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mil-prf-19500/605a 17 december 1997 superseding mil-s-19500/605 10 november 1992 performance specification sheet semiconductor device, field effect radiation hardened (total dose only) transistors, n-channel, silicon types 2n7292, 2n7294, 2n7296, and 2n7298 jantxvm, d, r, h and jansm, d and r this specification is approved for use by all depart- ments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for an n-channel, enhancement-mode, mosfet, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. two levels of product assurance are provided for each device type specified in mil-prf-19500. 1.2 physical dimensions . see figure 1 (similar to to-254). 1.3 maximum ratings . t a = +25 c unless otherwise specified. | | | | | | | | | | | | | | type | p t 1 / | p t | v ds | v dg | v gs | i d1 2 / | i d2 | i s | i dm | t j | v iso | | | | | | | | | | | | and | | | | t c | t a | | | | t c | t c | 2 / | | t stg | 70,000 | | | = +25 c | = +25 c | | | | = +25 c | = 100 c | | | | feet | | | | | | | | | | | | | altitude | | | | | | | | | | | | | | | | w | w | v dc | v dc | v dc | a dc | a dc | a dc | a (pk) | c | v dc | | | | | | | | | | | | | | | 2n7292 | 125 | 2.5 | 100 | 100 | 20 | 25.0 | 20.0 | 25.0 | 75 | -55 | n/a | | 2n7294 | | | 200 | 200 | | 23.0 | 15.0 | 23.0 | 69 | to | n/a | | 2n7296 | | | 250 | 250 | | 17.0 | 11.0 | 17.0 | 51 | | 250 | | 2n7298 | | | 500 | 500 | | 9.0 | 6.0 | 9.0 | 27 | +150 | 500 | 1 / derate linearly 1.0 w/ c for t c > +25 c; p t = t jm - t c r q jc 2 / ) t at r )x( r ( t - t = i jmax ds jc c j d on q max | beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving | | this document should be addressed to: commander, defense supply center columbus, attn: dscc-vat, 3990 east | | broad st., columbus, oh 43216-5000, by using the addressed standardization document improvement proposal | | (dd form 1426) appearing at the end of this document or by letter. | amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. the documentation and process conversion measures necessary to comply with this revision shall be completed by 17 march 1998. inch-pound
mil-prf-19500/605a 1.4 primary electrical characteristics at t c = +25 c . | | | | | | | | | | | | | | max r ds(on) 1 / | | | | | type | min | v gs(th)1 | max i dss1 | | r q jc | i as | e as | | | v (br)dss | | v gs = 0 | v gs = 10 v dc | max | = i dm | | | | | v ds 3 v gs | | | | | at | | | v gs = 0 | | v ds = 80 percent | | | | | | | | | i d = .250 ma dc | of rated v ds | t j = +25 c | t j = +125 c | | | i as | | | i d | | | at i d2 | at i d2 | | | | | | = 1.0 ma dc | | | | | | | | | | | | | | | | | | | | v dc | v dc | m a dc | ohm | ohm | c/w | a(pk) | mj | | | | min max | | | | | | | | 2n7292 | 100 | 2.0 4.0 | 25 | o.070 | 0.140 | 1.00 | 75 | 281 | | 2n7294 | 200 | | | 0.115 | 0.253 | | 69 | 238 | | 2n7296 | 250 | | | 0.185 | 0.444 | | 51 | 130 | | 2n7298 | 500 | | | 0.615 | 1.60 | | 27 | 36 | 1 / pulsed (see 4.5.1). 2. applicable documents 2.1 government documents . 2.1.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification military mil-prf-19500 - semiconductor devices, general specification for. standard military mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the standardization document order desk, building 4d, 700 robbins avenue, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 associated specification . the individual item requirements shall be in accordance with mil-prf-19500 and as specified herein. 3.2 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500. e as - single pulse avalanche energy capability i as - rated avalanche current, non-repetitive v (iso) - source pin to case isolation voltage 2
