vishay TSDF02830Y document number 85108 rev. 1, 23-oct-02 vishay semiconductors www.vishay.com 1 vy cw wm2 12 3 654 16903 electrostatic sensitive device. observe precautions for handling. dual - mosmic ? - two agc amplifiers for tv-tuner prestage with 5 v supply voltage comments mosmic - mos m onolithic i ntegrated c ircuit features ? easy gate 1 switch-off with pnp switching transis- tors inside pll two differently optimized amplifiers in a single package integrated gate protection diodes low noise figure, high gain typical forward transadmittance of 31 ms resp 28 ms partly internal self biasing-network on chip superior cross modulation at gain reduction high agc-range with soft slope main agc control range from 3 v to 0.5 v supply voltage 5 v (3 v to 7 v) smd package, standard pinning applications low noise gain controlled vhf and uhf input stages, such as in digital and analog tv tuners. mechanical data weight: 6 mg case: sot 363 v - vishay y - year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001) cw - calendar week, is variable for number from 01 to 52 number of calendar week is always indicating place of pin 1 pinning: 1 = gate 1 (amplifier 1), 2 = gate 2, 3 = drain (amplifier 1), 4 = drain (amplifier 2), 5 = source, 6 = gate1 (amplifier 2) amp1 amp2 g1 1 g1 6 agc vhf in uhf in c c d 3 g2 (common) 2 s (common) c rfc vhf out +5 v d 4 c rfc uhf out 16902 +5 v c 5 rg1 rg1 +5 v +5 v
document number 85108 rev. 1, 23-oct-02 www.vishay.com 2 vishay TSDF02830Y vishay semiconductors parts table absolute maximum ratings t amb = 25 c, unless otherwise specified amplifier 1 following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for vhf applications amplifier 2 following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for uhf applications electrical dc characteristics t amb = 25 c, unless otherwise specified amplifier 1 following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for vhf applications part marking package TSDF02830Y wm2 sot363 parameter te s t c o n d i t i o n symbol value unit drain - source voltage v ds 8 v drain current i d 30 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma gate 1 - source voltage + v g1sm 6 v - v g1sm 1.5 v gate 2 - source voltage v g2sm 6 v total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg - 55 to + 150 c channel ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu r thcha 450 k/w parameter te s t c o n d i t i o n symbol value unit drain - source voltage v ds 8 v drain current i d 25 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma gate 1 - source voltage + v g1sm 6 v - v g1sm 1.5 v gate 2 - source voltage v g2sm 6 v total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg - 55 to + 150 c channel ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu r thcha 450 k/w parameter te s t c o n d i t i o n symbol min typ. max unit drain - source breakdown voltage i d = 10 a, v g1s = v g2s = 0 v (br)dss 12 v gate 1 - source breakdown voltage + i g1s = 10 ma, v g2s = v ds = 0 + v (br)g1ss 7 10 v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 7 10 v
vishay TSDF02830Y document number 85108 rev. 1, 23-oct-02 vishay semiconductors www.vishay.com 3 amplifier 2 following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for uhf applications electrical ac characteristics t amb = 25 c, unless otherwise specified amplifier 1 v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 56 k ? , i d = i dso, f = 1 mhz, t amb = 25 c, unless otherwise specified following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for vhf applications gate 1 - source leakage current + v g1s = 5 v, v g2s = v ds = 0 + i g1ss 20 na gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 20 na drain - source operating current v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 56 k ? i dso 8 