regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
sep.2000 type name voltage class f 5.0 max 4.4 5.0 max 12.5 min 3.9 max 1.3 1.25 1.25 circumscribe circle f 0.7 1 3 2 outline drawing dimensions in mm jedec : to-92 2 1 3 1
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3 cathode anode gate mitsubishi semiconductor thyristor ? cr03am low power use non-insulated type, glass passivation type cr03am application leakage protector, timer, gas ignitor ] 1. with gate to cathode resistance r gk =1k w . symbol i t (rms) i t (av) i tsm i 2 t p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight conditions commercial frequency, sine half wave, 180 conduction, t a =47 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a a 2 s w w v v a c c g ratings 0.47 0.3 20 1.6 0.5 0.1 6 6 0.3 C40 ~ +110 C40 ~ +125 0.23 ?i t (av) ........................................................................ 0.3a ?v drm ..............................................................400v/600v ?i gt ......................................................................... 100 m a symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 dc off-state voltage ] 1 voltage class unit v v v v v v maximum ratings 8 400 500 320 400 500 320 12 600 800 480 600 800 480
sep.2000 3v dc i gs i gt 6v dc 60 w v gt 21 tut 1k w r gk a3 a2 v1 a1 switch 1 : i gt measurement switch 2 : v gt measurement (inner resistance of voltage meter is about 1k w ) ] 3. i gt , v gt measurement circuit. switch mitsubishi semiconductor thyristor ? cr03am low power use non-insulated type, glass passivation type electrical characteristics symbol i rrm i drm v tm v gt v gd i gt i h r th (j-a) test conditions t j =110 c, v rrm applied t j =110 c, v drm applied, r gk =1k w t a =25 c, i tm =4a, instantaneous value t j =25 c, v d =6v, i t =0.1a ] 3 tj=110 c, v d =1/2v drm , r gk =1k w t j =25 c, v d =6v, i t =0.1a ] 3 t j =25 c, v d =12v, r gk =1k w junction to ambient unit ma ma v v v m a ma c/w typ. 1.5 parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current holding current thermal resistance limits min. 0.2 1 max. 0.1 0.1 1.8 0.8 100 ] 2 3 180 ] 2. if special values of i gt are required, choose at least two items from those listed in the table below. (example: ab, bc) b 20 ~ 50 c 40 ~ 100 item i gt ( m a) a 1 ~ 30 the above values do not include the current flowing through the 1k w resistance between the gate and cathode. performance curves 3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? t a = 25 c 10 0 23 5710 1 8 4 23 5710 2 44 12 16 20 6 2 10 14 18 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
sep.2000 mitsubishi semiconductor thyristor ? cr03am low power use non-insulated type, glass passivation type 10 2 10 ? 10 0 10 1 10 1 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 7 5 3 2 57 23 57 10 ? 10 2 23 57 23 5 23 5 7 v fgm = 6v v gt = 0.8v (t j = 25 c) i gt = 100 a (t j = 25 c) p gm = 0.5w p g(av) = 0.1w v gd = 0.2v i fgm = 0.3a 23 10 ? 5710 ? 23 5710 ? 23 5710 0 200 0 80 100 120 140 160 180 40 60 20 23 10 0 5710 1 23 5710 2 23 5710 3 60?0?0 0 2 0 4 0 8 0 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 120 typical example 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 ?0 ?0 ?0 20 80 140120 0.2 0.5 0.9 060 40 100 160 120 60 40 20 140 100 80 0 0 0.2 0.40.1 0.3 0.5 q = 30 60 120 90 180 q 360 resistive, inductive loads natural convection 0.3 0.2 0.1 0.4 0 0.50.40 0.1 0.2 0.3 0.5 q = 30 60 120 90 180 q 360 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature ( c) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/w) time (s) gate characteristics gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c ) gate trigger current (t j = 25 c ) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature ( c) average on-state current (a) distribution i gt (25 c) = 35 a typical example
sep.2000 mitsubishi semiconductor thyristor ? cr03am low power use non-insulated type, glass passivation type 160 120 60 40 20 140 100 80 0 120?0 04080 ?0 20 60 100 r gk = 1k w typical example 23 10 ? 5710 0 23 5710 1 23 5710 2 160 0 80 100 120 140 40 60 20 t j = 110 c typical example 0.3 0.2 0.1 0.5 0.4 0 0 0.2 0.40.1 0.3 0.5 q = 30 60 120 90 180 q q 360 resistive loads 0.3 0.2 0.1 0.5 0.4 0 0 0.2 0.40.1 0.3 0.5 q = 30 60 90 180 270 dc 120 q 360 resistive, inductive loads 160 120 60 40 20 140 100 80 0 0.50 0.2 0.40.1 0.3 q 360 q = 30 120 180 dc 270 60 90 natural convection resistive, inductive loads 160 120 60 40 20 140 100 80 0 0 0.2 0.40.1 0.3 0.5 60 120 180 q = 30 90 q q 360 resistive loads natural convection maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature ( c) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature ( c) average on-state current (a) breakover voltage vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) breakover voltage ( r gk = rk w ) breakover voltage ( r gk = 1k w ) breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c )
sep.2000 mitsubishi semiconductor thyristor ? cr03am low power use non-insulated type, glass passivation type 23 10 0 5710 1 23 5710 2 23 5710 3 200 180 0 80 100 120 160 140 40 60 20 t j = 25 c r gk = 1k w t j = 110 c 10 2 234 10 0 5710 1 24 35710 2 10 4 10 3 7 5 4 3 2 7 5 4 3 2 23 10 ? 10 ? 57 2 3 5710 0 23 5710 1 0 100 200 300 400 500 160 120 60 40 20 140 100 80 0 120?0 04080 ?0 20 60 100 typical example 60?0?0?0 0 2 0 4 0 8 0 100 120 140 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? r gk = 1k w holding current vs. junction temperature holding current (ma) junction temperature ( c) holding current vs. gate to cathode resistance holding current (ma) gate to cathode resistance (k w ) gate trigger current vs. gate current pulse width gate trigger current ( a) gate trigger pulse width ( s) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = vv/ s ) breakover voltage ( dv/dt = 1v/ s ) repetitive peak reverse voltage vs. junction temperature junction temperature ( c) 100 (%) repetitive peak reverse voltage (t j = t c ) repetitive peak reverse voltage (t j = 25 c ) distribution i gt (25 c) = 35 a typical example v d = 12v, t j = 25 c # 2 # 1 typical example i gt (25 c) i h (1k w ) # 1 10 a 1.0ma # 2 26 a 1.1ma t j = 25 c typical example i gt (dc) # 1 16 a # 2 65 a # 1 # 2
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