3.1 - 55 3.1 4 11 r0 high current, high voltage 600v and 1200v, up to 75 amp igbts with fred diodes, half-bridge configuration half-bridge igbts in hermetic isolated power block packages features ? includes internal fred diode ? rugged package design ? solder terminals ? very low saturation voltage ? fast switching, low drive current ? available screened to mil-s-19500, tx, txv and s levels ? ceramic feedthroughs description this series of hermetically packaged products feature the latest advanced igbt technology combined with a package designed specifically for high efficiency, high current applications. they are ideally suited for hi-rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. general characteristics @ 25c (per switch) schematic part v ce i c number (v) (a) v ce(sat) type om60l60hb 600 75 1.8 volts lo sat. OM45L120HB 1200 70 3 volts lo sat. om50f60hb 600 75 2.7 volts hi speed om35f120hb 1200 70 4 volts hi speed OM45L120HB om35f120hb om60l60hb om50f60hb c1 g1 c2 e1 preliminary data sheet c1 g1 c2 e1 g2 e2
3.1 - 56 om60l60hb OM45L120HB om50f60hb om35f120hb 3.1 electrical characteristics: om60l60hb (t c = 25c unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics collector emitter breakdown voltage, i c = 250 a, v ce = 0 v (br)ces 600 - - v zero gate voltage drain current , v ge = 0, v ce = max. rat. i ces - - 0.25 ma v ce = 0.8 max. rat., v ge = 0, t c = 125c - - 1.0 ma gate emitter leakage current, v ge = 20 v, v ce = 0 v i ges - - 100 na on characteristics gate-threshold voltage, v ce = v ge , i c = 250 a v ge(th) 2.5 - 5.0 v collector emitter saturation voltage, v ge = 15 v, i c = 60 a v ce(sat) - - 1.8 v dynamic characteristics forward transconductance v ce = 10 v, i c = 60 a g fs 30 - - s input capacitance v ge = 0, c iss - 4000 - pf output capacitance v ce = 25 v, c oss - 340 - pf reverse transfer capacitance f = 1.0 mhz c rss - 100 - pf switching-inductive resistive characteristics turn-on delay time t d(on) -50-ns rise time v cc = 480 v, i c = 60 a, t r - 200 - ns turn-off delay time r gs = 2.7 , v gs = 15 v, t d(off) - 600 - ns fall time l = 100 h t f - 500 - ns switching-inductive load characteristics turn-on delay time v ce(clamp) = 480 v, i c = 60 a t d(on) - 1000 - ns fall time v ge = 15 v, r g = 2.7 t f - 1000 - ns turn-off losses l = 100 h, t j = 125c e (off) - 26 - m ws source drain diode characteristics maximum forward voltage i f = 60 a, t j = 25c v f - - 1.85 v i f = 60 a, t j = 150c - - 1.50 maximum reverse current v r = 600 v, t j = 25c i r - - 200 a v r = 480 v, t j = 125c - - 14 ma reverse recovery time i f = 1 a, di/dt = 200 a /s t rr --50ns v r = 30 v, t j = 25c electrical characteristics: OM45L120HB (t c = 25c unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics collector emitter breakdown voltage, i c = 3 ma, v ce = 0 v (br)ces 1200 - - v zero gate voltage drain current , v ge = 0, v ce = max. rat. i ces - - 3.0 ma v ce = 0.8 max. rat., v ge = 0, t j = 125c - - 1.2 ma gate emitter leakage current, v ge = 20 v, v ce = 0 v i ges - - 100 na on characteristics gate-threshold voltage, v ce = v ge , i c = 4 ma v ge(th) 4.0 - 8.0 v collector emitter saturation voltage, v ge = 15 v, i c = 45 a v ce(sat) - - 3.0 v dynamic characteristics forward transconductance v ce = 10 v, i c = 45 a g fs 26 - - s input capacitance v ge = 0, c iss - 4200 - pf output capacitance v ce = 25 v, c oss - 290 - pf reverse transfer capacitance f = 1.0 mhz c rss -65-pf switching-inductive resistive characteristics turn-on delay time t d(on) -80-ns rise time v cc = 960 v, i c = 45 a, t r - 250 - ns turn-off delay time r gs = 2.7 , v gs = 15 v, t d(off) - 450 - ns fall time l = 100 h t f - 1200 - ns switching-inductive load characteristics turn-on delay time v ce(clamp) = 960 v, i c = 45 a t d(on) - 450 - ns fall time v ge = 15 v, r g = 2.7 t f - 1200 - ns turn-off losses l = 100 h, t j = 125c e (off) - 27 - m ws source drain diode characteristics maximum forward voltage i f = 52 a, t j = 25c v f - - 2.55 v i f = 52 a, t j = 150c - - 2.15 maximum reverse current v r = 1200 v, t j = 25c i r - - 2.2 ma v r = 960 v, t j = 125c - - 14 ma reverse recovery time i f = 1 a, di/dt = 200 a /s t rr --60ns v r = 30 v, t j = 25c
