7mbr50sb060 igbt modules applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply maximum ratings and characteristics absolute maximum ratings (tc=25c unless without specified) item symbol condition rat ing unit collector-emitter voltage gate-emitter voltage collector current collector power dissipation collector-emitter voltage gate-emitter voltage collector current collector power dissipation repetitive peak reverse voltage repetitive peak reverse voltage average output current surge current (non-repetitive) i 2 t (non-repetitive) converter brake inverter operating junction temperature storage temperature isolation between terminal and copper base *2 voltage between thermistor and others *3 mounting screw torque v ces v ges i c i cp -i c p c v ces v ges i c i cp p c v rrm v rrm i o i fsm i 2 t t j t stg v iso continuous 1ms 1 device continuous 1ms 1 device 50hz/60hz sine wave tj=150c, 10ms half sine wave ac : 1 minute 600 20 50 100 50 200 600 20 30 60 120 600 800 50 350 613 +150 -40 to +125 ac 2500 ac 2500 3.5 * 1 v v a a a w v v a a w v v a a a 2 s c c v v nm *1 recommendable value : 2.5 to 3.5 nm (m5) *2 all terminals should be connected together when isolation test will be done. *3 terminal 8 and 9 should be connected together. terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. igbt module (s series) 600v / 50a / pim features low v ce (sat) compact package p.c. board mount converter diode bridge, dynamic brake circuit
electrical characteristics (tj=25c unless otherwise specified) item symbol condition characteristics unit min. typ. max. zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance turn-on time turn-off forward on voltage reverse recovery time of frd zero gate voltage collector current gate-emitter leakage current collector-emitter saturation voltage turn-on time turn-off time reverse current forward on voltage reverse current resistance b value thermistor converter brake inverter i ces i ges v ge(th) v ce(sat) c ies t on t r t r(i) t off t f v f t rr i ces i ges v ce(sat) t on t r t off t f i rrm v fm i rrm r b v ce =600v, v ge =0v v ce =0v, v ge =20v v ce =20v, i c =50ma v ge =15v, ic=50a chip terminal v ge =0v, v ce =10v, f=1mhz v cc =300v i c =50a v ge =15v r g =51 w i f =50a chip terminal i f =50a v ces =600v, v ge =0v v ce =0v, v ge =20v i c =30a, v ge =15v chip terminal v cc =300v i c =30a v ge =15v r g =82 w v r =600v i f =50a chip terminal v r =800v t=25c t=100c t=25/50c 1.0 0.2 8.5 2.4 1.2 0.6 1.0 0.35 2.6 0.3 1.0 0.2 2.4 1.2 0.6 1.0 0.35 1.0 1.5 1.0 5000 5.5 7.8 ma a v v pf s v s ma a v s ma v ma w k item symbol condition characteristics unit min. typ. max. inverter igbt inverter fwd brake igbt converter diode with thermal compound 0.63 1.33 1.04 c/w 0.90 0.05 thermal resistance ( 1 device ) rth(j-c) contact thermal resistance * rth(c-f) thermal resistance characteristics igbt modules 7mbr50sb060 * this is the value which is defined mounting on the additional cooling fin with thermal compound equivalent circuit schematic 1.8 1.95 0.45 0.25 0.08 0.40 0.05 1.75 1.9 1.8 1.95 0.45 0.25 0.40 0.05 1.1 1.2 5000 465 495 520 3305 3375 3450 89 [thermistor] [converter] 21(p) 23(n) 1(r) 2(s) 3(t) [brake] [inverter] 22(p1) 7(b) 14(gb) 24(n1) 20(gu) 19(eu) 13(gx) 18(gv) 17(ev) 4(u) 12(gy) 5(v) 6(w ) 16(gw) 11(gz) 10(en) 15(ew)
igbt modules 7mbr50sb060 characteristics (representative) 012345 0 20 40 60 80 100 120 10v 12v 15v vge= 20v [ inverter ] collector current vs. collector-emitter voltage tj= 25 o c (typ.) collector current : ic [ a ] collector - emitter voltage : vce [ v ] 012345 0 20 40 60 80 100 120 10v 12v 15v vge= 20v [ inverter ] collector current vs. collector-emitter voltage tj= 125 o c (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 01234 0 20 40 60 80 100 120 tj= 25 o c tj= 125 o c [ inverter ] collector current vs. collector-emitter voltage vge=15v (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 5 10152025 0 2 4 6 8 10 ic= 25a ic= 50a ic=100a [ inverter ] collector-emitter voltage vs. gate-emitter voltage tj= 25 o c (typ.) collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] 0 5 10 15 20 25 30 35 100 1000 10000 20000 [ inverter ] capacitance vs. collector-emitter voltage (typ.) vge=0v, f= 1mhz, tj= 25 o c capacitance : cies, coes, cres [ pf ] collector - emitter voltage : vce [ v ] coes cres cies 0 50 100 150 200 250 300 0 100 200 300 400 500 [ inverter ] dynamic gate charge (typ.) vcc=300v, ic=50a, tj= 25 o c gate charge : qg [ nc ] collector - emitter voltage : vce [ v ] 0 5 10 15 20 25 gate - emitter voltage : vge [ v ]
