part number NEZ3436-30E package outline t-79 symbols characteristics units min typ max test conditions p 1db power out at 1 db compression dbm 44.0 45.0 v ds = 10 v g l linear gain db 9.0 10.0 f = 3.4 & 3.6 ghz add power-added efficiency @ 1 db compression % 31 37 i dsq = 6.0 a i ds rf drain source current at 1 db compression a 7.4 r g = 10 ? 2 im 3 3rd order intermodulation distortion 1 dbc -45 -40 1 p out = 33 dbm/tone i dss saturated drain current a 15 v ds = 2.5 v; v gs = 0 v v p pinch-off voltage v -4.0 -2.6 v ds = 2.5 v; i ds = 84 ma g m transconductance ms 8 v ds = 2.5 v; i ds = 84 ma r th thermal resistance channel to case k/w 1.3 1.5 t case = 25 ?c, 10 v, 6.0 a features high output power: 30 w low distortion: -45 dbc im 3 (@33 dbm scl) (verified by a wafer qual test) high linear gain: 10.0 db efficient linear operation: 6 a i dsq wideband operation: rf measurements at both 3.4 & 3.6 ghz internally matched to 50 ? s-band internally matched power gaas mesfet NEZ3436-30E electrical performance (t case = 40 c; t a = 25?c) outline dimensions (units in mm) package outline t-79 functional characteristics electrical dc characteristics 17.4 0.2 8.0 0.15 1.0 0.1 20.4 0.15 24 0.2 r1.2 0.08 , 4 places 0.1 2.41 0.15 1.78 0.15 4.5 max drain gate source 4.7 0.15 13.4 0.2 description the NEZ3436-30E is a 30 w internally matched gaas mesfet designed for high power transmitter applications for wireless local loop. the internal matching network provides matching to 50 ? over the 3.4 to 3.6 ghz band, and with external matching, the high end frequency can be increased to over 3.7 ghz. the device contains two chips which employ 0.9 m tungsten silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal charac- teristics and reliability. this device is designed to be mass produced for low cost commercial applications. note: 1. two-tone im 3 is measured as part of wafer qualification tests on a sample basis. test criteria are set to ensure a maximum im 3 of -40 dbc with a confidence factor of 90%. 2. r g is the equivalent series resistance between the gate supply and the fet gate. california eastern laboratories
symbols parameters units ratings v dso drain to source voltage v 15 v gdo gate to drain voltage v -18 v gs gate to source voltage v -7 i ds drain current a 27 i gs gate current ma 180 p t total power dissipation w 100 t ch channel temperature c 175 t stg storage temperature c -65 to +175 symbols parameters units min typ max v ds drain to source voltage v 10.0 10.0 t flange 1 flange temperature ?c 62 g comp gain compression db 3.0 r g 2 gate resistance ? 10 i dsq drain current (rf off) a 6.0 recommended operating limits (recommended operating conditions for reliable operation, i.e. > 10 6 hrs mttf) notes: 1. operation in excess of any one of these parameters may result in permanent damage. notes: 1. calculation of maximum flange temperature is based on worst case conditions, that is, maximum r th @ 62?c flange (1.66) and maximum power dissipation with no rf output. operation at higher flange temperature may result in a lower mttf. 2. r g is the series resistance between the gate supply and the fet gate. absolute maximum ratings 1 (t case = 25 c unless otherwise noted) typical performance curves (t c = 25 c) output power (dbm) output power (dbm) gate current (ma) input power (dbm) output power (dbm) power added efficiency (%) input power (dbm) two tone output power (dbm) third order intermodulation distortion, im3 (dbc) output power, drain and gate currents vs. input power output power and gain vs. frequency intermodulation distortion vs. output power output power, gain and power added efficiency vs. input power frequency (ghz) 48.00 47.00 46.00 45.00 44.00 43.00 42.00 41.00 40.00 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 12.00 11.50 