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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC4924 description high breakdown voltage- : v (br)cbo = 1500v(min) high switching speed high reliability applications very high-definition crt display horizontal deflection output applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current-continuous 10 a i cp collector current-peak 25 a collector power dissipation @ t a =25 3.0 p c collector power dissipation @ t c =25 70 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4924 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0 800 v v ce( sat ) collector-emitter saturation voltage i c = 8a; i b = 2a b 5.0 v v be( sat ) base-emitter saturation voltage i c = 8a; i b = 2a b 1.5 v i cbo collector cutoff current v cb = 800v ; i e = 0 10 a i ceo collector cutoff current v ce = 1500v ; r be = 0 1.0 ma i ebo emitter cutoff current v eb = 4v ; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a ; v ce = 5v 8 h fe-2 dc current gain i c = 8a ; v ce = 5v 4 8 switching times t stg storage time 3.0 s t f fall time i c = 6a , i b1 = 1.2a; i b2 = -2.4a r l = 33.3 ; v cc = 200v 0.2 s isc website www.iscsemi.cn 2 |
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