3.1 - 57 om60l60hb OM45L120HB om50f60hb om35f120hb 3.1 electrical characteristics: om50f60hb (t c = 25c unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics collector emitter breakdown voltage, i c = 250 a, v ce = 0 v (br)ces 600 - - v zero gate voltage drain current , v ge = 0, v ce = max. rat. i ces - - 0.25 ma v ce = 0.8 max. rat., v ge = 0, t j = 125c - - 1.0 ma gate emitter leakage current, v ge = 20 v, v ce = 0 v i ges - - 100 na on characteristics gate-threshold voltage, v ce = v ge , i c = 250 a v ge(th) 2.5 - 5.0 v collector emitter saturation voltage, v ge = 15 v, i c = 50 a v ce(sat) - - 2.7 v dynamic characteristics forward transconductance v ce = 10 v, i c = 50 a g fs 25--s input capacitance v ge = 0, c iss - 4000 - pf output capacitance v ce = 25 v, c oss - 340 - pf reverse transfer capacitance f = 1.0 mhz c rss - 100 - pf switching-inductive resistive characteristics turn-on delay time t d(on) -50-ns rise time v cc = 480 v, i c = 50 a, t r - 200 - ns turn-off delay time r gs = 2.7 , v gs = 15 v, l = 100 h t d(off) - 200 - ns fall time t f - 300 - ns switching-inductive load characteristics turn-on delay time v ce(clamp) = 480 v, i c = 50 a t d(on) - 300 - ns fall time v ge = 15 v, r g = 2.7 t f - 600 - ns turn-off losses l = 100 h, t j = 125c e (off) - 9.6 - m ws source drain diode characteristics maximum forward voltage i f = 60 a, t j = 25c v f - - 1.85 v i f = 60 a, t j = 150c - - 1.50 maximum reverse current v r = 600 v, t j = 25c i r - - 200 a v r = 480 v, t j = 125c - - 14 ma reverse recovery time i f = 1 a, di/dt = 200 a /s t rr --50ns v r = 30 v, t j = 25c electrical characteristics: om35l120hb (t c = 25c unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics collector emitter breakdown voltage, i c = 3 ma, v ce = 0 v (br)ces 1200 - - v zero gate voltage drain current , v ge = 0, v ce = max. rat. i ces - - 3.0 ma v ce = 0.8 max. rat., v ge = 0, t j = 125c - - 1.2 ma gate emitter leakage current, v ge = 20 v, v ce = 0 v i ges - - 200 na on characteristics gate-threshold voltage, v ce = v ge , i c = 4 ma v ge(th) 4.0 - 8.0 v collector emitter saturation voltage, v ge = 15 v, i c = 35 a v ce(sat) - - 4.0 v dynamic characteristics forward transconductance v ce = 10 v, i c = 35 a g fs 26--s input capacitance v ge = 0, c iss - 3800 - pf output capacitance v ce = 25 v, c oss - 235 - pf reverse transfer capacitance f = 1.0 mhz c rss -60-pf switching-inductive resistive characteristics turn-on delay time t d(on) -80-ns rise time v cc = 960 v, i c = 35 a, t r - 150 - ns turn-off delay time r gs = 2.7 , v gs = 15 v, t d(off) - 400 - ns fall time l = 100 h t f - 700 - ns switching-inductive load characteristics turn-on delay time v ce(clamp) = 960 v, i c = 35 a t d(on) - 400 - ns fall time v ge = 15 v, r g = 2.7 t f - 1100 - ns turn-off losses l = 100 h, t j = 125c e (off) - 54 - m ws source drain diode characteristics maximum forward voltage i f = 52 a, t j = 25c v f - - 2.55 v i f = 52 a, t j = 150c - - 2.15 maximum reverse current v r = 1200 v, t j = 25c i r - - 2.2 ma v r = 960 v, t j = 125c - - 14 ma reverse recovery time i f = 1 a, di/dt = 200 a /s t rr --60ns v r = 30 v, t j = 25c
3.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 om60l60hb OM45L120HB om50f60hb om35f120hb absolute maximum ratings (t c = 25c unless otherwise noted) igbt parameters 60l60hb 45l120hb 50f60hb 35f120hb units v ce drain source voltage 600 1200 600 1200 v v cer drain gate voltage (r ge = 20 k ) 600 1200 600 1200 v i c @ t c = 25c continuous drain current 75 70 75 70 a i c @ t j = 90c continuous drain current 60 45 50 35 a i c pulsed pulsed drain current 200 180 200 140 a junction-to-case linear derating factor 2 2 2 2 w/c junction-to-ambient linear derating factor .03 .03 .03 .03 w/c r thjc junction-to-case 0.5 0.5 0.5 0.5 c/w r thja junction-to-ambient 30 30 30 30 c/w rectifier piv 600 1200 600 1200 v i o 60 52 60 52 a t rr 35 40 35 40 nsec mechanical outline 2.000 1.500 1.500 .250 2 plcs. .375 .875 1.375 1.750 .375 .030 .275 .510 .050 1.250 .625 .472 .125 dia. 5 plcs. .166 dia. 6 plcs. ?10 ?10 ?10 .125 .515 max. .324 terminal 1 .225 .100 dia. 6 plcs.
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