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| dual enhancement mode mosfet (n- and p-channel) c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 2 7 0 4 c g f e a t u r e s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n n - c h a n n e l 2 0 v / 4 a , r d s ( o n ) = 3 0 m w ( t y p . ) @ v g s = 4 . 5 v r d s ( o n ) = 4 0 m w ( t y p . ) @ v g s = 2 . 5 v r d s ( o n ) = 6 7 m w ( t y p . ) @ v g s = 1 . 8 v p - c h a n n e l - 2 0 v / - 3 a , r d s ( o n ) = 5 6 m w ( t y p . ) @ v g s = - 4 . 5 v r d s ( o n ) = 8 5 m w ( t y p . ) @ v g s = - 2 . 5 v r d s ( o n ) = 1 3 5 m w ( t y p . ) @ v g s = - 1 . 8 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) a p p l i c a t i o n s p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , p o r t a b l e e q u i p m e n t a n d b a t t e r y p o w e r e d s y s t e m s t o p v i e w o f j s o t - 6 n - c h a n n e l m o s f e t p - c h a n n e l m o s f e t 1 2 3 4 5 6 n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . apm2704 handling code temperature range package code package code cg : jsot-6 operating junction temperature range c : -55 to 150 o c handling code tr : tape & reel assembly material g : halogen and lead free device apm2704 cg : m2704 xxxxx xxxxx - date code assembly material (1)g1 (5)s1 (6)d1 (3)g2 (2)s2 (4)d2
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 2 a p m 2 7 0 4 c g a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) rating symbol parameter n channel p channel unit v dss drain - source voltage 20 - 20 v gss gate - source voltage 10 10 v i d * continuous drain current 4 - 3 i dm * pulsed drain current v gs = 4.5 v (n) v gs = - 4.5 v (p) 15 - 10 a i s * diode continuous forward cu rrent 1 - 0.6 a t j maximum junction temperature 150 t stg storage temperature range - 55 to 150 c t a =25 c 1 p d * power dissipation t a =100 c 0.4 w r q ja * thermal resistance - junction to ambient 125 c / w note : *surface mounted on 1in 2 pad area, t 10sec. apm 2704cg symbol parameter test condition s min. typ. max. unit static characteristics v gs =0v, i ds =250 m a n - ch 20 - - bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a p - ch - 20 - - v v ds = 16 v, v gs =0v - - 1 t j =85 c n - ch - - 30 v ds = - 16 v, v gs =0v - - - 1 i dss zero gate voltage drain current t j =85 c p - ch - - - 30 m a v ds =v gs , i ds =250 m a n - ch 0.5 0.75 1 v gs(th) gate threshold voltage v ds =v gs , i ds = - 250 m a p - ch - 0.5 - 0.75 - 1 v v gs =10v, v ds =0v n - ch - - 10 i gss gate leakage current v gs =10v, v ds =0v p - ch - - 10 m a i sd = 1 a , v gs =0v n - ch - 0.6 1.3 v sd a diode forward voltage i sd = - 0.6 a, v gs =0v p - ch - - 0.6 - 1.3 v c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 3 a p m 2 7 0 4 c g apm 2704cg symbol parameter test condition s min. typ. max. unit static characteristics (cont.) v gs = 4.5 v, i ds = 4 a n - ch - 30 38 v gs = - 4.5 v, i ds = - 3 a p - ch - 56 70 v gs = 2.5 v, i ds = 2.5 a n - ch - 40 55 v gs = - 2.5 v, i ds = - 1 .5 a p - ch - 85 115 v gs =1 .8 v, i ds = 1.5 a n - ch - 67 105 r ds(on) a drain - source on - s tate resistance v gs = - 1 .8 v, i ds = - 1a p - ch - 135 200 m w dynamic characteristics b n - ch - 5 - r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz p - ch - 10 - w n - ch - 600 - c iss input capacitance p - ch - 790 - n - ch - 110 - c oss output capacitance p - ch - 110 - n - ch - 80 - c rss reverse transfer capacitance n - channel v gs =0v, v ds =10v, f requency =1.0mhz p - channel v gs =0v, v ds = - 10v, f requency =1.0mhz p - ch - 80 - pf n - ch - 12 23 t d(on) turn - on delay time p - ch - 10 19 n - ch - 30 55 t r turn - on rise time p - ch - 26 48 n - ch - 38 69 t d(off) turn - off delay time p - ch - 50 91 n - ch - 6 12 t f t urn - off fall time n - channel v dd = 10 v, r l = 10 w , i d s = 1 a, v gen = 4.5v , r g = 6 w p - channel v dd = - 10 v, r l = 10 w , i d s = - 1 a, v gen = - 4.5v , r g = 6 w p - ch - 45 82 ns n - ch - 21 - t rr reverse recovery time p - ch - 25 - ns n - ch - 10 - q rr reverse recovery charge n - channel i d s = 4 a, dl sd /dt = 100a/ m s p - channel i d s = - 3 a, dl sd /dt = 100a/ m s p - ch - 7 - nc e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 4 a p m 2 7 0 4 c g apm 2704cg symbol parameter test condition s min. typ. max. unit gate charge characteristics b n - ch - 10 14 q g total gate charge p - ch - 8 11 n - ch - 1.2 - q gs gate - source charge p - ch - 1.3 - n - ch - 3 - q gd gate - drain charge n - channel v ds = 10 v, v gs = 4.5 v, i d s = 4 a p - channel v ds = - 10 v, v gs = - 4.5 v, i d s = - 3 a p - ch - 2.7 - nc note a : pulse test ; pulse width 3 00 m s, duty cycle 2% . note b : guaranteed by design, not subject to production testing . e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 5 a p m 2 7 0 4 c g t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) n - c h a n