot 839nn mcp1804t-c002i/ot 83znn part number code mcp1804t-1802i/mt 80knn mcp1804t-2502i/mt 80tnn mcp1804t-3002i/mt 80znn mcp1804t-3302i/mt 812nn mcp1804t-5002i/mt 81mnn mcp1804t-a002i/mt 839nn mcp1804t-c002i/mt 83znn part number code mcp1804t-1802i/db 84knn mcp1804t-2502i/db 84tnn mcp1804t-3002i/db 84znn mcp1804t-3302i/db 852nn mcp1804t-5002i/db 85mnn mcp1804t-a002i/db 879nn mcp1804t-c002i/db 87znn 3-lead sot-89 example: nnn xxxyyww 84k25 part number code mcp1804t-1802i/mb 84knn mcp1804t-2502i/mb 84tnn mcp1804t-3002i/mb 84znn mcp1804t-3302i/mb 852nn mcp1804t-5002i/mb 85mnn mcp1804t-a002i/mb 879nn mcp1804t-c002i/mb 87znn 84k25 nnn xxnn
? 2011 microchip technology inc. ds22200c-page 23 mcp1804 
 

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mcp1804 ds22200c-page 28 ? 2011 microchip technology inc. notes:
? 2011 microchip technology inc. ds22200c-page 29 mcp1804 appendix a: revision history revision c (june 2011) the following is the list of modifications: 1. added seven new characterization graphs to section 2.0 ?typical performance curves? ( figure 2-49 - figure 2-55 ). 2. changed layout of table 3-1 . added separate column for sot-223-3. 3. updated package marking drawings and examples in the packaging information section. 4. added new voltage option to product identification system table. revision b (november 2009) the following is the list of modifications: ? electrical characteristics, shdn ?h? voltage item: changed to shdn ?l? voltage. revision a (september 2009) ? original release of this document.
? 2011 microchip technology inc. ds22200c-page 30 mcp1804 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . part no. x /x x -x x voltage package temperature range device device mcp1804t: ldo voltage regulator (tape and reel) voltage options 18 = 1.8v 25 = 2.5v 30 = 3.0v 33 = 3.3v 50 = 5.0v a0 = 10v c0 = 12v j0 = 18v output voltage tolerance 02 = 2% temperature range i = -40 c to +85 c (industrial) package db = 3-lead plastic small outlinetransistor (sot-223) mb = 3-lead plastic small outlinetransistor (sot-89) mt = 5-lead plastic small outlinetransistor (sot-89) ot = 5-lead plastic small outlinetransistor (sot-23) examples: a) mcp1804t-1802i/ot: 1.8v, 5-ld sot-23 b) mcp1804t-2502i/ot: 2.5v, 5-ld sot-23 c) mcp1804t-3002i/ot: 3.0v, 5-ld sot-23 d) mcp1804t-3302i/ot: 3.3v, 5-ld sot-23 e) mcp1804t-5002i/ot: 5.0v, 5-ld sot-23 f) mcp1804t-a002i/ot: 10v, 5-ld sot-23 g) mcp1804t-c002i/ot: 12v, 5-ld sot-23 a) mcp1804t-1802i/mb: 1.8v, 5-ld sot-89 b) mcp1804t-2502i/mb: 2.5v, 5-ld sot-89 c) mcp1804t-3002i/mb: 3.0v, 5-ld sot-89 d) mcp1804t-3302i/mb: 3.3v, 5-ld sot-89 e) mcp1804t-5002i/mb: 5.0v, 5-ld sot-89 f) mcp1804t-a002i/mb: 10v, 5-ld sot-89 g) mcp1804t-c002i/mb: 12v, 5-ld sot-89 a) mcp1804t-1802i/mt: 1.8v, 5-ld sot-89 b) mcp1804t-2502i/mt: 2.5v, 5-ld sot-89 c) mcp1804t-3002i/mt: 3.0v, 5-ld sot-89 d) mcp1804t-3302i/mt: 3.3v, 5-ld sot-89 e) mcp1804t-5002i/mt: 5.0v, 5-ld sot-89 f) mcp1804t-a002i/mt: 10v, 5-ld sot-89 g) mcp1804t-c002i/mt: 12v, 5-ld sot-89 a) mcp1804t-1802i/db: 1.8v, 3-ld sot-223 b) mcp1804t-2502i/db: 2.5v, 3-ld sot-223 c) mcp1804t-3002i/db: 3.0v, 3-ld sot-223 d) mcp1804t-3302i/db: 3.3v, 3-ld sot-223 e) mcp1804t-5002i/db: 5.0v, 3-ld sot-223 f) mcp1804t-a002i/db: 10v, 3-ld sot-223 g) mcp1804t-c002i/db: 12v, 3-ld sot-223 t ta pe and reel x x output voltage tolerance
? 2011 microchip technology inc. ds22200ca-page 31 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mxdev, mxlab, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, app lication maestro, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, total endurance, tsharc, uniwindriver, wiperlock and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2011, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 978-1-61341-301-2 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified.
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