11.00 10.50 10.00 9.50 9.00 8.50 8.00 p1db output power compressed gain v ds = 10 v, i dsq = 6 a 60.00 50.00 40.00 30.00 20.00 10.00 0.00 -10.00 -20.00 20 22 24 26 28 30 32 34 36 38 40 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 output power gate current drain current v ds = 10 v, i dsq = 6 a, f = 3.6 ghz 60.00 50.00 30.00 10.00 20.00 40.00 0.00 20 22 24 26 28 30 32 34 36 38 40 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 output power added efficiency gain v ds = 10 v, i dsq = 6 a, f = 3.6 ghz -20.00 -30.00 -40.00 -50.00 -60.00 -70.00 -80.00 -90.00 -100.00 25 27 29 31 33 35 37 39 41 43 45 -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 im 3 , i dsq = 6 a im 3 , i dsq = 5 a im 3 , i dsq = 4 a im 3 , i dsq = 3 a im 3 , i dsq = 2 a gain at p1db (db) NEZ3436-30E drain current (a) gain (db)
note: 1. gain calculations: mag = maximum available gain msg = maximum stable gain 1.50 0.960 148.5 0.463 -9.1 0.004 -51.0 0.873 135.4 11.52 4.03 2.00 0.940 132.1 0.637 -51.8 0.007 -102.2 0.747 110.1 9.51 5.21 2.50 0.931 111.5 1.114 -108.1 0.016 -166.8 0.562 58.3 11.59 2.56 3.00 0.816 66.7 2.068 172.2 0.037 109.0 0.370 -43.5 11.79 2.00 3.05 0.786 59.6 2.184 161.5 0.040 99.7 0.376 -55.8 11.69 1.98 3.10 0.748 50.2 2.287 150.4 0.043 89.8 0.399 -68.7 11.57 1.97 3.15 0.733 42.3 2.469 141.7 0.047 79.1 0.397 -76.9 12.00 1.80 3.20 0.683 32.5 2.636 132.2 0.051 68.8 0.416 -87.6 12.03 1.77 3.25 0.633 19.9 2.752 120.0 0.055 57.7 0.425 -96.3 11.90 1.76 3.30 0.586 6.9 2.850 107.7 0.059 45.8 0.393 -106.8 11.66 1.81 3.35 0.529 -8.7 3.023 97.5 0.062 34.0 0.412 -114.3 11.86 1.74 3.40 0.482 -27.3 3.137 85.6 0.066 21.8 0.396 -122.2 11.86 1.71 3.45 0.447 -48.7 3.199 72.0 0.070 9.0 0.384 -129.8 11.83 1.67 3.50 0.430 -71.8 3.233 59.0 0.071 -3.6 0.356 -135.4 11.76 1.68 3.55 0.434 -96.6 3.260 46.7 0.073 -16.7 0.340 -140.9 11.84 1.62 3.60 0.463 -117.5 3.280 34.4 0.074 -29.5 0.311 -141.0 11.92 1.59 3.65 0.489 -137.1 3.171 21.3 0.073 -41.7 0.292 -143.7 11.69 1.63 3.70 0.524 -158.0 3.050 8.1 0.072 -53.9 0.278 -137.4 11.45 1.67 3.75 0.570 -173.7 2.952 -3.0 0.072 -65.2 0.251 -134.2 11.36 1.67 3.80 0.601 173.1 2.850 -13.7 0.069 -76.4 0.267 -130.7 11.24 1.70 3.85 0.641 159.0 2.716 -25.1 0.068 -87.1 0.249 -124.1 11.07 1.73 3.90 0.668 147.4 2.540 -36.6 0.065 -97.1 0.270 -126.0 10.74 1.80 3.95 0.670 137.7 2.413 -46.8 0.063 -107.0 0.308 -121.9 10.32 1.92 4.00 0.692 129.3 2.312 -55.4 0.061 -116.2 0.322 -124.1 10.20 1.94 typical scattering parameters (t a = 25 c) NEZ3436-30E v ds = 10.0 v, i dsq = 6 a frequency s 11 s 21 s 12 s 22 kmag 1 ghz mag ang mag ang mag ang mag ang (db) NEZ3436-30E s 22 4.0 ghz s 11 4.0 ghz s 22 1.5 ghz j50 j100 -j100 -j50 -j25 -j10 j10 0 j25 25 50 100 s 11 1.5 ghz +90 ? +120 ? +150 ? +180 ? -150 ? -120 ? -90 ? -60 ? -30 ? 0 +30 +60 s 12 1.5 ghz s 12 4.0 ghz s 21 4.0 ghz s 21 1.5 ghz mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , coordinates in ohms frequency in ghz (v ds = 10 v, i dsq = 6 a) note: this file and many other s-parameter files can be downloaded from www.cel.com
exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories headquarters 4590 patrick henry drive santa clara, ca 95054-1817 (408) 988-3500 telex 34-6393 fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) internet: http://www.cel.com 11/99 data subject to change without notice NEZ3436-30E test fixture assembly NEZ3436-30E out er = 2.2 t = .031 500372 10 ? 1.3pf 1.4pf 10uf 0.1uf 10pf 100pf 1000pf 10uf gnd NEZ3436-30E in er = 2.2 t = .031 500371 2 31 4 5 7 6 gnd v d v g 10pf 100pf 1000pf 0.1uf item no. specification / material 1 test fixture block 2 NEZ3436-30E output circuit 3 NEZ3436-30E input circuit 4 osm connector flange 5 osm connector macom 6 m4 x 0.7-6h x 8.0 hex hd screw 7 m2 x 0.4-6h x 4.0 hex hd screw
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