3-161 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 1999 ha-2544/883 video operational ampli?r july 1994 file number 511028-883 file number 3699 pinouts ha-2544/883 (cerdip) top view ha-2544/883 (clcc) top view ha-2544/883 (metal can) top view 1 2 3 4 8 7 6 5 nc v+ out bal + bal -in +in v- - 4 5 6 7 8 9101112 13 3212019 15 14 18 17 16 nc bal nc nc nc nc v- nc bal nc nc v+ nc out nc + nc -in nc +in nc - nc out -in v- bal +in v+ bal 2 4 6 1 3 7 5 8 + - case tied to v- description the ha-2544/883 is a fast, unity gain stable, monolithic op amp designed to meet the needs required for accurate reproduction of video or high speed signals. it offers high voltage gain (3.5kv/v min, 6kv/v typ), wide unity gain bandwidth of 45mhz minimum and phase margin of 65 degrees (open loop). built from high quality dielectric isolation, the ha-2544/883 is another addition to the intersil series of high speed, wideband op amps, and offers true video performance combined with the versatility of an op amp. the primary features of the ha-2544/883, include wide band- width, 150v/ s (typ) slew rate, < 0.04db differential gain error, < 0.11 degrees differential phase error and gain ?tness of just 0.15db at 3.58mhz and 4.43mhz, therefore proving to be suf?ient for video ampli?ation. high performance and low power requirements are met with a supply current of only 10ma typically and 12ma over the full temperature range. uses of the ha-2544/883 range from video test equipment guidance systems, radar displays and other precise imaging systems where stringent gain and phase requirements have previously been met with costly hybrids and discrete circuitry. the ha-2544/883 will also be used in non-video systems requiring high speed signal conditioning such as data acquisi- tion systems, medical electronics, specialized instrumentation and communication systems. ordering information part number temperature range package ha2-2544/883 -55 o c to +125 o c 8 pin can ha4-2544/883 -55 o c to +125 o c 20 lead ceramic lcc ha7-2544/883 -55 o c to +125 o c 8 lead cerdip features this circuit is processed in accordance to mil-std- 883 and is fully conformant under the provisions of paragraph 1.2.1. wide unity gain bandwidth . . . . . . . . . . . 45mhz (min) high slew rate . . . . . . . . . . . . . . . . . . . . . 100v/ s (min) low supply current. . . . . . . . . . . . . . . . . . . 12ma (max) differential gain error . . . . . . . . . . . . . . . . 0.04db (max) differential phase error. . . . . . . . . . . . . 0.11 deg. (max) gain flatness at 3.58mhz or 4.43mhz . . . 0.15db (max) fast settling time (10v to 0.1%). . . . . . . . . 120ns (typ) applications video systems video test equipment radar displays imaging systems pulse ampli?rs signal conditioning circuits data acquisition systems
3-162 speci?ations ha-2544/883 absolute maximum ratings thermal information voltage between v+ and v- terminals . . . . . . . . . . . . . . . . . . . . 35v differential input voltage (note 2) . . . . . . . . . . . . . . . . . . . . . . . . 6v voltage at either input terminal . . . . . . . . . . . . . . . . . . . . . . v+ to v- peak output current (< 10% duty cycle) . . . . . . . . . . . . . . . . 40ma junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 o c storage temperature range . . . . . . . . . . . . . . . . . -65 o c to +150 o c esd rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000v lead temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . +300 o c thermal resistance ja jc cerdip package . . . . . . . . . . . . . . . . . . . 115 o c/w 28 o c/w ceramic lcc package . . . . . . . . . . . . . . 65 o c/w 15 o c/w metal can package . . . . . . . . . . . . . . . . . 