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ACT108W-600E ac thyristor power switch rev. 02 ? 26 may 2009 product data sheet 1. product profile 1.1 general description ac thyristor power switch in a sot223 surface-mountable plastic package 1.2 features and benefits ? common terminal on mounting base enables shared cooling pad ? exclusive negative gate triggering ? full cycle ac conduction ? high over-voltage withstand capability ? remote gate separate s the gate driver from the effects of the load current ? surface-mountable plastic package ? very high noise immunity 1.3 applications ? contactors, circuit breakers, valves, dispensers and door locks ? fan motor circuits ? lower-power highly in ductive, resistive and safety loads ? pump motor circuits 1.4 quick reference data table 1. quick reference symbol parameter conditions min typ max unit v drm repetitive peak off-state voltage - - 600 v i t(rms) rms on-state current full sine wave; t sp 112 c; see figure 3 ; see figure 1 ; see figure 2 --0.8a i gt gate trigger current v d =12v; t j =25c; i t = 100 ma; ld+ g-; see figure 10 1- 10ma v d =12v; t j =25c; i t = 100 ma; ld- g- 1- 10ma v cl clamping voltage i cl =100ma; t p =1ms; t j 125 c; see figure 17 650 - - v v pp peak pulse voltage t j = 25 c; non-repetitive, off-state; see figure 6 --2kv v t on-state voltage i t = 1.1 a; see figure 13 --1.3v
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 2 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch 2. pinning information 3. ordering information 4. limiting values table 2. pinning information pin symbol description simplified outline graphic symbol 1ldload s o t 2 2 3 (sc-73) 2 cm common 3g gate mb cm mounting base; connected to common 13 2 4 001aaj924 g cm ld table 3. ordering information type number package name description version ACT108W-600E sc-73 plastic surface-mounted package with increased heatsink; 4 leads sot223 table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v drm repetitive peak off-state voltage -600v i t(rms) rms on-state current full sine wave; t sp 112 c; see figure 3 ; see figure 1 ; see figure 2 -0.8a di t /dt rate of rise of on-state current i t =1a; i g =20ma; di g /dt = 0.2 a/s - 100 a/s i gm peak gate current t = 20 s-1a v gm peak gate voltage positive applied gate voltage - 15 v t stg storage temperature -40 150 c t j junction temperature - 125 c i tsm non-repetitive peak on-state current full sine wave; t p = 16.7 ms; t j(init) =25c - 8.8 a full sine wave; t p = 20 ms; t j(init) =25c; see figure 4 ; see figure 5 -8a i 2 ti 2 t for fusing t p = 10 ms; sine-wave pulse - 0.32 a 2 s p g(av) average gate power over any 20 ms period - 0.1 w v pp peak pulse voltage t j = 25 c; non-repetitive, off-state; see figure 6 -2kv
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 3 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch fig 1. rms on-state current as a function of surge duration; maximum values fig 2. rms on-state current as a function of solder point temperature; maximum values fig 3. total power dissipation as a function of rms on-state cu rrent; maximum values 003aac822 0 2 4 6 8 10 ? 2 10 ? 1 110 surge duration (s) i t(rms) (a) 003aac807 0 0.2 0.4 0.6 0.8 1 ? 50 0 50 100 150 t sp ( c) i t(rms) (a) 003aac803 0 0.2 0.4 0.6 0.8 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i t(rms) (a) (w) p tot = 180
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 4 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch fig 4. non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values fig 5. non-repetitive peak on-state current as a function of pulse width; maximum values fig 6. test circuit for inductive and resistive lo ads with conditions equivalent to iec 61000-4-5 003aac804 0 2 4 6 8 10 11010 2 10 3 number of cycles i tsm (a) i tsm t i t t j(init) = 25 c max 1/f 003aac805 1 10 10 2 10 3 10 ? 5 10 ? 4 10 ? 3 10 ? 2 t p (s) i tsm (a) i tsm t i t t j(init) = 25 c max t p 003aad077 l r 150 5 h 2 220 r g surge generator surge pulse iec 61000-4-5 standards r gen open circuit voltage dut load model 1.2 s/50 s waveform
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 5 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch 5. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-sp) thermal resistance from junction to solder point full cycle with heatsink compound; see figure 9 --15k/w r th(j-a) thermal resistance from junction to ambient full cycle; printed-circuit board mounted for minimum footprint; see figure 7 - 156 - k/w full cycle; printed-circuit board mounted for pad area; see figure 8 -70-k/w fig 7. minimum footprint sot223 fig 8. printed-circuit board pad area sot223 001aab508 3.8 min 1.5 min 1.5 min (3 ) 2.3 4.6 6.3 1.5 min 001aab509 7 4.6 15 36 9 10 18 4.5 60 50
