bd677/a/679/a/681 bd678/a/680/a/682 complementary silicon power darlington transistors n stmicroelectronics preferred salestypes n complementary pnp - npn devices n monolithic darlington configuration n integrated antiparallel collector-emitter diode application n linear and switching industrial equipment description the bd677, bd677a, bd679, bd679a and bd681 are silicon epitaxial-base npn power transistors in monolithic darlington configuration mounted in jedec sot-32 plastic package. they are intended for use in medium power linar and switching applications the complementary pnp types are bd678, bd678a, bd680, BD680A and bd682 respectively. ? internal schematic diagram r 1 typ.= 7k w r 2 typ.= 230 december 2000 absolute maximum ratings symbol parameter value uni t npn bd677/a bd679/a bd681 pnp bd678/a bd680/a bd682 v cbo collector-base voltage (i e =0) 60 80 100 v v ceo collector-emitter voltage (i b =0) 60 80 100 v v ebo emitter-base voltage (i c =0) 5 v i c collector current 4 a i cm collector peak current 6 a i b base current 0.1 a p tot total dissipation at t c 25 o c 40 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c for pnp types voltage and current values are negative. 3 2 1 sot-32 1/6
thermal data r thj-case r t hj- amb thermal resistance junction-case max thermal resistance junction-ambient max 3.12 100 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e =0) v ce =ratedv cbo v ce =ratedv cbo t c =100 o c 0.2 2 ma ma i ceo collector cut-off current (i b =0) v ce = half rated v ceo 0.5 ma i ebo emitter cut-off current (i c =0) v eb =5v 2 ma v ceo(sus ) * collector-emitter sustaining voltage i c =50ma for bd677/677a/678/678a for bd679/679a/680/680a for bd681/682 60 80 100 v v v v ce(sat) * collector-emitter saturation voltage for bd677/678/679/680/681/682 i c =1.5a i b =30ma for bd677a/678a/679a/680a i c =2a i b =40ma 2.5 2.8 v v v be * base-emitter voltage for bd677/678/679/680/681/682 i c =1.5a v ce =3v for bd677a/678a/679a/680a i c =2a v ce =3v 2.5 2.5 v v h fe * dc current gain for bd677/678/679/680/681/682 i c =1.5a v ce =3v for bd677a/678a/679a/680a i c =2a v ce =3v 750 750 h fe small signal current gain i c =1.5a v ce =3v f=1mhz 1 * pulsed: pulse duration = 300 ms, duty cycle 1.5 % safe operating areas derating curve bd677/677a/678/678a/679/679a/680/680a/681/682 2/6
dc current gain (npn type) collector-emitter saturation voltage (npn type) base-emitter saturation voltage (npn type) dc current gain (pnp type) collector-emitter saturation voltage (pnp type) base-emitter saturation voltage (pnp type) bd677/677a/678/678a/679/679a/680/680a/681/682 3/6
base-emitter on voltage (npn type) base-emitter on voltage (pnp type) freewheel diode forward voltage (npn types) freewheel diode forward voltage (pnp types) bd677/677a/678/678a/679/679a/680/680a/681/682 4/6
dim. mm inch min. typ. max. min. typ. max. a 7.4 7.8 0.291 0.307 b 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 c 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 d 15.4 16.0 0.606 0.629 e 2.2 0.087 e3 4.15 4.65 0.163 0.183 f 3.8 0.150 g 3 3.2 0.118 0.126 h 2.54 0.100 c1 h2 0016114 sot-32 (to-126) mechanical data bd677/677a/678/678a/679/679a/680/680a/681/682 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com bd677/677a/678/678a/679/679a/680/680a/681/682 6/6
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