mil-prf-19500/605a 3 | | | | | dimensions | | ltr | | | | | inches | millimeters | | | | | | | | | min | max | min | max | | | | | | | | bl | .530 | .550 | 13.46 | 13.97 | | | | | | | | ch | .249 | .260 | 6.33 | 6.60 | | | | | | | | ld | .035 | .045 | 0.89 | 1.14 | | | | | | | | ll | .520 | .560 | 13.21 | 14.22 | | | | | | lo | .150 bsc | .3.81 bsc | | | | | | ls | .150 typ | .3.81 typ | | | | | | | | mhd | .139 | .149 | 3.34 | 3.78 | | | | | | | | mho | .665 | .685 | 16.90 | 17.40 | | | | | | | | tl | .790 | .800 | 20.07 | 20.32 | | | | | | | | tt | .040 | .050 | 1.02 | 1.28 | | | | | | | | tw | .535 | .545 | 13.59 | 13.84 | | | | | term 1 | drain | | | | | term 2 | source | | | | | term 3 | gate | notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. all terminals are isolated from case. 4. the preferred measurements used herein are the metric units. however, this transistor was designed using inch-pound units of measurement. in case of conflicts between the metric and inch-pound units, the inch-pound units shall be the rule. 5. in accordance with ansi y14.5m, diameters are equivalent to f x symbology. 6. die to base is beo isolated, terminals to case ceramic (al 2 o 3 ) isolated. figure 1. dimensions and configuration (t0-254) .
mil-prf-19500/605a 4 3.3 interface requirements and physical dimensions . the interface requirements and physical dimensions shall be as specified in mil- prf-19500, and figure 1 (t0-254aa) herein. 3.3.1 lead material and finish . lead material shall be kovar or alloy 52; a copper core or plated core is permitted. lead finish shall be solderable as defined in mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition documents (see 6.2). 3.3.2 internal construction . multiple chip construction is not be permitted to meet the requirements of this specification. 3.4 marking . marking shall be in accordance with mil-prf-19500. at the option of the manufacturer, marking of the country of origin may be omitted from the body of the transistor, but shall be retained on the initial container. 3.5 electrostatic discharge protection . the devices covered by this specification require electrostatic discharge protection. 3.5.1 handling . mos devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. however, the following handling practices are recommended (see 3.5). a. devices should be handled on benches with conductive handling devices. b. ground test equipment, tools, and personnel handling devices. c. do not handle d evices by the leads. d. store devices in conductive foam or carriers. e. avoid use of plastic, rubber, or silk in mos areas. f. maintain relative humidity above 50 percent if practical. g. care should be exercised during test and troubleshooting to app ly not more than maximum rated voltage to any lead. h. gate must be terminated to source, r 100 kilohms, whenever bias voltage is to be applied drain to source. 3.6 electrical performance characteristics . unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i. 3.7 electrical test requirements . the electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.8 qualification . devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.2 ). 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3) c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in accordance with mil-prf-19500, and as specified herein. alternate flow is allowed for qualification inspection in accordance with figure 4 of mil-prf-19500. 4.2.1 group e inspection . group e inspection shall be conducted in accordance with mil-prf-19500, and table ix herein.
