CMKD6000 surface mount dual pair, in series ultra low leakage silicon switching diodes description: the central semiconductor CMKD6000 consists of two pair of electrically isolated, series configured ultra low leakage switching diodes manufactured by the epitaxial planar process, epoxy molded in a ultramini? sot-363 surface mount package. marking code: ck0 maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 100 v continuous forward current i f 250 ma peak repetitive forward current i frm 500 ma peak forward surge current, tp=1.0s i fsm 4.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =75v 400 500 pa i r v r =5.0, t a =50c 10 100 pa bv r i r =100a 100 120 v v f i f =1.0ma 0.77 0.85 v v f i f =10ma 0.85 0.95 v v f i f =100ma 0.96 1.1 v c t v r =0, f=1.0mhz 1.7 2.0 pf t rr i r =i f =10ma, i rr =1.0ma, r l =100 3.0 s features: ? low total conduction losses applications: ? handheld medical devices ? battery operated equipment ? high speed data line steering sot-363 case r1 (9-may 2011) www.centralsemi.com
CMKD6000 surface mount dual pair, in series ultra low leakage silicon switching diodes sot-363 case - mechanical outline pin configuration lead code: 1) anode d1 2) cathode d2 3) anode d3, cathode d4 4) anode d4 5) cathode d3 6) cathode d1, anode d2 marking code: ck0 www.centralsemi.com r1 (9-may 2011)
|
