regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
mitsubishi igbt CY20AAJ-8 nch igbt for strobe flasher sep. 2001 mitsubishi igbt CY20AAJ-8 nch igbt for strobe flasher CY20AAJ-8 outline drawing dimensions in mm application strobe flasher for camera sop-8 v ces ............................................................................... 400v i cm ................................................................................... 130a drive voltage ..................................................................... 4v maximum ratings (tc = 25 c) 5.0 0.4 1.27 1.8 max. 6.0 4.4 ?? ?? ??? ? ???? emitter gate collector ??? ? ???? 400 6 8 130 C 40 ~ +150 C 40 ~ +150 v ge = 0v v ce = 0v v ce = 0v, tw = 10s c m = 400 f see figure1 collector-emitter voltage gate-emitter voltage peak gate-emitter voltage collector current (pulsed) junction temperature storage temperature v v v a c c v ces v ges v gem i cm t j t stg symbol parameter conditions ratings unit
mitsubishi igbt CY20AAJ-8 nch igbt for strobe flasher sep. 2001 electrical characteristics (tj = 25 c) v (br) ces i ces i ges v ge (th) v a a v 450 10 0.1 1.5 collector-emitter breakdown voltage collector-emitter leakage current gate-emitter leakage current gate-emitter threshold voltage symbol unit parameter test conditions limits min. typ. max. i c = 1ma, v ge = 0v v ce = 400v, v ge = 0v v ge = 6v, v ce = 0v v ce = 10v, i c = 1ma figure1. maximum pulse collector current 0 40 80 120 160 08 246 c m = 400 f pulse collector current i cm (a) gate-emitter voltage v ge (v) application example r g v ce v cm c m vtrig v g igbt ixe + C vtrigtrigger signal v g igbte gate voltage i xe xe tube current recommended operation conditions maximum operation conditions v cm = 330v v cm = 350v i cp = 120a i cp = 130a c m = 300 fc m = 400 f v ge = 5v notice 1. gate drive voltage during on-state must be applied to satisfy the rating of maximum pulse collector current. and peak reverse gate current during turn-off must become less than 0.1a. (in general, when r g (off) = 30 ? , it is satisfied.) notice 2. igbt has mos structure and its gate is insulated by thin silicon oxide. so please handle carefully not to give static electricity. notice 3. the operation life should be endured 5,000 shots under the charge current (ixe 130a : full luminescence condition) of main condenser (c m = 400 f). repetitive period under the full luminescence conditions is over 3 seconds. notice 4. total gate operation time must be applied within 5,000 hours.
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