mil-prf-19500/605a 5 4.3 screening (jantx, jantxv, and jans levels only) . screening shall be in accordance with tables iv of mil-prf-19500, and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. | screen (see | measurement | | table iv of | | | | mil-prf-19500) | jans level | jantx and jantxv levels | | | | | | 1 / | method 3161 (see 4.5.3) | method 3161 (see 4.5.3) | | | | | | | | | | 1/ | gate stress test (see 4.5.5) | gate stress test (see 4.5.5) | | | | | | 1/ | method 3470, e as test (see 4.5.4) | method 3470, e as test (see 4.5.4) | | | | | | 2 / | subgroup 2 of table i herein | subgroup 2 of table i herein | | | | | | | | | | 9 | i gss , i dss1 | not applicable | | | | | | | | | | 10 | mil-std-750, method 1042 | mil-std-750, method 1042 | | | test condition b | test condition b | | | | | | | | | | 11 | i gssf1 , i gssr1 , i dss1 , r ds(on) , v gs(th) | i gssf1 , i gssr1 , i dss1 , r ds(on) , | | | subgroup 2 of table i herein; | v gs(th) | | | | subgroup 2 of table i herein | | | d i gssf 1 = 20 na dc or 100 percent of | | | | initial value, whichever is greater. | | | | | | | | d i gssr1 = 20 na dc or 100 percent of | | | | initial value, whichever is greater. | | | | | | | | d i dss1 = 25 m a dc or 100 percent of | | | | initial value, whichever is greater. | | | | | | | 12 | mil-std-750, method 1042, test | mil-std-750, method 1042, condition a or | | | condition a | t a = +175 c and t = 48 hours min 3 / | | | | | | | | | | 13 | subgroups 2 and 3 of table i herein; | subgroups 2 and 3 of table i herein. | | | d i gssf1 = 20 na dc or 100 percent of | d i gssf1 = 20 na dc or 100 percent of | | | initial value, whichever is greater. | initial value, whichever is greater. | | | | | | | d i gssr1 = 20 na dc or 100 percent of | d i gssr1 = 20na dc or 100 percent of | | | initial value, whichever is greater. | initial value, whichever is greater. | | | | | | | d i dss1 = 25 m a dc or 100 percent of | d i dss1 = 25 m a dc or 100 percent of | | | initial value, whichever is greater. | initial value, whichever is greater. | | | | | | | d r ds(on)1 = 20 percent of initial value. | d r ds(on)1 = 20 percent of initial value. | | | | | | | d v gs(th)1 = 20 percent of initial value. | d v gs(th)1 = 20 percent of initial value. | | | | | 1 / shall be performed any time after screen 10. 2 / shall be performed after e as test, method 3161, and gate stress test. 3 / use of this accelerated screening option requires a 1,000 hour life test in accordance with applicable group e, subgroup 2 life test, and end-points specified herein to be provided to the qualifying activity for review and acceptance.
mil-prf-19500/605a 6 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500, and as specified herein. alternate flow is allowed for quality conformance inspection in accordance with figure 4 of mil-prf-19500. 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500 and table i herein. (endpoint electrical measurements shall be in accordance with the applicable inspections of table i, group a, subgroup 2 herein.) 4.4.2 group b inspection . group b inspection shall be conducted in accordance with the conditions specified for subgroup testing in table via (jans) and table vib (jantx and jantxv) of mil-prf-19500, and as follows. electrical measurements (end points) shall be in accordance with the applicable inspections of table i, group a, subgroup 2 herein. 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500 . subgroup method condition 3 1051 condition g, 100 cycles. 4 1042 condition d, 2,000 cycles. no heat sink or forced air cooling on the device shall be permitted during the on cycle. t on = 30 seconds minimum. 5 1042 condition a; v ds = 100 percent of rated; t a = +175 c, t = 120 hours, or t a = +150 c, t = 120 hours minimum. read and record v br(dss) (pre and post) at i d = 1 ma; read and record i dss (pre and post) in accordance with table i, subgroup 2 5 1042 condition b; v gs = 100 percent of rated; t a = +175 c; t = 24 hours minimum. 6 3161 see 4.5.2 4.4.2.2 group b inspection, table vib (jantx and jantxv) of mil-prf-19500 . subgroup method condition 2 1051 test condition g, 25 cycles. 3 1042 the heating cycle shall be 30 seconds minute minimum. 5 ---- not applicable 6 ---- no t applicable 4.4.3 group c inspection . group c inspection shall be conducted in accordance with the conditions specified for subgroup testing in table vii of mil-prf-19500, and as follows. electrical measurements (end points) shall be in accordance with the applicable inspections of table i, group a, subgroup 2 herein. 4.4.3.1 group c inspection, table vii of mil-prf-19500 . subgroup method condition 2 2036 terminal strength, test condition a, weight = 10 lbs., t = 15 sec. 6 1042 test condition d, 6,000 cycles; 1 cycle = 30 sec. min. 4.5 methods of inspection . methods of inspection shall be as specified in appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement shall be as specified in section 4 of mil-std-750.
