CMS-S040-040 s chottky b arrier d iode 2002/04/24 rev. 1 champion microelectronic corporation page 1 chip size(a): 1.016 * 1.016 mm 2 bond pad size(b) : 0.889 * 0.889 mm 2 thickness : 300 m 20 m metalization : anode ti/ni/ag features : * extremely low forward volts * guard ring protection * low reverse leakage current metalization : cathode ti/ni/ag electrical characteristics sym. spec. limit unit maximum instantaneous forward volt at if : 1.0amp. 25 c vf max 0.48 volt minimum instantaneous reverse voltage at ir : 200 ua 25 c vr min. 43 volt. minimum non-repetitive peak surge current at 25 c ifsm 40 amp storage temperature tstg -65 to +125 c hsinchu headquarter sales & marketing 5f, no. 11, park avenue ii, science-based industrial park, hsinchu city, taiwan 11f, no. 306-3, sec. 1, ta tung road, hsichih, taipei hsien 221, taiwan tel: +886-3-567 9979 tel: +886-2-8692 1591 fax: +886-3-567 9909 fax: +886-2-8692 1596 a b
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