dt a1 13tka t r ansistors rev . b 1/2 -100ma / -50v digit a l transistor (with built-in resistor) dt a1 13tka z a pplic a t ions inverter , interface, driver z f eatu r es 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors. 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t, and p a rasitic ef fect s are almost completely eliminated. 3) o n ly the on / of f cond i t io n s ne ed to be se t for op eratio n , making the device design easy . 4) higher mounting densit ies can be achieved. z s t ru ctu r e pnp epit a xial planar silicon transistor (resistor built-in ty pe) z packag in g sp ecificatio n s dta113tka smt3 taping t146 3000 part no. package packaging type code basic ordering unit (pieces) z ex te r n a l dime ns ions (unit : mm) each lead has same dimension abbreviated symbol : 91 smt3 (1)emitter (2)base (3)collector ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 z equiv a le nt c i r c uit c b r 1 =1k ? e r 1 e : emitter c : collector b : base z a b so lu te maximu m ratin g s (t a= 25 c) parameter symbol v cbo v ceo v ebo i c pc tj tstg limits ? 50 ? 50 ? 5 to + 10 ? 100 200 150 ? 55 to + 150 unit v v v ma mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature
dt a1 13tka t r ansistors rev . b 2/2 z electrical ch aracteristics (t a= 25 c) parameter symbol min. typ. max. unit conditions r 1 0.7 1 1.3 k ? bv cbo ? 50 ?? v bv ceo ? 50 ?? v bv ebo ? 5 ?? v i cbo ?? ? 0.5 a i ebo ?? ? 0.5 a v ce(sat) ? ? ? 0.3 v h fe 100 250 600 ? f t ? 250 ? mhz ? ? i c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 50v v eb = ? 4v i c / i b = ? 5ma / ? 0.25ma i c = ? 1ma , v ce = ? 5v v cb = ? 10v , i e = 5ma , f = 100mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency input resistance ? characteristics of built-in transistor z electrical ch aracteristics cu rv es 1k 100 200 500 10 20 50 1 2 5 ? 100 ? 200 ? 500 ? 1m ? 2m ? 5m ? 10m ? 20m ? 50m ? 100m v ce = ? 5v fig.1 dc current gain vs. collector current dc current gain : h fe collector current : i c (a) ta = 100 c 25 c ? 40 c ? 1m ? 100m ? 200m ? 500m ? 10m ? 20m ? 50m ? 1m ? 2m ? 5m ? 100 ? 200 ? 500 ? 1m ? 2m ? 5m ? 10m ? 20m ? 50m ? 100m i c /i b = 20 fig.2 collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta = 100 c 25 c ? 40 c
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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