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| savantic semiconductor product specification silicon npn power transistors BUS13 d escription with to-3 package high voltage ,high speed applications converters inverters switching regulators motor controls pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 850 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 9 v i c collector current 15 a i cm collector current-peak 30 a i b base current 6 a i bm base current-peak 9 a p t total power dissipation t mb =25 175 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-mb thermal resistance from junction to mounting base 1.0 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUS13 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0; l=25mh 400 v v cesat collector-emitter saturation voltage i c =8a; i b =1.6a 1.5 v v besat base-emitter saturation voltage i c =8a; i b =1.6a 1.6 v i ces collector cut-off current v ce =ratedbv ceo ; v be =0 t c =125 1.0 4.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe dc current gain i c =2a ; v ce =5v 15 50 switching times t on turn-on time 1.0 s t s storage time 4.0 s t f fall time i c =8a; i b1 =- i b2 =1.6a 0.8 s savantic semiconductor product specification 3 silicon npn power transistors BUS13 package outline fig.2 outline dimensions |
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