parameter symbol typ unit 5P4M5p5m5p6m repetitive peak off-state voltages v drm v rrm 400 500 600 v rms on-state current i t(av) 5.0 a non-repetitive peak on-state current i tsm 80 a max. operating junction temperature t j 110 o c storage temperature t stg -45~150 o c 5P4M 5p5m 5p6m general description parameter symbol test conditions min typ max unit repetitive peak off-state voltages v drm v rrm 400 ~600 v rms on-state current i t(av) full sine wave; t mb 103 o c 5.0 a on-state voltage v t i t =10a 1.4 v holding current i h v d = 24 v; i gt = 0.1 a 10 ma gate trigger current i gt v d = 6.0 v; r l = 100 10 ma gate trigger voltage v gt v d = 6.0 v; r l = 100 1.5 v triacs sensitive gate passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. typical applications include motor control, industrial domestic lighting, heating and staticand switching. product specification absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o to-220 tiger electronic co.,ltd
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