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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD683 description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min) high dc current gain- : h fe = 500(min.)@ i c = 5a applications high voltage and high power switching applications. motor driver applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 600 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current-continuous 15 a i b b base current 2 a p c collector power dissipation @t c =25 150 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD683 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 5a; l= 10mh 400 v v ce( sat) collector-emitter saturation voltage i c = 10a; i b = 0.2a 2.0 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 0.2a 2.5 v i cbo collector cutoff current v cb = 600v; i e = 0 0.5 ma i ebo emitter cutoff current v eb = 5v; i c = 0 30 ma h fe-1 dc current gain i c = 5a; v ce = 5v 500 h fe-2 dc current gain i c = 15a; v ce = 5v 30 v ecf c-e diode forward voltage i f = 10a 3.0 v c ob output capacitance v cb = 50v, i e = 0; f test = 1mhz 100 pf switching times t on turn-on time 0.4 s t s storage time 15 s t f fall time v cc =150v; i b1 = -i b2 = 0.1a 3.0 s isc website www.iscsemi.cn |
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