tsh691 low cost 40mhz - 1ghz amplifier june 1998 . 28db gain @ 3v @ 450mhz . +13.5dbm output power (p1db) . bias pin for output power & ampli- fier disable . 50 w input/output matching 1 2 3 4 5 6 7 8 cc v vbias gnd rf in gnd rf out gnd gnd pin connections (top view) ? description tsh691 is a low cost rf amplifier consisted of 2 stages, designed in advanced bipolar process, fea- turing high performances. an external bias current adjust allows to tune the output power and also to set the amplifier in power-down mode. the tsh691 is intended to rf consumer equipments in ism band (remote controls, ask transmitters) where cost is sensitive d so8 (plastic micropackage) order codes part number temperature range package d TSH691ID -35, +85 o c ? 1/10
absolute maximum ratings symbol parameter value unit v cc1, v cc2, v bias supply voltages & bias voltage 5.5 v rf in rf input power +10 dbm rf out rf output power +21 dbm t oper operating free air temperature range -35 to +85 o c t stg storage temperature range -65 to +150 o c operating conditions symbol parameter value unit v cc1, v cc2, v bias supply voltages 1.5 to 5 v v bias bias voltage 0 to 6 v rf sr rf signal range 40 to 1000 mhz schematic diagram esd sensitive device handling precautions required tsh691 2/10
electrical characteristics t amb =25 o c, v cc &v bias = +2.7v, z l =50 w parameter tsh691 unit min. typ. max. supply current 46 ma s21 (v in = -20dbm, f = 450mhz) 20 23 30 db s21 (v in = -20dbm, f = 900mhz) 17 db output power 1db compression (f = 450mhz) 12 dbm 3rd order intercept point (f = 430mhz) 22 dbm s12 (reverse isolation @ f = 400mhz) -46 db s11 (input return loss @ f = 450mhz) -15 db s11 (input return loss @ f = 900mhz) -10 db noise figure @ f = 450mhz 4.5 db noise figure @ f = 900mhz 5.4 db r th(j-a) junction ambient thermal resistance for so8 package 140 180 o c/w all parameters with min. or max. figures are 100% tested. 123456 30 45 60 75 90 105 120 135 150 vcc (v) tamb ( c) rthmin rthmax right behaviour device overstressed so8 package thermal resistivity definition r th(j-a) junction ambient thermal resistance t j ( o c) maximum die juntion temperature (~ 150 o c) t amb ( o c) ambient temperature p d (w) maximum dissipated power (p d = 0.75 v cc ? i cc ) remarks the right behaviour is obtained when the follow- ing equation is fulfilled. t j -t amb =p d ? r th(j-a) tsh691 3/10
test conditions v cc1 ,v cc2 ,v bias = +2v, pin = -40dbm, t amb =25 o c freq s11 s21 s12 s22 mhz mag ang mag ang mag ang mag ang 40 0.642 -22.0 6.319 5.0 0.003 -126.5 0.715 -54.7 50 0.615 -25.7 6.406 7.1 0.008 170.7 0.631 -64.7 100 0.537 -41.3 7.643 7.7 0.002 70.1 0.369 -91.3 150 0.490 -55.6 9.353 3.1 0.004 -141.9 0.253 -100.9 200 0.464 -68.0 11.502 -5.7 0.007 -117.3 0.202 -100.9 250 0.428 -79.0 13.856 -18.0 0.003 162.3 0.203 -92.7 300 0.413 -92.1 16.229 -33.4 0.005 142.1 0.209 -87.6 350 0.373 -101.5 18.019 -51.2 0.008 101.4 0.263 -89.4 400 0.334 -106.7 19.110 -70.1 0.008 115.2 0.326 -99.7 450 0.312 -111.5 19.159 -90.3 0.008 169.9 0.382 -112.1 500 0.290 -112.5 18.154 -108.0 0.008 111.5 0.395 -122.9 550 0.302 -114.5 16.778 -124.8 0.010 92.1 0.425 -130.0 600 0.324 -118.2 15.075 -140.5 0.015 93.6 0.424 -139.6 650 0.335 -122.9 13.482 -153.6 0.011 109.6 0.427 -150.8 700 0.349 -129.6 11.992 -165.5 0.011 101.7 0.425 -159.0 750 0.368 -135.0 10.750 -177.2 0.019 82.4 0.414 -169.5 800 0.366 -142.1 9.453 173.4 0.011 79.5 0.413 -177.8 850 0.373 -147.9 8.598 165.0 0.015 60.2 0.432 176.2 900 0.374 -154.1 7.783 155.8 0.013 89.7 0.438 166.4 950 0.381 -159.0 7.117 146.7 0.017 111.3 0.447 160.8 1000 0.377 -165.8 6.500 138.9 0.013 82.2 0.462 155.1 typical scattering parameters (reference waves planes at package leads) tsh691 4/10