igbt modules 7mbr50sb060 vcc=300v, v ge =15v, rg=51 w , tj=25c vcc=300v, v ge =15v, rg=51 w , tj=125c vcc=300v, ic=50a, v ge =15v, tj=25c vcc=300v, v ge =15v, rg=51 w vcc=300v, ic=50a, v ge =15v, tj=125c +v ge =15v, -v ge <15v, rg>51 w , tj<125c = = = 0 20406080 10 100 1000 ton tr toff tf [ inverter ] switching time vs. collector current (typ.) switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] 0 20406080 10 100 1000 tf tr ton toff [ inverter ] switching time vs. collector current (typ.) collector current : ic [ a ] switching time : ton, tr, toff, tf [ nsec ] 10 50 100 500 10 100 1000 5000 toff ton tr tf [ inverter ] switching time vs. gate resistance (typ.) gate resistance : rg [ w ] switching time : ton, tr, toff, tf [ nsec ] 0 20406080100 0 1 2 3 4 5 err(25 o c) eoff(25 o c) eon(25 o c) err(125 o c) eoff(125 o c) eon(125 o c) [ inverter ] switching loss vs. collector current (typ.) switching loss : eon, eoff, err [ mj/pulse ] collector current : ic [ a ] 10 50 100 500 0 2 4 6 8 10 [ inverter ] switching loss vs. gate resistance (typ.) switching loss : eon, eoff, err [ mj/pulse ] gate resistance : rg [ w ] eon err eoff 0 200 400 600 800 0 20 40 60 80 100 120 [ inverter ] reverse bias safe operating area collector - emitter voltage : vce [ v ] collector current : ic [ a ]
igbt modules 7mbr50sb060 0123 0 20 40 60 80 100 120 tj=25 o c tj=125 o c [ inverter ] forward current vs. forward on voltage (typ.) forward current : if [ a ] forward on voltage : vf [ v ] 0 20406080 10 100 300 irr(125 o c) irr(25 o c) trr(25 o c) trr(125 o c) [ inverter ] reverse recovery characteristics (typ.) forward current : if [ a ] reverse recovery current : irr [ a ] reverse recovery time : trr [ nsec ] 0.0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 100 120 tj= 25 o c tj= 125 o c [ converter ] forward current vs. forward on voltage (typ.) forward on voltage : vfm [ v ] forward current : if [ a ] 0.001 0.01 0.1 1 0.01 0.1 1 5 igbt[brake] transient thermal resistance thermal resistanse : rth(j-c) [ o c/w ] pulse width : pw [ sec ] fwd[inverter] conv. diode igbt[inverter] -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.1 1 10 100 200 [ thermistor ] temperature characteristic (typ.) temperature [ o c ] resistance : r [ k w ] vcc=300v, v ge =15v, rg=51 w
igbt modules 7mbr50sb060 012345 0 10 20 30 40 50 60 70 10v 12v 15v vge= 20v [ brake ] collector current vs. collector-emitter voltage tj= 25 o c (typ.) collector current : ic [ a ] collector - emitter voltage : vce [ v ] 012345 0 10 20 30 40 50 60 70 10v 12v 15v vge= 20v [ brake ] collector current vs. collector-emitter voltage tj= 125 o c (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 01234 0 10 20 30 40 50 60 70 tj= 25 o c tj= 125 o c [ brake ] collector current vs. collector-emitter voltage vge=15v (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 5 10152025 0 2 4 6 8 10 ic= 15a ic= 30a ic= 60a [ brake ] collector-emitter voltage vs. gate-emitter voltage tj= 25 o c (typ.) collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] 0 5 10 15 20 25 30 35 100 1000 10000 [ brake ] capacitance vs. collector-emitter voltage (typ.) vge=0v, f= 1mhz, tj= 25 o c capacitance : cies, coes, cres [ pf ] collector - emitter voltage : vce [ v ] coes cres cies 0 50 100 150 200 0 100 200 300 400 500 [ brake ] dynamic gate charge (typ.) vcc=300v, ic=30a, tj= 25 o c gate charge : qg [ nc ] collector - emitter voltage : vce [ v ] 0 5 10 15 20 25 gate - emitter voltage : vge [ v ]
igbt modules 7mbr50sb060 24 23 22 21 20 19 18 17 16 15 14 10 9 8 7 1 6 5 4 3 2 122 1 110 0.3 94.5 0.3 99.6 0.3 13.09 15.24 19.05 19.05 15.24 14.995 15.24 15.24 15.24 15.24 15.24 22.86 8-r2.25 0.3 4-?.5 0.3 62 1 50 0.3 57.5 0.3 39.9 0.3 15.24 15.475 3.81 3.81 3.81 3.81 19.697 11.43 11.43 4.055 4.198 11.665 20.5 1 17 1 3.5 0.5 2.9 0.3 1.1 0.3 6.5 0.5 1 0.2 a a 11.5 +0.5 0 11.5 +0.5 0 shows theory dimensions ?.5 0.1 ?.1 0.1 6 0.3 1.5 0.3 section a-a 1.15 0.2 ?.4 0.8 0.2 3.81 4=15.24 m712 outline drawings, mm
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