unisonic technologies co., ltd uk1398 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r502-256.f n-channel mosfet for high speed switching ? description the utc uk1398 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitabl e for use as a load switch or in pwm applications. ? features * r ds(on) <22 ? @ v gs =2.5v * r ds(on) <14 ? @ v gs =4v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 3.gate 1.sourc e 2.drai n to-92 sot-23 1 3 2 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UK1398L-AE3-R uk1398g-ae3-r sot-23 s d g tape reel uk1398l-t92-b uk1398g-t92-b to-92 s d g tape box uk1398l-t92-k uk1398g-t92-k to-92 s d g bulk uk1398l-t92-r uk1398g-t92-r to-92 s d g tape reel
uk1398 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-256.f ? absolute maximum ratings (ta = 25 c) parameter symbol ratings unit drain-source voltage v dss 50 v gate-source voltage v gss 7.0 v dc 100 ma continuous drain current pulse(note 2) i d 200 ma sot-23 200 power dissipation to-92 p d 625 mw junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width 10ms, duty cycle 50% ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 50 v drain-source leakage current i dss v ds =50v, v gs =0v 10 a gate-source leakage current i gss v gs =7.0v, v ds =0 v 5.0 a on characteristics v gs(th) v ds =v gs , i d =250a 1.0 3.0 v gate threshold voltage v gs(off) v ds =3.0v, i d =1.0a 0.6 1.2 1.5 v v gs =2.5v, i d =10ma 22 40 ? static drain-source on-resistance r ds(on) v gs =4.0v, i d =10ma 14 20 ? forward transconductance g fs v ds =3.0v, i d =10ma 20 38 ms dynamic parameters input capacitance c iss 8 pf output capacitance c oss 7 pf reverse transfer capacitance c rss v ds =3.0v, v gs =0v, f=1mhz 3 pf switching parameters turn-on delay time t d(on) 15 ns turn-on rise time t r 100 ns turn-off delay time t d(off) 30 ns turn-off fall-time t f v dd =3.0v, i d =20ma, v gs(on) =3.0v, r g =10 ? , r l =150 ? 35 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =1a, v gs =0v 1.3 v
uk1398 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-256.f ? typical characteristics drain current, i d (a) drain current, i d (ma)
uk1398 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-256.f utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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