050-7169 rev - 10-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com APT5040KFLL 500v 17a 0.400 ? ? ? ? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? to-220 package ? fast recovery body diode power mos 7 r fredfet g d s to-220 characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 8.5a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 500 0.40 250 1000 100 35 APT5040KFLL 500 17 68 30 40 250 2 -55 to 150 300 17 16 425
dynamic characteristics APT5040KFLL 050-7169 rev - 10-2003 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 0.1 0.3 0.7 0.9 0.05 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 17a) peak diode recovery dv / dt 5 reverse recovery time (i s = -i d 17a, di / dt = 100a/s, v r = 333v) reverse recovery charge (i s = -i d 17a, di / dt = 100a/s, v r = 333v) peak recovery current (i s = -i d 17a, di / dt = 100a/s, v r = 333v) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 17 68 1.3 15 t j = 25c 212 280 t j = 125c 272 350 t j = 25c 853 1110 t j = 125c 1299 1690 t j = 25c 7.8 10 t j = 125c 912 symbol r jc r ja min typ max .50 tbd unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 2.94mh, r g = 25 ? , peak i l = 17a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 17a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 250v i d = 17a @ 25c resistive switching v gs = 15v v dd = 250v i d = 17a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 333v, v gs = 15v i d = 17a, r g = 5 ? inductive switching @ 125c v dd = 333v v gs = 15v i d = 17a, r g = 5 ? min typ max 1006 234 16 26 8 14 9 4 18 2 73 26 198 47 unit pf nc ns j 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 9a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration
050-7169 rev - 10-2003 APT5040KFLL typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v gs =15 &10v 4v 4.5v 5.5v 5v 6.5v 6v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0 2 4 6 8 101214161820 02468 0510152025 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 40 30 20 10 0 18 16 14 12 10 8 6 4 2 0 2.5 2.0 1.5 1.0 0.5 0.0 35 30 25 20 15 10 5 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 i d = 8.5a v gs = 10v normalized to v gs = 10v @ 8.5a 0.216 c/w 0.284 c/w 0.00367 j/ c 0.0553 j/ c power (watts) rc model junction temp ( c) case temperature ( c)
APT5040KFLL 050-7169 rev - 10-2003 typical preformance curves t c =+25c t j =+150c single pulse operation here limited by r ds (on) c rss c oss c iss v ds =100v 10ms 1ms 100s v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 500 0 10 20 30 40 50 0 5 10 15 20 25 30 35 40 0.3 0.5 0.7 0.9 1.1 1.3 1.5 68 10 5 1 .1 16 14 12 10 8 6 4 2 0 v ds =250v v ds =400v i d = 17a t j =+150c t j =+25c 4,000 1,000 100 10 100 50 10 5 1 i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 333v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 333v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. v dd = 333v r g = 5 ? t j = 125c l = 100h 0 5 10 15 20 0 5 10 15 20 0 4 8 12 16 20 0 5 1015202530 35404550 v dd = 333v i d = 17a t j = 125c l = 100h e on includes diode reverse recovery. 30 25 20 15 10 5 0 250 200 150 100 50 0 50 40 30 20 10 0 300 250 200 150 100 50 0
050-7169 rev - 10-2003 APT5040KFLL typical performance curves apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt15df60b v ce figure 20, inductive switching test circuit v dd g to-220ac package outline source 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 14.73 (.580) 12.70 (.500) 1.01 (.040) 3-plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 4.82 (.190) 3.56 (.140) 1.39 (.055) 0.51 (.020) 4.08 (.161) dia. 3.54 (.139) dimensions in millimeters and (inches) 16.51 (.650) 14.23 (.560) 6.35 (.250) max. gate drain 6.85 (.270) 5.85 (.230) 1.77 (.070) 3-plcs. 1.15 (.045) 2.92 (.115) 2.04 (.080) 3.42 (.135) 2.54 (.100) 0.50 (.020) 0.41 (.016) 5.33 (.210) 4.83 (.190) drain 90% gate voltage drain voltage drain current 90% t d(off) 0 10% t f t j = 125 c switching energy t j = 125 c drain voltage drain current gate voltage switching energy 10 % 90% t d(on) t r 5 % 10 % 5 %
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