baw 101 oct-08-1999 1 silicon switching diode array ? electrically insulated high-voltage medium-speed diodes vps05178 2 1 3 4 32 eha07008 1 4 type marking pin configuration package baw 101 jps 1 = c1 2 = c2 3 = a2 4 = a1 sot-143 maximum ratings parameter symbol unit value v diode reverse voltage v r 300 peak reverse voltage v rm 300 i f 250 forward current ma peak forward current i fm 500 a i fs 4.5 surge forward current, t = 1 s total power dissipation , t s 35c 350 mw p tot t j c junction temperature 150 storage temperature t st g -65 ... 150 thermal resistance 470 k/w junction - ambient 1) r thja r thjs junction - soldering point 330 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
baw 101 oct-08-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit typ. max. min. dc characteristics v - 300 - v (br) breakdown voltage i (br) = 100 a forward voltage i f = 100 ma 1.3 - - v f na reverse current v r = 250 v i r 150 - - a 50 - - i r reverse current v r = 250 v, t a = 150 c ac characteristics pf - - 6 c d diode capacitance v r = 0 v, f = 1 mhz s reverse recovery time i f = 10 ma, i r = 10 ma, r l = 100 ? , measured at i r = 1ma t rr - 1 - test circuit for reverse recovery time ehn00019 f d.u.t. oscillograph pulse generator: t p = 100ns, d = 0.05, t r = 0.6ns, r i = 50 ? oscillograph: r = 50 ? , t r = 0.35ns, c 1pf
baw 101 oct-08-1999 3 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 0 ehb00102 baw 101 f a t ; t s 50 100 ?c 150 t as t 100 200 ma 300 reverse current i r = f ( t a ) v r = 250v baw 101 ehb00104 max. typ. 2 10 5 10 1 4 3 5 10 10 5 r 5 na 10 0 50 100 t a ? c 150 forward current i f = f ( v f ) t a = 25c 0 1.0 2.0 baw 101 ehb00103 a v f v 5 5 -3 10 -2 10 10 -1 0 10 f
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