mil-prf-19500/605a 7 4.5.2 thermal resistance . thermal resistance measurements shall be performed in accordance with method 3161 of mil-std-750. the maximum limit of r q jc(max) = 1.00 c/w. the following parameter measurements shall apply: a. measuring cur rent (i m ) - - - - - - - - - - - - - - 10 ma b. drain heating current (i h ) - - - - - - - - - - - - 4 a c. heating time (t h ) - - - - - - - - - - - - - - - - - steady-state (see mil-std-750, method 3161 for definition) d. drain-source heating voltage (v h ) - - - - - - - - - 25 v e. measurement time delay (t md ) - - - - - - - - - - - 30 to 60 m s f. sample window time (t sw ) - - - - - - - - - - - - - 10 m s maximum
mil-prf-19500/605a 8 table i. group a inspection . | | | | | | | inspection 1 / | mil-std-750 | symbol | limits | units | | | | | | | | | | | method | conditions | | min | max | | | | | | | | | | | subgroup 1 | | | | | | | | | | | | | | | | visual and mechanical | 2071 | | | | | | | inspection | | | | | | | | | | | | | | | | subgroup 2 | | | | | | | | | | | | | | | | breakdown voltage, | 3407 | v gs = 0 v; i d = 1 ma dc, | v (br)dss | | | | | drain to source | | bias condition c | | | | | | | | | | | | | | 2n7292 | | | | 100 | | v dc | | 2n7294 | | | | 200 | | v dc | | 2n7296 | | | | 250 | | v dc | | 2n7298 | | | | 500 | | v dc | | | | | | | | | | gate to source | 3403 | v ds 3 v gs , | v gs(th)1 | 2.0 | 4.0 | v dc | | voltage (threshold) | | i d = 1 ma dc | | | | | | | | | | | | | | gate current | 3411 | v gs = +20 and -20 v dc, | i gss1 | | 100 | na dc | | | | bias condition c, v ds = 0 | | | | | | | | | | | | | | drain current | 3413 | v gs = 0 v dc, | i dss1 | | 25 | m a dc | | | | bias condition c | | | | | | | | v ds = 80 percent of | | | | | | | | rated v ds | | | | | | | | | | | | | | static drain to source | 3421 | v gs = 10 v dc, condition a, | r ds(on)1 | | | | | "on"-state | | pulsed (see 4.5.1), id = id2 | | | | | | resistance | | | | | | | | | | | | | | | | 2n7292 | | | | | 0.070 | w | | 2n7294 | | | | | 0.115 | w | | 2n7296 | | | | | 0.185 | w | | 2n7298 | | | | | 0.615 | w | | | | | | | | | | static drain to source | 3421 | v gs = 10 v dc, condition a, | r ds(on)2 | | | | | "on"-state | | pulsed (see 4.5.1), id = id1 | | | | | | resistance | | | | | | | | | | | | | | | | 2n7292 | | | | | 0.074 | w | | 2n7294 | | | | | 0.121 | w | | 2n7296 | | | | | 0.194 | w | | 2n7298 | | | | | 0.646 | w | | | | | | | | | | forward voltage | 4011 | pulsed (see 4.5.1), id = id1 | v sd | | | | | | | v gs = 0 v dc | | | | | | 2n7292 | | | | | 1.8 | v dc | | 2n7294 | | | | | 1.8 | v dc | | 2n7294 | | | | | 1.8 | v dc | | 2n7298 | | | | | 1.8 | v dc | see footnote at end of table.