n e l normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 125 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0.01 0.1 1 10 100 0.02 0.1 1 10 30 rds(on) limit t a =25 o c 10ms 300 m s 1ms 100ms dc c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 6 a p m 2 7 0 4 c g r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s d r a i n - s o u r c e o n r e s i s t a n c e v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 2v 1.5v v gs = 2.5,3,4,5,6,7,8,9,10 v 0 3 6 9 12 15 10 20 30 40 50 60 70 80 90 100 110 120 v gs =1.8v v gs =2.5v v gs =4.5v 0 1 2 3 4 5 6 7 8 9 10 10 20 30 40 50 60 70 80 i ds =4a n - c h a n n e l c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 7 a p m 2 7 0 4 c g v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 30m w v gs = 4.5v i ds = 4a 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 t j =150 o c t j =25 o c 0 4 8 12 16 20 0 100 200 300 400 500 600 700 800 900 1000 frequency=1mhz crss coss ciss 0 4 8 12 16 20 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i ds =4a n - c h a n n e l c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 8 a p m 2 7 0 4 c g -i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a - v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) p - c h a n n e l normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 125 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0.01 0.1 1 10 100 0.01 0.1 1 10 30 rds(on) limit t a =25 o c 10ms 300 m s 1ms 100ms dc t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 9 a p m 2 7 0 4 c g r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e - i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e - v d s - d r a i n - s o u r c e v o l t a g e ( v ) -i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s d r a i n - s o u r c e o n r e s i s t a n c e - v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =-250 m a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 8 9 10 -2v -1.5v v gs =-2.5,-3,-4,-5,-6,-7,-8-, -10v 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 180 200 v gs = -1.8v v gs = -2.5v v gs = -4.5v 0 1 2 3 4 5 6 7 8 9 10 20 40 60 80 100 120 140 i ds =-3a p - c h a n n e l c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 0 a p m 2 7 0 4 c g - v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (nc) - v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d -i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) -v gs - gate - source voltage (v) t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 r on @t j =25 o c: 56m w v gs = -4.5v i ds = -3a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 t j =150 o c t j =25 o c 0 4 8 12 16 20 0 100 200 300 400 500 600 700 800 900 1000 1100 frequency=1mhz crss coss ciss 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 8 9 10 v ds = -10v i ds = -3a p - c h a n n e l c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 1 a p m 2 7 0 4 c g p a c k a g e i n f o r m a t i o n j s o t - 6 c e l k s y m b o l min. max. 1.10 0.01 0.25 0.40 0.10 0.20 2.95 3.10 2.50 3.00 2.30 0.30 0.60 a a1 b c d e e1 e2 e l millimeters a2 0.92 1.00 0.95 bsc jsot-6 2.65 3.05 min. max. inches 0.043 0.000 0.037 bsc 0.036 0.039 0.010 0.016 0.004 0.008 0.116 0.122 0.098 0.118 0.091 0.104 0.120 0.012 0.024 0.93 0.037 0.10 0.004 2.50 0.098 0 0 8 0 8 d e 1 e 2 e b a 2 a a 1 note : 1. follow gem 2928 6j. 2. dimension d, d1, and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed 10 mil. c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 2 a p m 2 7 0 4 c g c a r r i e r t a p e & r e e l d i m e n s i o n s a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 h t1 a d application a h t1 c d d w e1 f 178.0 ? 2.00 50 min. 8.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 8.0 ? 0.30 1.75 ? 0.10 3.5 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 jsot - 6 4.0 ? 0.10 4.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.0 min. 0.6+0.00 - 0.40 3.20 ? 0.20 3.10 ? 0.20 1.50 ? 0.20 (mm) d e v i c e s p e r u n i t package type unit quantity jsot - 6 tape & reel 3000 c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 3 a p m 2 7 0 4 c g t a p i n g d i r e c t i o n i n f o r m a t i o n j s o t - 6 r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p r e l i a b i l i t y t e s t p r o g r a m test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b, a102 168 hrs, 100 % rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles user direction of feed xxxxx xxxxx maaaa xxxxx maaaa xxxxx maaaa xxxxx maaaa xxxxx maaaa xxxxx maaaa maaaa c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 4 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 4 a p m 2 7 0 4 c g profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. c l a s s i f i c a t i o n r e f l o w p r o f i l e s table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838 |
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