test conditions v cc1 ,v cc2 ,v bias = +3v, pin = -40dbm, t amb =25 o c freq s11 s21 s12 s22 mhz mag ang mag ang mag ang mag ang 40 0.616 -23.3 9.237 6.2 0.002 -135.8 0.733 -56.9 50 0.595 -27.0 9.402 7.9 0.005 -169.5 0.651 -67.7 100 0.513 -43.4 11.263 6.5 0.006 -153.8 0.381 -101.7 150 0.470 -57.7 13.566 0.9 0.006 94.5 0.227 -119.1 200 0.436 -71.1 16.434 -8.6 0.007 155.8 0.156 -117.5 250 0.402 -82.2 19.416 -21.3 0.007 154.1 0.134 -100.3 300 0.382 -95.0 22.265 -36.6 0.005 7.2 0.135 -75.7 350 0.343 -103.3 24.337 -53.7 0.008 40.6 0.193 -78.0 400 0.302 -109.7 25.564 -71.8 0.010 125.9 0.269 -86.1 450 0.279 -114.8 25.594 -91.2 0.008 167.1 0.316 -100.6 500 0.271 -114.0 24.292 -108.3 0.011 120.2 0.356 -111.0 550 0.280 -116.1 22.527 -124.7 0.013 101.0 0.396 -119.3 600 0.306 -119.8 20.511 -140.1 0.005 89.9 0.404 -131.3 650 0.315 -125.5 18.282 -153.2 0.006 107.2 0.400 -142.6 700 0.330 -131.1 16.311 -165.1 0.007 78.9 0.406 -151.6 750 0.333 -136.2 14.604 -177.1 0.012 84.5 0.398 -160.4 800 0.343 -142.5 12.860 173.6 0.017 76.0 0.399 -170.5 850 0.346 -148.0 11.668 165.1 0.014 90.8 0.411 -178.8 900 0.354 -155.1 10.579 156.0 0.018 75.6 0.413 170.9 950 0.347 -159.6 9.652 147.0 0.013 66.6 0.439 165.2 1000 0.355 -166.2 8.775 139.2 0.018 75.3 0.459 157.3 test conditions v cc1 ,v cc2 ,v bias = +4v, pin = -40dbm, t amb =25 o c freq s11 s21 s12 s22 mhz mag ang mag ang mag ang mag ang 40 0.614 -23.1 11.023 6.9 0.002 107.6 0.726 -54.4 50 0.590 -27.4 11.248 7.9 0.003 -111.3 0.646 -65.1 100 0.508 -44.6 13.262 4.5 0.004 -47.0 0.366 -97.6 150 0.465 -59.9 15.736 -2.0 0.006 -62.5 0.206 -110.4 200 0.429 -72.0 18.727 -11.5 0.003 97.7 0.130 -104.3 250 0.396 -83.4 21.837 -24.2 0.002 -135.5 0.108 -78.6 300 0.371 -94.7 24.804 -39.3 0.009 154.7 0.136 -56.7 350 0.335 -103.8 26.854 -56.0 0.006 135.2 0.191 -64.3 400 0.295 -109.9 28.077 -73.6 0.003 139.7 0.262 -75.2 450 0.275 -114.8 28.113 -92.5 0.010 97.0 0.321 -85.8 500 0.265 -114.8 26.710 -109.4 0.007 111.8 0.335 -98.2 550 0.282 -117.0 24.831 -125.5 0.007 93.8 0.389 -108.5 600 0.296 -120.3 22.620 -140.8 0.007 110.0 0.393 -121.0 650 0.314 -124.7 20.235 -154.1 0.005 85.1 0.402 -131.7 700 0.321 -131.5 18.081 -166.2 0.010 93.2 0.388 -143.9 750 0.334 -135.8 16.178 -178.0 0.012 106.1 0.390 -153.8 800 0.339 -143.8 14.235 172.5 0.010 74.1 0.377 -162.4 850 0.348 -149.4 12.941 164.1 0.014 57.9 0.392 -170.4 900 0.340 -157.5 11.693 154.9 0.014 80.2 0.402 179.5 950 0.352 -161.0 10.670 145.7 0.006 87.4 0.409 171.4 1000 0.341 -166.8 9.683 137.6 0.016 50.0 0.433 163.3 tsh691 5/10
figure 1 : typical 300mhz-1000mhz biasing circuit circuit description the tsh691 is 50 w input/outputinternallymatched from 300mhz to 1000mhz. due to its open-collec- tor structure, the output rf port must be tied to v cc2 . the pin 8 allows a bias current adjust to set the output power and the gain. the circuit is pack- aged in so8 for thermal dissipation considerations. matching within the 300-1000mhz band, although the circuit is matched, the output return loss can be improved by adding a serial inductor (l2) between the rf output and v cc2 (56nh @450mhz and 10nh @900mhz). below 300mhz, using the s-parame- ters matrix, specific input/outpu t matching net- works can be calculated to maximize electrical performances. dc blocking because input/output are respectively internal/ex- ternal biased, dc blocks (c1, c2) are recom- mended on both rf ports to guarantee a dc isolation from the next cells. above 500mhz, 100pf is suggested whereas below, 1nf is better and far below (less than 100mhz), 10nf is prefered. biasing