micro international, inc. 179-204 belle forrest circle nashville, tn 37221 tel: 615-662-1200 fax 615-662-1226 micro international, inc product data part number LDTBFW30 and LDTBFW30t micro-lid npn transistor
micro-lid transistors LDTBFW30 and LDTBFW30t description: the LDTBFW30 (untinned) and LDTBFW30t (tinned) are npn silicon 1.6 ghz wideband transistors in very small, rugged, surface mount, 4-post ceramic packages (micro international manufactured package p/n 4-075-1). the LDTBFW30 and LDTBFW30t meet the general specifications of the bfw30 transistor. the 4-075-1 micro-lid package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. the LDTBFW30 and LDTBFW30t can be provided with special feature options such as additional temperature cycling, screening, and matching hfe selection. maximum ratings: parameter symbol rating collector-base voltage vcbo 20 v collector-emitter voltage vceo 10 v emitter-base voltage vebo 2.5 v collector current ic 50 ma total dissipation pt 350 mw operating junction temperature tj 150 c storage temperature tstg -65 c to 150 c operating temperature toper -55 c to 125 c 1/ 3 december 1997 www.microlid.com sales@microlid.com
micro-lid transistors LDTBFW30 and LDTBFW30t ______________________________________________________________________________________ outline / schematic: dimensions / marking: length .075 + .003 post 1 (emitter) .015 x .010 typ width .040 + .003 post 2 (base) .015 x .010 typ height .035 + .003 post 3,4 (collecto r) .015 x .012 typ marking on back of package : gray stripe over emitter and red dot in center (post down configuration) standard in-process screening requirements: ? semiconductor die and micro-lid package visual inspection ? wire pull test ? 24 hour stabilization bake at 150 c ? 10 temperature cycles from ?55 c to 125 c ? 100% electrical test of dc characteristics at 25 c ? final visual inspection ________________________________________________________________ 2/ 3 december 1997 .075 .040 4 3 2 1 .035 substrate / circuit board 1 2 3, 4 top view end view side view www.microlid.com sales@microlid.com
micro-lid transistors LDTBFW30 and LDTBFW30t electrical characteristics (25 c ambient) parameter symbol min typ max units collector-base breakdown bvcbo 20 -- -- v ic = 100 ua, ie = 0 collector-emitter breakdown* bvceo 10 -- -- v ib = 0, ic = 10 ma emitter-base breakdown bvebo 2.5 -- -- v ic = 0, ie = 100 ua collector-base cutoff current icbo -- -- 50 na vcb = 10 v dc forward current gain* hfe ic = 25 ma, vce = 5 v 25 -- -- ic = 50 ma, vce = 5 v 25 -- -- collector capacitance cobo -- -- 1.5 pf vcb = 5 v, ie = 0 f = 1 mhz gain bandwidth product ft - - 1.6 -- ghz ic = 50 ma, vce = 5 v f = 500 mhz noise figure nf -- -- 5 db ic = 2 ma, vce = 5 v f = 500 mhz * pulse test, pulse width < 300 usec, duty cycle < 2% 3/ 3 december 1997 www.microlid.com sales@microlid.com
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