mil-prf-19500/605a 9 table i. group a inspection - continued. | | | | | | | inspection 1 / | mil-std-750 | symbol | limits | units | | | | | | | | | | | method | conditions | | min | max | | | | | | | | | | | subgroup 3 | | | | | | | | | | | | | | | | high temperature | | t c = t j = +125 c | | | | | | operation | | | | | | | | | | | | | | | | gate current | 3411 | v gs = +20 and -20 v dc, | i gss2 | | 200 | na dc | | | | bias condition c, v ds = 0 | | | | | | | | | | | | | | drain current | 3413 | v gs = 0 v dc, | i dss2 | | 1.0 | ma dc | | | | bias condition c | | | | | | | | | | | | | | | | v ds = 100 percent of | | | | | | | | rated v ds | | | | | | | | | | | | | | | | v ds = 80 percent of | i dss3 | | 0.25 | ma dc | | | | rated v ds | | | | | | | | | | | | | | static drain to source | 3421 | v gs = 10 v dc, pulsed | r ds(on )3 | | | | | "on"-state | | (see 4.5.1), id = id2 | | | | | | resistance | | | | | | | | | | | | | | | | 2n7292 | | | | | 0.140 | w | | 2n7294 | | | | | 0.253 | w | | 2n7296 | | | | | 0.444 | w | | 2n7298 | | | | | 1.60 | w | | | | | | | | | | gate to source | 3403 | v ds 3 v gs , i d = 1 ma dc | v gs(th)2 | 1.0 | | v dc | | voltage (threshold) | | | | | | | | | | | | | | | | low temperature | | t c = t j = -55 c | | | | | | operation | | | | | | | | | | | | | | | | gate to source | 3403 | v ds 3 v gs , i d = 1 ma dc | v gs(th)3 | | 5.0 | v dc | | voltage (threshold) | | | | | | | | | | | | | | | | | | | | | | | see footnote at end of table.
mil-prf-19500/605a 10 table i. group a inspection - continued. | | | | | | | inspection 1 / | mil-std-750 | symbol | limits | units | | | | | | | | | | | method | conditions | | min | max | | | | | | | | | | | subgroup 4 | | | | | | | | | | | | | | | | switching time test | 3472 | i d = i d1 , v gs = 10 v dc, | | | | | | | | r g = 25 w , v dd = 50 percent | | | | | | | | of rated v ds | | | | | | turn-on delay time | | | t d(on) | | | | | 2n7292 | | | | | 134 | ns | | 2n7294 | | | | | 156 | ns | | 2n7296 | | | | | 114 | ns | | 2n7298 | | | | | 148 | ns | | | | | | | | | | rise time | | | t r | | | | | | | | | | | | | 2n7292 | | | | | 628 | ns | | 2n7294 | | | | | 510 | ns | | 2n7296 | | | | | 162 | ns | | 2n7298 | | | | | 196 | ns | | | | | | | | | | turn-off delay time | | | t d(off) | | | | | | | | | | | | | 2n7292 | | | | | 642 | ns | | 2n7294 | | | | | 574 | ns | | 2n7296 | | | | | 990 | ns | | 2n7298 | | | | | 800 | ns | | | | | | | | | | fall time | | | t f | | | | | | | | | | | | | 2n7292 | | | | | 490 | ns | | 2n7294 | | | | | 280 | ns | | 2n7296 | | | | | 256 | ns | | 2n7298 | | | | | 180 | ns | | | | | | | | | | subgroup 5 | | | | | | | | | | | | | | | | safe operating area | 3474 | see figure 3, 4, 5 | | | | | | test | | t p = 10 ms minimum | | | | | | | | v ds = 80 percent of max | | | | | | | | rated v ds (v ds 200) | | | | | | | | | | | | | | electrical | | see table vi, steps 1, 2, 3, | | | | | | measurements | | 4, 5, 6, and 7 | | | | | | | | | | | | | | subgroup 6 | | | | | | | | | | | | | | | | not applicable | | | | | | | | | | | | | | | | | | | | | | | see footnote at end of table.
