linear & power a m pl ifiers - chi p 3 3 - 1 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gaas hemt mmic medium power amplifier, 81 - 86 ghz v00.0110 general description features functional diagram h igh gain: 12 db h igh p1db: +19 dbm bias s upply: +4v 50 o hm m atched i nput/ o utput die s ize: 2.57 x 1.70 x 0.05 mm electrical specifcations , t a = +25 c, vdd1=vdd2 = 4v, idd1+idd2 = 240ma [2] typical applications this hm c- a p h 634 is ideal for: ? s hort h aul / h igh capacity links ? w ireless l an bridges ? m ilitary & s pace ? e -band communication s ystems the hm c- a p h 634 is a two stage ga a s hem t mmi c m edium power a mplifer which operates between 81 and 86 g h z. the hm c- a p h 634 provides 12 db of gain, and an output power of up to +20 dbm at 1 db compression from a +4v supply. a ll bond pads and the die backside are ti/ a u metallized and the amplifer device is fully passivated for reliable operation. the hm c- a p h 634 ga a s hem t mmi c m edium power a mplifer is compatible with conven- tional die attach methods, as well as thermocomp- ression and thermosonic wire bonding, making it ideal for m c m and hybrid microcircuit applications. a ll data shown herein is measured with the chip in a 50 o hm environment and contacted with rf probes. hmc-aph634 parameter m in. typ. m ax. units f requency r ange 81 - 86 g h z gain 7 12 db i nput r eturn loss 7 db o utput r eturn loss 8 db o utput power for 1db compression (p1db) 19 dbm s upply current ( i dd1+ i dd2) 240 m a [1] unless otherwise indicated, all measurements are from probed die. [2] a djust vgg1=vgg2 between -0.8v to +0.3v (typ. -0.1v) to achieve i dd total = 240m a
l inear & p ower a m pl ifiers - chi p 3 3 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-aph634 v00.0110 gaas hemt mmic medium power amplifier, 81 - 86 ghz fixtured pout vs. frequency output return loss vs. frequency linear gain vs. frequency input return loss vs. frequency -15 -10 -5 0 80 82 84 86 88 90 return loss (db) frequency (ghz) 5 10 15 20 25 80 82 84 86 88 90 p1db (dbm) frequency (ghz) 0 5 10 15 80 82 84 86 88 90 gain (db) frequency (ghz) -15 -10 -5 0 80 82 84 86 88 90 return loss (db) frequency (ghz)
linear & power a m pl ifiers - chi p 3 3 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-aph634 v00.0110 gaas hemt mmic medium power amplifier, 81 - 86 ghz outline drawing absolute maximum ratings e l e ct ros t a t ic sensi t i v e de v ic e o b ser v e han dl in g p re c a ut ions no t es : 1. a ll d imensions are in in c hes [ mm ]. 2. b a ck si d e me t a ll i z a t ion : g o ld. 3. b a ck si d e me t a l is g ro u n d. 4. b on d p a d me t a ll i z a t ion : g o ld. 5. c onne ct ion not re qu ire d for u n l a b e l e d b on d p a d s . 6. o v era ll d ie si z e .002 drain bias voltage +4.5v gate bias voltage -0.8 to +0.3v rf i nput 13 dbm thermal r esistance (channel to die bottom) 61.6 c/ w channel temperature 180 c s torage temperature -65 c to +150 c o perating temperature -55 c to +85 c drain bias current ( i dd1) 100m a drain bias current ( i dd2) 200ma die packaging information [1] s tandard a lternate gp-1 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
l inear & p ower a m pl ifiers - chi p 3 3 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad n umber f unction description i nterface s chematic 1 rfin this pad is a c coupled and matched to 50 o hms. 2, 4 vgg1, vgg2 gate control voltage for the amplifer, adjust to achieve i dd total = 240m a 10m a . s ee assembly diagram for required external components. 3, 5 vdd1, vdd2 drain s upply voltage for the amplifer. s ee assembly diagram for required external components. 6 rfo ut this pad is a c coupled and matched to 50 o hms. die bottom g n d die bottom must be connected to rf /dc ground. pad descriptions hmc-aph634 v00.0110 gaas hemt mmic medium power amplifier, 81 - 86 ghz
linear & power a m pl ifiers - chi p 3 3 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com n ote 1: bypass caps should be 100 p f (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifer n ote 2: best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. assembly diagram hmc-aph634 v00.0110 gaas hemt mmic medium power amplifier, 81 - 86 ghz
l inear & p ower a m pl ifiers - chi p 3 3 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: a ll bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning sys - tems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with a u s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die a ttach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die a ttach: a pply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. a ll bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. a ll bonds should be as short as possible, less than 12 mils (0.31 mm). 0.05mm (0.002) thic k gaas mmic ribbon bond rf gr ound plane 0.1 27mm (0.005) thic k alumina thin f ilm substrat e 0.07 6mm (0.003) f igur e 1. hmc-aph634 v00.0110 gaas hemt mmic medium power amplifier, 81 - 86 ghz
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