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 6 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch 6. characteristics fig 9. transient thermal impedance from junction to solder point as a function of pulse width 003aac808 1 10 ? 1 10 10 2 z th(j-sp) (k/w) 10 ? 2 t p (s) 10 ? 5 110 10 ? 1 10 ? 2 10 ? 4 10 ? 3 t p p t table 6. characteristics symbol parameter conditions min typ max unit i gt gate trigger current v d =12v; t j =25c; i t =100ma; ld+ g-; see figure 10 1- 10ma v d =12v; t j =25c; i t = 100 ma; ld- g- 1 - 10 ma i l latching current v d =12v; t j =25c; i g =12ma; see figure 11 --30ma i h holding current v d =12v; t j =25c; see figure 12 -925ma v t on-state voltage i t = 1.1 a; see figure 13 --1.3v v gt gate trigger voltage i t = 100 ma; v d =600v; t j 125 c 0.15 - - v i t = 100 ma; v d =600v; t j =25c --1v i d off-state current v d =600v; t j 125 c - - 0.2 ma v d =600v; t j 25c --2a dv d /dt rate of rise of off-state voltage v dm =402v; t j = 125 c; gate open circuit; see figure 14 1000 - - v/s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =1a; dv com /dt = 15 v/s; gate open circuit; see figure 15 ; see figure 16 0.3 - - a/ms v cl clamping voltage i cl = 100 ma; t p =1ms; t j 125 c; see figure 17 650 - - v
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 7 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch fig 10. normalized gate trigger current as a function of junction temperature fig 11. normalized latching current as a function of junction temperature fig 12. normalized holding current as a function of junction temperature fig 13. on-state current as a function of on-state voltage i gt i gt(25 c) t j ( c) ? 50 0 150 100 50 1 2 3 0 003aac809 (1) (2) (1) (2) t j ( c) ? 50 150 100 050 003aac811 1 2 3 0 i l i l(25 c) t j ( c) ? 50 150 100 050 003aac810 1 2 3 0 i h i h(25 c) 003aac812 0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 2.0 v t (v) i t (a) (1) (2) (3)
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 8 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch fig 14. normalized rate of rise of off-state voltage as a function of junction temperature fig 15. normalized critical ra te of rise of commutating current as a function of junction temperature fig 16. normalized critical rate of change of commutating current as a function of critical rate of change of commutating voltage; minimum values fig 17. normalized clamping voltage (upper limit) as a function of junction temperature; minimum values t j ( c) 25 125 100 50 75 003aac813 4 8 12 0 a b 10 6 2 t j ( c) 25 125 100 50 75 003aac814 4 8 12 0 a b 003aac815 0 0.5 1.0 1.5 2.0 10 ? 1 11010 2 b (v/ s) a [b] a [spec] t j ( c) ? 50 150 100 050 003aac817 0.4 0.8 1.2 0 v cl v cl(25 c)
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 9 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch 7. package outline fig 18. package outline sot223 (sc-73) unit a 1 b p cd e e 1 h e l p qy w v references outline version european projection issue date iec jedec jeita mm 0.10 0.01 1.8 1.5 0.80 0.60 b 1 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.1 0.2 dimensions (mm are the original dimensions) sot223 sc-73 04-11-10 06-03-16 w m b p d b 1 e 1 e a a 1 l p q detail x h e e v m a a b b c y 0 2 4 mm scale a x 13 2 4 p lastic surface-mounted package with increased heatsink; 4 leads sot22 3
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 10 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch 8. revision history table 7. revision history document id release date data sheet status change notice supersedes ACT108W-600E_2 20090526 product data sheet - ACT108W-600E_1 modifications: ? table 6; dv d /dt min data uprated ACT108W-600E_1 20090429 product data sheet - -
ACT108W-600E_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 26 may 2009 11 of 12 nxp semiconductors ACT108W-600E ac thyristor power switch 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in su ch equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as th e item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the object ive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
nxp semiconductors ACT108W-600E ac thyristor power switch ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 26 may 2009 document identifier: ACT108W-600E_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 contact information. . . . . . . . . . . . . . . . . . . . . . 11

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