specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage conditi on (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 92811 sy 20110922-s00001/80509 sy / 92706 / 62005 ms pc no.8348-1/8 LA6586T overview the LA6586T is single-phase bipolar fan motor is put into silent driving by means of btl output linear drive, offering high efficiency and power saving by suppressing the reactive current. lock protection and rotation signal (fg, rd) circuits are built in, ensuring optimum application to small fans for notebook pc, consumer equipment power supply, car audio system, cpu cooler, etc. that require high reliability and low noise. functions ? single-phase full-wave linear drive by btl output (gain resistance 1k -360k , 51db) ? low-voltage operation possible, with wide operating voltage range (2.2 to 14.0v) ? low saturation output (upper + lower saturation voltage : vosat (total)=1.2vtyp, i o =200ma) ? built-in lock protection and automatic reset circuits ? built-in fg&rd outputs ? built-in hall bias (vhb=1.3v) ? thermal protection circuit ? extra-small p ackage (msop10) specitications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit output voltage v cc max 15 v allowable power dissipation pd max mounted on a specified board* 400 mw output current i out max 0.6 a output withstand voltage v out max 15 v rd/fg output pin output withstand voltage vrd/fg max 15 v rd/fg output current ird/fg max 10 ma hb output current ib max 10 ma operating temperature topr -30 to +90 c storage temperature tstg -55 to +150 c continued on next page. ordering number : enn8348b monolithic linear ic btl driver single-phase full-wave fan motor driver
LA6586T no.8348-2/8 continued from preceding page. *mounted on a specified board : 20mm 10mm 0.8mm, paper phenol caution 1) absolute maximum ratings represent the va lue which cannot be exceeded for any length of time. caution 2) even when the device is used within the range of absolute maximum rati ngs, as a result of continuous usage under hig h temperature, high current, high voltage, or drastic temperature change, the reliabilit y of the ic may be degraded. please contact us for the furt her details. recommended operating range at ta = 25 c parameter symbol conditions ratings unit supply voltage v cc 2.2 to 14.0 v common-phase input voltage range of hall input vicm 0 to v cc -1.5 v electrical characteristics at ta = 25 c, v cc = 5 v parameter symbol conditions ratings unit min typ max circuit current i cc 1 during drive (ct = l) 3 6 9 ma i cc 2 during lock protection (ct = h) 2.5 5 7.5 ma lock detection capacitor charge current ict1 0.9 1.2 1.5 a capacitor discharge current ict2 0.10 0.18 0.25 a capacitor charge and discharge current ratio rct rct = ict1/ict2 5 6.5 8 - ct charge voltage vct1 1.3 1.5 1.7 v ct discharge voltage vc t2 0.3 0.5 0.7 v out output l saturation voltage vol i o = 200 ma 0.25 0.45 v out output h saturation voltage voh i o = 200 ma 0.95 1.2 v input offset voltage vofst 3 6 mv hall input sensitivity vhn zero peak value (including offset and hysteresis) 7 15 mv hall bias output l voltage vhb ihb = 5 ma 1.3 1.5 1.7 v rd/fg input pin l voltage vfg i rd/fg = 5 ma 0.15 0.3 v rd/fg input pin leak current ifgl vrd/fg = 15 v 1 30 a overheat protection circuit tsd (*1) designed target value 150 180 210 c (*1) the standard is a design target and the measurement with a single unit is not made. package dimensions unit : mm 3297 pd max -- ta 0 0.5 0.1 -30 70 30 -10 110 50 0.192 0.4 0.3 10 90 0.2 ambient temperature , ta -- c allowable power dissipation, pd max -- w specified board : 20mm 10mm 0.8mm 3 paper phenol
LA6586T no.8348-3/8 truth table in- in+ ct out1 out2 fg rd mode h l l h l l l during rotation l h l h h - - h off off - h during overheat protection pin assignment test circuit diagram input current (i cc ) LA6586T gnd out1 ct hb in- rd fg in+ v cc out2 top view v in +=3v v in -=4v v cc =12v fg 10 9 8 7 v cc out2 gnd 1 4 5 in+ hb in- 2 3 6 ct out1 rd v ct =0 or 2v a
LA6586T no.8348-4/8 ct pin charge/discharge current (ict) ct pin charge/discharge voltage (vct) out output saturation voltage (v ol , v oh ) v in +=0v v in -=2v v cc =12v fg 10 9 8 7 v cc out2 gnd 1 4 5 in+ hb in- 2 3 6 ct out1 rd v ct =0.2 or 2v a v cc =12v fg 10 9 8 7 v cc out2 gnd 1 4 5 in+ hb in- 2 3 6 ct out1 rd a v in +=2v v v in -=1v v cc =12v fg 10 9 8 7 v cc out2 gnd 1 4 5 in+ hb in- 2 3 6 ct out1 rd v i o i o measure vct at changeover of ict
LA6586T no.8348-5/8 input offset voltage (vofst) hall input sensitivity (vhn) hall bias output voltage (vhb) v in =5v v v cc =15v fg 10 9 8 7 v cc out2 gnd 1 4 5 in+ hb in- 2 3 6 ct out1 rd v v in +=1v v cc =12v fg 10 9 8 7 v cc out2 gnd 1 4 5 in+ hb in- 2 3 6 ct out1 rd v v cc =12v fg 10 9 8 7 v cc out2 gnd 1 4 5 in+ hb in- 2 3 6 ct out1 rd v vofst = (v out -5) /360 *360 is the amplifier gain. measure the input voltage at changeover of fg.
LA6586T no.8348-6/8 fg, rd input pin l voltage (vfg, rd) fg, rd input pin leakage current (ifgl, rdl) v in +=0v v cc =12v fg 10 9 8 7 v cc out2 gnd 1 4 5 in+ hb in- 2 3 6 ct out1 rd v v in -=1v v in +=1v v cc =2.2v fg 10 9 8 7 v cc out2 gnd 1 4 5 in+ hb in- 2 3 6 ct out1 rd v in -=0v v vct=1.8v 15v rfg rrd ifgl, rdl = ( 15-vfg, rd ) /rrd, fg
LA6586T no.8348-7/8 sample application circuit *1 to enhance the reliability, it is necessary to insert a capacitor cr to secure the re generative current route. *2 to obtain hall bias from v cc , carry out 1/2v cc bias as shown in the figure. linear driving is made through voltage control of the coil by amplifying the hall output. when the hall element output is large, the startup performance and efficiency are impr oved. adjustment of the hall elem ent can reduce the noise further. *3 to obtain hall bias from the hb pin, carry out constant-voltage bias at about 1.5 v. which enables the hall element to generate the stable hall output satisfactory in temperature characteristics. the hall output amplitude is adjusted with r1. (in the case of v cc = 12 v, *2 proves advantageous in terms of heat generation in ic.) this applies to the case of mfp-10s. *4 keep this open when not used. *5 when the wiring from the hall output to ic hall input is long, noise may be carried through the wiring. in this case, insert the capacitor as shown in the figure. gnd v cc fg out1 out2 in+ in- hb *1 di cr *2 on board element h r2 r2 h r1 *3 in+ in- hb *5 rd *4 ct
LA6586T no.8348-8/8 internal equivalent circuit ps this catalog provides information as of september, 2011. specifications and information herein are subject to change without notice. h 1.5vrg fg out1 out2 hb v cc in+ in- gnd discharge pulse control circuit charge discharge rd ct=0.1 to 1f 1k 360k sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliab ility pr oducts, however, any and all semiconductor products fail or malfunction with some probab ility. it is possible that these pr obab ilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equip ment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd.
|
