SUD30N04-10 vishay siliconix document number: 70782 s-56917erev. c, 23-mar-98 www.vishay.com faxback 408-970-5600 2-1 n-channel 40-v (d-s), 175 c mosfet v (br)dss (v) r ds(on) ( ) i d (a) 40 0.010 @ v gs = 10 v 30 a 40 0.014 @ v gs = 4.5 v 30 a d g s to-252 s gd top view drain connected to tab order number: SUD30N04-10 n-channel mosfet
parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 30 a a continuous drain current (t j = 175 c) t c = 100 c i d 30 a a pulsed drain current i dm 120 a avalanche current i ar 50 repetitive avalanche energy b l = 0.1 mh e ar 125 mj power dissipation t c = 25 c p d 97 c w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol typical maximum unit junction - to - ambient pcb mount d r thja 45 55 c/w j unc ti on- t o- a m bi en t free air r thja 110 125 c/w junction-to-case r thjc 1.5 1.8 notes: a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. surface mounted on 1o fr4 board.
SUD30N04-10 vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70782 s-56917erev. c, 23-mar-98
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