155 o c/w 67 o c/w package power dissipation limit at +75 o c for t j +175 o c cerdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mw ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54w metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mw package power dissipation derating factor above +75 o c cerdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mw/ o c ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mw/ o c metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mw/ o c caution: stresses above those listed in ?bsolute maximum ratings?may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not im plied. operating conditions operating temperature range . . . . . . . . . . . . . . . . -55 o c to +125 o c operating supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15v v incm 1/2 (v+ - v-) r l 2k ? table 1. dc electrical performance characteristics device tested at: v supply = 15v, r source = 10 ? , r load = 500k ? , c load 10pf, v out = 0v, unless otherwise speci?d. parameters symbol conditions group a subgroups temperature limits units min max input offset voltage v io v cm = 0v 1 +25 o c -15 15 mv 2, 3 +125 o c, -55 o c -20 20 mv input bias current +i b v cm = 0v, +r s = 1k ? , -r s = 10 ? 1 +25 o c -15 15 a 2, 3 +125 o c, -55 o c -20 20 a -i b v cm = 0v, +r s = 10 ? , -r s = 1k ? 1 +25 o c -15 15 a 2, 3 +125 o c, -55 o c -20 20 a input offset current i io v cm = 0v, +r s = 1k ? , -r s = 1k ? 1 +25 o c-22 a 2, 3 +125 o c, -55 o c-3 3 a common mode range +cmr v+ = 5v, v- = -25v 1 +25 o c10-v 2, 3 +125 o c, -55 o c10 - v -cmr v+ = 25v, v- = -5v 1 +25 o c - -10 v 2, 3 +125 o c, -55 o c - -10 v large signal voltage gain +a vol v out = 0v and +8v, r l = 1k ? 4 +25 o c 3.5 - kv/v 5, 6 +125 o c, -55 o c 2.5 - kv/v -a vol v out = 0v and -8v, r l = 1k ? 4 +25 o c 3.5 - kv/v 5, 6 +125 o c, -55 o c 2.5 - kv/v common mode rejection ratio +cmrr ? v cm = +10v, v+ = +5v, v- = -25v, v out = -10v 1 +25 o c75-db 2, 3 +125 o c, -55 o c75 - db -cmrr ? v cm = -10v, v+ = +25v, v- = -5v, v out = +10v 1 +25 o c75-db 2, 3 +125 o c, -55 o c75 - db output voltage swing +v out r l = 1k ? 1 +25 o c10-v 2, 3 +125 o c, -55 o c10 - v -v out r l = 1k ? 1 +25 o c - -10 v 2, 3 +125 o c, -55 o c - -10 v spec number 511028-883
3-163 spec number 511028-883 speci?ations ha-2544/883 output current +i out v out = -9v 1 +25 o c25-ma -i out v out = +9v 1 +25 o c - -25 ma quiescent power supply current +i cc v out = 0v, i out = 0ma 1 +25 o c - 12 ma 2, 3 +125 o c, -55 o c - 12 ma -i cc v out = 0v, i out = 0ma 1 +25 o c -12 - ma 2, 3 +125 o c, -55 o c -12 - ma power supply rejection ratio +psrr ? v sup = 10v, v+ = +10v, v- = -15v, v+ = +20v, v- = -15v 1 +25 o c70-db 2, 3 +125 o c, -55 o c70 - db -psrr ? v sup = 10v, v+ = +15v, v- = -10v, v+ = +15v, v- = -20v 1 +25 o c70-db 2, 3 +125 o c, -55 o c70 - db offset voltage adjustment +v io adj note 1 1 +25 o cv io -1 - mv -v io adj note 1 1 +25 o cv io +1 - mv note: 1. offset adjustment range is [v io (measured) 1mv] minimum referred to output. this test is for functionality only to assure adjustment through 0v. 2. to achieve optimum ac performance, the input stage was designed without protective diode clamps. exceeding the maximum differ ential input voltage results in reverse breakdown to the base-emitter junction of the input transistors and probable degradation of th e input parameters especially v os , i os and noise. table 2. ac electrical performance characteristics device tested at: v supply = 15v, r source = 10 0? , r load = 1k ? , c load = 10pf, v out = 1v/v, unless otherwise speci?d. parameters symbol conditions group a subgroups temperature limits units min max slew rate +sr v out = -3v to +3v 7 +25 o c 100 - v/ s -sr v out = +3v to -3v 7 +25 o c 100 - v/ s table 3. electrical performance characteristics device characterized at: v supply = 15v, r load = 1k ? , c load = 10pf, a v = 1v/v, unless otherwise speci?d. parameters symbol conditions notes temperature limits units min max differential gain da v r s = 50 ? , r l = 1k ? , f o = 3.58mhz and 4.43mhz 1, 5, 6, 8 +25 o c - 0.04 db differential phase d ? r s = 50 ? , r l = 1k ? , f o = 3.58mhz and 4.43mhz 1, 6, 8 +25 o c - 0.11 degrees unity gain bandwidth ugbw v o = 200mv rms , f at -3db 1 +25 o c 45 - mhz gain flatness ? a v v o = 200mv rms , f o = 5mhz 1, 6 +25 o c -0.15 0.15 db v o = 200mv rms , f o = 10mhz 1, 6 +25 o c -0.35 0.35 db table 1. dc electrical performance characteristics (continued) device tested at: v supply = 15v, r source = 10 ? , r load = 500k ? , c load 10pf, v out = 0v, unless otherwise speci?d. parameters symbol conditions group a subgroups temperature limits units min max
3-164 spec number 511028-883 speci?ations ha-2544/883 full power bandwidth fpbw v peak = 1v 1, 2 +25 o c 15.9 - mhz v peak = 5v 1, 2 +25 o c 3.2 - mhz minimum closed loop stable gain clsg r l = 1k ? , c l 1pf 1 -55 o c to +125 o c 1 - v/v rise and fall time t r v out = 0v to +200mv 1, 4 +25 o c - 15 ns t f v out = 0v to -200mv 1, 4 +25 o c - 15 ns overshoot +os v out = 0v to +200mv 1 +25 o c - 20 % -os v out = 0v to -200mv 1 +25 o c - 20 % settling time t s open loop 1 +25 o c - 150 % output resistance r out open loop 1 +25 o c-40 ? quiescent power consumption pc v out = 0v, i out = 0ma 1, 3 -55 o c to +125 o c - 360 mw notes: 1. parameters listed in table 3 are controlled via design or process parameters and are not directly tested at ?al production. these param- eters are lab characterized upon initial design release, or upon design changes. these parameters are guaranteed by characteriz ation based upon data from multiple production runs which re?ct lot to lot and within lot variation. 2. full power bandwidth guarantee based on slew rate measurement using fpbw = slew rate/(2 v peak ). 3. quiescent power consumption based upon quiescent supply current test maximum. (no load on outputs.) 4. measured between 10% and 90% points. 5. a d (%) = 6. the video parameter specifications will degrade as the output load resistance decreases. 7. c-l gain and c-l delay were less than the resolution of the test equipment used which is 0.1db and 7ns, respectively. 8. test signal used is 200mv rms at each frequency on a 0 and 1 volt offset. for adequate test repeatability, a minimum warm-up of 2 minutes is suggested. table 4. electrical test requirements mil-std-883 test requirements subgroups (see tables 1 and 2) interim electrical parameters (pre burn-in) 1 final electrical test parameters 1 (note 1), 2, 3, 4, 5, 6, 7 group a test requirements 1, 2, 3, 4, 5, 6, 7 groups c and d endpoints 1 note: 1. pda applies to subgroup 1 only. table 3. electrical performance characteristics (continued) device characterized at: v supply = 15v, r load = 1k ? , c load = 10pf, a v = 1v/v, unless otherwise speci?d. parameters symbol conditions notes temperature limits units min max 10 a d db () 20 ------------------------- -1 100
3-165 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/o r speci?ations at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see web site http://www.intersil.com ha-2544/883 die characteristics die dimensions: 80 x 64 x 19 mils 1 mils 2030 x 1630 x 483 m 25.4 m metallization: type: al, 1% cu thickness: 16k ? 2k ? glassivation: type: nitride (si3n4) over silox (sio2, 5% phos.) silox thickness: 12k ? 2k ? nitride thickness: 3.5k ? 1.5k ? worst case current density: 7.0 x 10 4 a/cm 2 substrate potential (powered up): v- transistor count: 44 process: bipolar dielectric isolation metallization mask layout ha-2544/883 v+ out bal bal -in +in v- spec number 511028-883
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