bso303p h opti mos ? -p small-signal-transistor features ? dual p-channel in so8 ? enhancement mode ? logic level ? 150c operating temperature ? qualified according jedec for target applications ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit 10 secs steady state continuous drain current 1) i d t c =25 c -8.2 -7.0 a t c =70 c -6.6 -5.8 pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =-8.2 a, r gs =25 ? mj gate source voltage v gs v power dissipation p tot t a =25 c w operating and storage temperature t j , t stg c esd class jesd22-a114 hbm soldering temperature iec climatic category; din iec 68-1 55/150/56 -55 ... 150 20 1b (500v - 1kv) 2 260 c value 97 -32.8 v ds -30 v r ds(on),max 21 m ? i d -8.2 a product summary type package marking bso303p h pg-dso- 8 303p so 8 packing dry lead free yes halogen free yes 32 v gs =-10v v gs =-4.5v rev. 1.3 page 1 2010-02-10
bso303p h parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - soldering point r thjs - - 50 k/w smd version, device on pcb: r thja minimal footprint, t< 10s 110 minimal footprint, steady state 150 6 cm 2 cooling area 1) t<10s - - 62.5 6 cm 2 cooling area 1), steady state --80 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250a -30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-100 a -1 -1.5 -2 zero gate voltage drain current i dss v ds =-30 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-30 v, v gs =0 v, t j =150 c - -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v - - -100 na drain-source on-state resistance r ds(on) v gs =-4.5 v, i d =-6.6 a -2532mw v gs =-10 v, i d =-8.2 a -1721 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-6.6 a 11 27 - s 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air; t 10 sec. values 2.) see figure3 for more detailed information rev. 1.3 page 2 2010-02-10
bso303p h parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1785 2678 pf output capacitance c oss - 510 765 reverse transfer capacitance c rss - 425 638 turn-on delay time t d(on) -1117ns rise time t r -1320 turn-off delay time t d(off) -5583 fall time t f -3959 gate char g e characteristics 3) gate to source charge q gs --5-6nc gate to drain charge q gd - -14 -20 gate charge total q g - -36 -49 gate plateau voltage v plateau - -2.7 - v reverse diode diode continous forward current i s - - -2.2 a diode direct current, pulsed i sm - - -32.8 diode forward voltage v sd v gs =0 v, i f =-8.2 a, t j =25 c - -0.9 -1.3 v reverse recovery time t rr v r =-15 v, i f =| i s |, d i f /d t =100 a/s -2436ns reverse recovery charge q rr -1319nc t c =25 c values v gs =0 v, v ds =-25 v, f =1 mhz v dd =-15 v, v gs =- 10 v, i d =-1 a, r g =6 ? v dd =-24 v, i d =-8.2 a, v gs =0 to 10 v rev. 1.3 page 3 2010-02-10
bso303p h 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); | v gs | 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c 1) ; d =0 z thjs =f( t p ) parameter: t p parameter: d = t p / t 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 2 10 1 10 0 10 -1 10 -2 0.01 0.1 1 10 100 1000 0.1 1 10 100 -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 2 10 1 10 0 10 -1 10 -2 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 t p [s] z thjs [k/w] 0 0.5 1 1.5 2 2.5 0 40 80 120 160 t a [c] p tot [w] 0 2 4 6 8 0 40 80 120 160 t a [c] -i d [a] rev. 1.3 page 4 2010-02-10
bso303p h 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -3 v -3.5 v -4 v -4.5 v -5 v -6 v -8 v -10 v 0 10 20 30 40 50 60 70 0 10203040 -i d [a] r ds(on) [m ? ] 25 c 150 c 0 10 20 30 01234 -v gs [v] -i d [a] 0 10 20 30 40 0102030 -i d [a] g fs [s] -2.5 v -3.0 v -3.5 v -4.0 v -5 v -4.5 v -6 v -10 v 0 10 20 30 40 50 60 0246810 -v ds [v] -i d [a] rev. 1.3 page 5 2010-02-10
bso303p h 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-8.2 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-100 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 10 12 14 16 18 20 22 24 26 28 30 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] ciss coss crss 10 4 10 3 10 2 100 1000 10000 0 8 16 24 -v ds [v] c [pf] typ. min. max. 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] 25 c, typ 150 c, typ 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 2.5 3 -v sd [v] i f [a] rev. 1.3 page 6 2010-02-10
bso303p h 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =-8.2 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage v br(dss) =f( t j ); i d =-250 a -6 v -15 v -24 v 0 2 4 6 8 10 0 10203040 -q gate [nc] -v gs [v] 26 27 28 29 30 31 32 33 34 35 -60 -20 20 60 100 140 180 t j [c] -v br(dss) [v] 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 2 10 1 10 0 t av [s] -i av [a] rev. 1.3 page 7 2010-02-10
bso303p h package outline pg-dso-8: outline rev. 1.3 page 8 2010-02-10
bso303p h published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.3 page 9 2010-02-10
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