mil-prf-19500/605a 11 table i. group a inspection - continued. | | | | | | | inspection 1 / | mil-std-750 | symbol | limits | units | | | | | | | | | | | method | conditions | | min | max | | | | | | | | | | | subgroup 7 | | | | | | | | | | | | | | | | gate charge | 3471 | condition b | | | | | | | | | | | | | | on-state gate charge | | v dd = 0.5 bv dss | q g(on) | | | | | | | i d = i d1 | | | | | | 2n7292 | | v gs 20v | | | 314 | nc | | 2n7294 | | i gs1 = i gs2 | | | 298 | nc | | 2n7296 | | | | | 264 | nc | | 2n7298 | | | | | 264 | nc | | | | | | | | | | gate to source charge | | | q gs | | | | | | | | | | | | | 2n7292 | | | | | 46 | nc | | 2n7294 | | | | | 66 | nc | | 2n7296 | | | | | 48 | nc | | 2n7298 | | | | | 56 | nc | | | | | | | | | | gate to drain charge | | | q gd | | | | | | | | | | | | | 2n7292 | | | | | 164 | nc | | 2n7294 | | | | | 144 | nc | | 2n7296 | | | | | 124 | nc | | 2n7298 | | | | | 126 | nc | | | | | | | | | | reverse recovery time | 3473 | di/dt = 100 a/ m s, | | | | | | | | v dd 30 v, id = id1 | | | | | | | | | | | | | | 2n7292 | | | t rr | | 1400 | ns | | 2n7294 | | | | | 1700 | ns | | 2n7296 | | | | | 2000 | ns | | 2n7298 | | | | | 2300 | ns | | | | | | | | | 1 / for sampling plan, see mil-prf-19500.
mil-prf-19500/605a 12 table iv. group d inspection . | | | | | | | | inspection | mil-std-750 | symbol | preirradiation | postirradiation | units | | 1 / | | | | limits | limits | | | | method | conditions | | | | | | | | | | m, d, and r | m, d, and r | | | | | | | | | | | | | | | | | min | max | min | max | | | | | | | | | | | | | subgroup 1 | | | | | | | | | | | | | | | | | | | | n/a | | | | | | | | | | | | | | | | | | | | subgroup 2 | | t c = +25 c | | | | | | | | | | | | | | | | | | steady state | 1019 | 2 / 3 / | | | | | | | | total dose | | | | | | | | | | irradiation | | | | | | | | | | | | | | | | | | | | end point | | | | | | | | | | electricals | | | | | | | | | | | | | | | | | | | | breakdown | 3407 | v gs = 0; | v br(dss) | | | | | | | voltage, | | i d = 1 ma | | | | | | | | drain to | | bias cond. c | | | | | | | | source | | | | | | | | | | | | | | | | | | | | 2n7292 | | | | 100 | | 100 | | v dc | | 2n7294 | | | | 200 | | 200 | | v dc | | 2n7296 | | | | 250 | | 250 | | v dc | | 2n7298 | | | | 500 | | 500 | | v dc | | | | | | | | | | | | gate to | 3403 | v ds 3 v gs | v gs(th)1 | | | | | | | source | | i d = 1 ma | | | | | | | | voltage | | | | | | | | | | (threshold) | | | | | | | | | | | | | | | | | | | | 2n7292 | | | | 2.0 | 4.0 | 2.0 | 4.0 | v dc | | 2n7294 | | | | 2.0 | 4.0 | 2.0 | 4.0 | v dc | | 2n7296 | | | | 2.0 | 4.0 | 2.0 | 4.0 | v dc | | 2n7298 | | | | 2.0 | 4.0 | 2.0 | 4.0 | v dc | | | | | | | | | | | | gate current | 3411 | v gs = 20 v, v ds = 0 | i gssf1 | | 100 | | 100 | na dc | | | | bias cond. c | | | | | | | | | | | | | | | | | | gate current | 3411 | v gs = 20 v, v ds = 0 | i gssr1 | | -100 | | -100 | na dc | | | | bias cond. c | | | | | | | | | | | | | | | | | | drain | 3413 | v gs = 0 | i dss1 | | | | | | | current | | bias cond. c | | | | | | | | | | v ds = 80 percent | | | | | | | | | | of rated v ds | | | | | | | | | | (preirradiation) | | | | | | | | 2n7292 | | | | | 25 | | 25 | m a dc | | 2n7294 | | | | | 25 | | 25 | m a dc | | 2n7296 | | | | | 25 | | 25 | m a dc | | 2n7298 | | | | | 25 | | 25 | m a dc | see footnotes at end of table.
