tsm1n60s 600v n - channel power mosfet 1 / 8 version: c 07 to - 92 general description the tsm1n60 s is used an advanced termination scheme to provide enhanced voltage - blocking capability without degrading performance over time. in addition, this advanced mosfet is designed to withstand high energy in avalanche and commutation modes. the new energy efficient design also offers a drain - to - source diode with a fast recovery time. designed for high voltage, high speed switching applications in power supplies, converters and pwm motor contro ls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. features robust high voltage termination avalanche energy specified diode is characterized for use in bridge circuits source to drain diode recovery time comparable to a discrete fast recovery diode. i dss and v ds(on) specified at elevated temperature ordering informat ion part no. package packing tsm1n60sct b0 to - 92 1kpcs / bulk tsm1n60sct a3 to - 92 2kpcs / ammo absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 6 00 v gate - source voltage v gs 30 v continuous drain current i d 0.3 a pulsed drain current i dm 1.2 a continuous source current (diode conduction) a,b i s 1 a single pulse drain to source avalanche energy (v dd = 100v, v gs =10v, i as =2a, l=10mh, r g =25 ) eas 50 mj total power dissipation @ t c = 25 o c p d tot 3 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c lead temperature (1/8 from case) t l 10 s pin definition : 1. gate 2. drain 3. source block diagram n - channel mosfet product sum mary v ds (v) r ds(on) () i d (a) 600 11 @ v gs =10v 0.3
tsm1n60s 600v n - channel power mosfet 2 / 8 version: c 07 thermal performance parameter symb ol limit unit thermal resistance - junction to ambient r? ja 125 o c/w thermal resistance - junction to case r? jc 50 o c/w thermal resistance - junction to lead r? jl 40 o c/w note s : surface mounted on fr4 board t 10sec electrical specifications ( ta= 25 o c , unless otherwise noted) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 600 -- -- v drain - source on - state resistance v gs = 10v, i d = 0.3a r ds(on) -- 11 13 gate threshold voltage v d s = v gs , i d = 250ua v gs(th) 2.0 -- 4.0 v zero gate voltage drain current v ds = 600v, v gs = 0v i dss -- -- 10 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na forward transconductance v ds 50v, i d = 0.3a g fs -- 5 -- s diode forward voltage i s = 1a, v gs = 0v v sd -- -- 1.5 v dynamic b total gate charge q g -- 4.5 6 gate - source charge q gs -- 1.1 -- gate - drain charge v ds = 400v, i d = 1a, v gs = 10v q gd -- 2 -- nc input capacitance c iss -- 155 200 ou tput capacitance c oss -- 20 26 reverse transfer capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c rss -- 3 4 pf switching c turn - on delay time t d(on) -- 10 30 turn - on rise time t r -- 20 50 turn - off delay time t d(off) -- 25 45 turn - off fall time v gs = 10v, i d = 1a, v ds = 30 0 v, r g = 6 t f -- 24 60 ns notes: a. p ulse test: pulse width <=300us, duty cycle <=2% b. for design reference only, not subject to production testing. c . sw itching time is essentially independent of operating temperature.
tsm1n60s 600v n - channel power mosfet 3 / 8 version: c 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resi stance vs. junction temperature source - drain diode forward voltage
tsm1n60s 600v n - channel power mosfet 4 / 8 version: c 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage maximum safe operating area normalized thermal tr ansient impedance, junction - to - ambient
tsm1n60s 600v n - channel power mosfet 5 / 8 version: c 07 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm1n60s 600v n - channel power mosfet 6 / 8 version: c 07 diode reverse recovery time test circuit & waveform
tsm1n60s 600v n - channel power mosfet 7 / 8 version: c 07 to - 92 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to - 92 dim ension millimeters inches dim min max min max a 4.30 4.70 0.169 0.185 b 4.30 4.70 0.169 0.185 c 13.53 (typ) 0.532 (typ) d 0.39 0.49 0.015 0.019 e 1.18 1.28 0.046 0.05 0 f 3.30 3.70 0.130 0.146 g 1.27 1.31 0.050 0.051 h 0.33 0.43 0.013 0.017
tsm1n60s 600v n - channel power mosfet 8 / 8 version: c 07 notice specifications of the products displayed herei n are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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