the amplifier can operate in the range of 1,5v to 5v and offers a bias current adjust function (vbias pin) which enables the trimming of the rf output power (ab class amplifier) by tuning a series vari- able resistor (rbias). when vbias is wired to the v cc rail, the current consumptionis maximized getting the best linearity (a class amplifier) whereas biasing to ground, the ic is set in power down mode. for higher supply voltage than 4v to reach high output power, the serial resistor (r1) is strongly recommended to increase the efficiency of the amplifier and therefore reduce the thermal dissipa- tion of the circuit. decoupling as with any rf devices, the supply voltage decou- pling must be done carefully using a 1nf bypass capacitor (c3, c5) placed as close as possible to the device pins and could be also improved by adding a 150nh rf choke inductance (l1). con- cerning the vbias pin, a 10nf decoupling capacitor (c4) is recommended while placing on board is not critical. note that surface mounted devices (smd) components are prefered for rf applications due to the right behaviour in high frequencies while low inductor values (few 10nh) can be printed on board. applications information tsh691 6/10
100 200 300 400 500 600 700 800 900 1000 10 15 20 25 30 freq (mhz) gain (db) l2 =10nh (450mhz operation) vcc=vbias=3v -35 c +25 c v +85 c gain vs frequency (450mhz) 100 200 300 400 500 600 700 800 900 1000 -25 -20 -15 -10 -5 0 freq (mhz) s11 (db) vcc=vbias @ ta=+ 25 c l2=56nh (450mhz operation) 3v 4v 2v input return loss (450mhz) 100 200 300 400 500 600 700 800 900 1000 -25 -20 -15 -10 -5 0 freq (mhz) s11 (db) vcc=vbias @ ta=+25 c l2 =10nh (900mhz operation) 2v 3v 4v input return loss (900mhz) 100 200 300 400 500 600 700 800 900 1000 -25 -20 -15 -10 -5 0 freq (mhz) s21 (db) vcc=vbias @ ta=+ 25 c l2=56nh (450mhz operation) 2v 3v 4v output return loss (450mhz) 100 200 300 400 500 600 700 800 900 1000 -25 -20 -15 -10 -5 0 freq (mhz) s22 (db) vcc=vbias @ ta=+25 c l2=10nh (900mhz operation) 2v 3v 4v output return loss (900mhz) 100 200 300 400 500 600 700 800 900 1000 10 15 20 25 30 freq (mhz) gain (db) l2 =10nh (900mhz operation) vcc=vbias=3v -35 c +25 c v +85 c gain vs frequency (900mhz) tsh691 7/10
100 200 300 400 500 600 700 800 900 1000 -60 -50 -40 -30 -20 -10 0 freq (mhz) s12 (db) vcc=vbias=3v ta=+25 c l2=56nh l2=10nh reverse isolation vs frequency 1,5 2 2,5 3 3,5 4 0 5 10 15 20 vbias (v) p1db (dbm) ta=25 c l2 =10nh (900mhz operation) vcc = 4v vcc = 3v vcc = 2v 1db compression vs bias voltage -20 -15 -10 -5 0 0 5 10 15 20 pin (dbm) pout (dbm) vcc=vbias=3v l2 =10nh (900mhz operation) +85 c -35 c +25 c admission (900mhz) 0 0,5 1 1,5 2 2,5 3 0 20 40 60 0 2 4 6 vbias (v) icc total (ma) i bias (ma) vcc=3v, ta=+25 c pin = -40dbm icc total i bias supply current vs bias voltage tsh691 8/10
demonstration board : silk screen demonstration board : printed circuit board (available on request) demonstration board : diagram for 300mhz - 1000mhz operation tsh691 9/10
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publ ication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. order code : pm-so16.eps package mechanical data 8 pins - plastic micropackage (so) dim. millimeters inches min. typ. max. min. typ. max. a 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 a3 0.65 0.85 0.026 0.033 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.020 c1 45 o (typ.) d 4.8 5.0 0.189 0.197 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.150 0.157 l 0.4 1.27 0.016 0.050 m 0.6 0.024 s8 o (max.) so16.tbl tsh691 10/10
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