mil-prf-19500/605a 13 table iv. group d inspection - continued. | | | | | | | | inspection | mil-std-750 | symbol | preirradiation | postirradiation | units | | 1 / | | | | limits | limits | | | | method | conditions | | | | | | | | | | m, d, and r | m, d, and r | | | | | | | | | | | | | | | | | min | max | min | max | | | | | | | | | | | | | subgroup 2 - | | | | | | | | | | continued | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | static drain | 3421 | v gs = 10 v | r ds(on)1 | | | | | | | to source | | cond. a | | | | | | | | on-state | | pulsed | | | | | | | | resistance | | see 4.5.1 | | | | | | | | | | i d = i d2 | | | | | | | | | | | | | | | | | | 2n7292 | | | | | 0.070 | | 0.070 | w | | 2n7294 | | | | | 0.115 | | 0.115 | w | | 2n7296 | | | | | 0.185 | | 0.185 | w | | 2n7298 | | | | | 0.615 | | 0.615 | w | | | | | | | | | | | | drain source | 3405 | v gs = 10v | v ds(on) | | | | | | | on state | | i d = i d1 | | | | | | | | voltage | | cond. a | | | | | | | | | | pulsed | | | | | | | | | | see 4.5.1 | | | | | | | | 2n7292 | | | | | 1.84 | | 1.84 | v dc | | 2n7294 | | | | | 2.78 | | 2.78 | v dc | | 2n7296 | | | | | 3.30 | | 3.30 | v dc | | 2n7298 | | | | | 5.81 | | 5.81 | v dc | | | | | | | | | | | | | | | | | | | | | 1 / for sampling plan see mil-prf-19500. 2 / inspection requires all subgroup 2 (group d) measurements after exposure to both of the following insitu bias conditions: v gs = 10 v; v ds = 0 v gs = 0 v; v ds = 80 percent of rated v ds 3 / each bias condition requires a separate total dose sample.
mil-prf-19500/605a 14 table v. group e inspection (all quality levels) for qualification only . | | | | | inspection | mil-std-750 | qualification | | | | | and large lot | | | method | conditions | quality | | | | | conformance | | | | | inspection | | | | | | | subgroup 1 | | | 12 devices | | | | | c = 0 | | temperature cycling | 1051 | -55 c to +150 c, 500 cycles | | | (air to air) | | | | | | | | | | hermetic seal | 1071 | | | | | | | | | fine leak | | | | | gross leak | | | | | | | | | | electrical measurements | | see table i, subgroup 2 herein | | | | | | | | subgroup 2 1 / | | | 12 devices | | | | | c = 0 | | steady-state reverse bias | 1042 | condition a: 1,000 hours | | | | | | | | electrical measurements | | see table i, subgroup 2 herein | | | | | | | | steady-state gate bias | 1042 | condition b: 1,000 hours | | | | | | | | electrical measurements | | see table i, subgroup 2 herein | | | | | | | | subgroup 3 | | | | | | | | | | not applicable | | | | | | | | | | subgroup 4 | | | | | | | | 12 devices | | thermal resistance | 3161 | r q jc = 1.0 c/w maximum. see 4.5.2 | c = 0 | | | | | | 1 / a separate sample for each test shall be pulled.
mil-prf-19500/605a 15 figure 2. thermal response curves
mil-prf-19500/605a 16 1 ms 10 ms 100 ms v ds , drain-to-source voltage (v) 100 10 1 0.1 1 10 100 operation in this area may be limited by r ds(on) t c = +25 0 c 2n7292 100 m m s figure 3. safe operating area graphs .
