bat 60a semiconductor group jan-20-1999 1 silicon schottky diode rectifier schottky diode with extreme low v f drop for mobile communication for power supply for clamping and protection in low voltage applications for detection and step-up-conversion vps05176 1 2 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking ordering code pin configuration package bat 60a white/3 q62702-a1188 1 = c 2 = a sod-323 maximum ratings parameter symbol value unit diode reverse voltage v r 10 v forward current i f 3 a surge forward current (t < 10ms) i fsm 5 total power dissipation, t s = 28 c p tot 1350 mw junction temperature t j 150 c storage temperature t stg -55...+150 thermal resistance junction - ambient 1) r thja 160 k/w junction - soldering point r thjs 90 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bat 60a semiconductor group jan-20-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 5 v v r = 8 v - - - 2.6 ma 0.3 0.6 i r reverse current v r = 8 v, t a = 80 c i r - 18 - forward voltage i f = 10 ma i f = 100 ma i f = 1000 ma v f 0.1 - - 0.12 0.2 0.3 0.15 - - v ac characteristics c t - 20 - pf diode capacitance v r = 5 v, f = 1 mhz
bat 60a semiconductor group jan-20-1999 3 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 400 800 1200 1600 2000 2400 ma 3200 i f t s t a reverse current i r = f ( t a ) v r = 8v -20 0 20 40 60 c 100 t a -5 10 -4 10 -3 10 -2 10 -1 10 a i r permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
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