12 17 ma gate 1 - source cut-off voltage v ds = 5 v, v g2s = 4, i d = 20 a v g1s(off) 0.3 1.0 v gate 2 - source cut-off voltage v ds = v rg1 = 5 v, r g1 = 56 k ? , i d = 20 a v g2s(off) 0.3 1.2 v parameter test condition symbol min ty p. max unit drain - source breakdown voltage i d = 10 a, v g1s = v g2s = 0 v (br)dss 12 v gate 1 - source breakdown voltage + i g1s = 10 ma, v g2s = v ds = 0 + v (br)g1ss 7 10 v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 7 10 v gate 1 - source leakage current + v g1s = 5 v, v g2s = v ds = 0 + i g1ss 20 na gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 20 na drain - source operating current v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 56 k ? i dso 8 12 17 ma gate 1 - source cut-off voltage v ds = 5 v, v g2s = 4, i d = 20 a v g1s(off) 0.3 1.0 v gate 2 - source cut-off voltage v ds = v rg1 = 5 v, r g1 =100 k ? , i d = 20 a v g2s(off) 0.3 1.2 v parameter test condition symbol min ty p. max unit forward transadmittance |y 21s | 23 28 33 ms gate 1 input capacitance c issg1 2.5 3.0 pf feedback capacitance c rss 20 ff output capacitance c oss 0.9 pf power gain g s = 2 ms, b s = b sopt , g l = 0.5 ms, b l = b lopt , f = 200 mhz g ps 32 db g s = 2 ms, b s = b sopt , g l = 1 ms, b l = b lopt , f = 400 mhz g ps 28 db g s = 3.3 ms, b s = b sopt , g l = 1 ms, b l = b lopt , f = 800 mhz g ps 22 db agc range v ds = 5 v, v g2s = 0.5 to 4 v, f = 200 mhz g ps 50 db noise figure g s = g l = 20 ms, b s = b l = 0, f = 50 mhz f 4.5 6.0 db g s = 2 ms, g l = 1 ms, b s = b sopt , f = 400 mhz f 1.0 1.6 db g s = 3.3 ms, g l = 1 ms, b s = b sopt , f = 800 mhz f 1.5 2.3 db parameter test condition symbol min ty p. max unit
document number 85108 rev. 1, 23-oct-02 www.vishay.com 4 vishay TSDF02830Y vishay semiconductors remark on improving intermodulation behavior: by setting r g1 smaller than 56 k ? , typical value of i dso will raise and improved intermodulation behavior will be performed. amplifier 2 v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 100 k ? , i d = i dso, f = 1 mhz, t amb = 25 c, unless otherwise specified following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for uhf applications remark on improving intermodulation behavior: by setting r g1 smaller than 100 k ? , e. g. 68 k ? typical value of i dso will raise and improved intermodulation behavior will be performed. cross modulation input level for k = 1 % @ 0 db agc f w = 50 mhz, f unw = 60 mhz x mod 90 dbv input level for k = 1 % @ 40 db agc f w = 50 mhz, f unw = 60 mhz x mod 105 dbv parameter te s t c o n d i t i o n symbol min typ. max unit forward transadmittance |y 21s | 27 31 35 ms gate 1 input capacitance c issg1 1.9 2.3 pf feedback capacitance c rss 20 ff output capacitance c oss 0.9 pf power gain g s = 2 ms, b s = b sopt , g l = 0.5 ms, b l = b lopt , f = 200 mhz g ps 33 db g s = 2 ms, b s = b sopt , g l = 1 ms, b l = b lopt , f = 400 mhz g ps 30 db g s = 3.3 ms, b s = b sopt , g l = 1 ms, b l = b lopt , f = 800 mhz g ps 25 db agc range v ds = 5 v, v g2s = 0.5 to 4 v, f = 200 mhz g ps 50 db noise figure g s = g l = 20 ms, b s = b l = 0, f = 50 mhz f 6.0 8.0 db g s = 2 ms, g l = 1 ms, b s = b sopt , f = 400 mhz f 1.0 1.5 db g s = 3.3 ms, g l = 1 ms, b s = b sopt , f = 800 mhz f 1.3 2.0 db cross modulation input level for k = 1 % @ 0 db agc f w = 50 mhz, f unw = 60 mhz x mod 90 dbv input level for k = 1 % @ 40 db agc f w = 50 mhz, f unw = 60 mhz x mod 100 105 dbv parameter te s t c o n d i t i o n symbol min typ. max unit
vishay TSDF02830Y document number 85108 rev. 1, 23-oct-02 vishay semiconductors www.vishay.com 5 package dimensions in mm 14280
document number 85108 rev. 1, 23-oct-02 www.vishay.com 6 vishay TSDF02830Y vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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