mil-prf-19500/605a 17 100 10 1 100 10 1 0.1 600 v ds , drain-to-source voltage (v) operation in this area may be limited by rds (on) 100 m m s 1ms 10ms 100ms tc = 25 o c 2n7294 figure 3. safe operating area graphs - continued.
mil-prf-19500/605a 18 100 m m s 1ms 10ms 100ms 100 10 1 100 10 1 0.1 v ds , drain-to-source voltage (v) 700 operation in this area may be limited by rds (on) tc = 25 o c 2n7296 figure 3. safe operating area graphs - continued.
mil-prf-19500/605a 19 100 10 1 100 10 1 0.1 v ds , drain-to-source voltage (v) 1000 100ms 10ms 1ms 100 m m s t c = 25 o c operation in this area may be limited by rds (on) 2n7298 figure 3. safe operating area graphs - continued.
mil-prf-19500/605a 20 4.5.3 thermal response ( d v sd measurement) . the delta v sd measurement shall be performed in accordance with method 3161 of mil-std-750. the delta v sd conditions (i h and v h ) and maximum limit shall be derived by each vendor from the thermal response curves (see figure 2) and shall be specified in the certificate of conformance prior to qualification. the following parameter measurements shall apply: a. measuring current (i m ) - - - - - - - - - - - - - - 10 ma b. drain heating current (i h ) - - - - - - - - - - - - 4 a minimum c. he ating time (t h ) - - - - - - - - - - - - - - - - - 100 ms d. drain-source heating voltage (v h ) - - - - - - - - - 25 v e. measurement time delay (t md ) - - - - - - - - - - - 30 to 60 m s f. sample window time (t sw ) - - - - - - - - - - - - - 10 m s maximum 4.5.4 single pulse avalanche energy (e as ) . a. i as = i dm b. l = .1 mh c. e as = 1/2 li as 2 +10 c d. initial junction temperature = +25 c, -5 c 4.5.5 gate stress test . a. v gs = 30 v minimum b. t = 250 m s minimum 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of material is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd-rom products, or by contacting the responsible packaging activity. 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-19500. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 notes . the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents should specify the following: a. title, number, and date of the specification. b. issue of dodiss to be cited in the solicitation and, if re quired, the specific issue of individual documents referenced (see 2.1). c. lead finish may be specified (see 3.3.1). d. type designation and product assurance level.
mil-prf-19500/605a 21 6.3 substitution information . devices covered by this specification are substitutable for the manufacturer's and user's part or identifying number (pin). this information in no way implies that manufacturer's pin's are suitable for the military pin. | | | | preferred types | commercial types | | | | | 2n7292 | frf150 1 / | | 2n7294 | frf250 1 / | | 2n7296 | frf254 1 / | | 2n7298 | frf450 1 / | | | | | | | 1 / frfxxxm, frfxxxd frfxxxr, 3 k, 10 k, 100 k rad(si) 6.4 changes from previous issue . marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. 6.5 qualification . with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified products list qpl-19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supply center columbus, dscc-vqe, columbus, oh 43216. concluding material custodians: preparing activity: army - cr dla - cc navy - ec air force - 17: (project 5961-1931) nasa - na review activities navy - td air force - 70, 80
mil-prf-19500/605a 22 standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/605a 2. document date 17 december 1997 3. document title semiconductor device, field effect radiation hardened (total dose only) transistors, n-channel, silicon types 2n7292, 2n7294, 2n7296, and 2n7298 jantxvm, d, r, h and jansm, d and r 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) (1) commercial (2) dsn (if applicable) 7. date submitted (yymmdd) 8. preparing activity a. name alan barone b. telephone (include area code) (1) commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil c. address (include zip code) defense supply center columbus attn: dscc-vat columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense quality and standardization office 5203 leesburg pike, suite 1403, falls church, va 22041-3466 telephone (703) 756-2340 dsn 289-2340 dd form 1426, oct 89 previous editions are obsolete 198/290

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