? semiconductor components industries, llc, 2003 march, 2003 - rev. 0 1 publication order number: nsd914xv2t1/d nsd914xv2t1 preferred device high-speed switching diode ? high-speed switching applications ? lead finish: 100% matte sn (tin) ? qualified maximum reflow temperature: 260 c ? extremely small sod-523 package maximum ratings (t a = 25 c) rating symbol max unit reverse voltage v r 100 v forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr- 5 board (note 1) t a = 25 c derate above 25 c p d 120 1.57 mw mw/ c thermal resistance junction-to-ambient r ja tbd c/w junction and storage temperature t j , t stg 150 c 1. fr-4 @ minimum pad characteristic symbol min max unit off characteristics reverse breakdown voltage (i br = 100 adc) v (br) 100 - vdc reverse voltage leakage current (v r = 20 vdc) (v r = 75 vdc) v f - - 25 5.0 nadc adc diode capacitance (v r = 0, f = 1.0 mhz) c t - 4.0 pf forward recovery voltage (i f = 10 madc) v fr - 1.0 vdc reverse recovery time (i f = i r = 10 madc) t rr - 4.0 ns http://onsemi.com preferred devices are recommended choices for future use and best overall value. 1 cathode 2 anode sod-523 case 502 plastic 5d = specific device code d = date code marking diagram device package shipping ordering information nsd914xv2t1 sod-523 4 mm pitch 3000/tape & reel xx d
nsd914xv2t1 http://onsemi.com 2 notes: 1. a 2.0 k w variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 w 0.1 m f dut v r 100 m h 0.1 m f 50 w output pulse generator 50 w input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit figure 2. forward voltage v f , forward voltage (volts) 1.0 10 100 0.1 figure 3. leakage current v r , reverse voltage (volts) 10 0 i 1.0 0.1 0.001 0.01 10 20 30 40 50 i 1.0 1.2 0.2 0.4 0.6 0.8 figure 4. capacitance v r , reverse voltage (volts) 0 c 0.68 0.64 0.60 0.52 0.56 2.0 4.0 6.0 8.0 , forward current (ma) f t a = 85 c t a = -40 c t a = 25 c , reverse current ( a) r , diode capacitance (pf) d t a = 25 c t a = 55 c t a = 85 c t a = 150 c t a = 125 c
nsd914xv2t1 http://onsemi.com 3 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. -t- seating plane b a -x- -y- d 2 pl t m 0.08 (0.003) x y c s j k dim min nom max millimeters a 1.10 1.20 1.30 b 0.70 0.80 0.90 c 0.50 0.60 0.70 d 0.25 0.30 0.35 j 0.07 0.14 0.20 k 0.15 0.20 0.25 s 1.50 1.60 1.70 0.043 0.047 0.051 0.028 0.032 0.035 0.020 0.024 0.028 0.010 0.012 0.014 0.0028 0.0055 0.0079 0.006 0.008 0.010 0.059 0.063 0.067 min nom max inches sod-523 case 502-01 issue o
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